Preliminary Datasheet CR8CM-12B Thyristor R07DS0231EJ0100 Rev.1.00 Dec 20, 2010 Medium Power Use Features Non-Insulated Type Planar Passivation Type IT (AV) : 8 A VDRM : 600 V IGT : 15 mA Outline RENESAS Package code: PRSS0004AA-A (Package name: TO-220) 4 2, 4 3 1 12 1. 2. 3. 4. Cathode Anode Gate Anode 3 Applications Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage R07DS0231EJ0100 Rev.1.00 Dec 20, 2010 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 12 600 720 480 600 480 Unit V V V V V Page 1 of 6 CR8CM-12B Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Preliminary Symbol IT (RMS) IT (AV) Ratings 12.6 8 Unit A A ITSM 120 A I2 t 72 A2s PGM PG (AV) VFGM VRGM IFGM Tj Tstg — 5 0.5 6 10 2 – 40 to +150 – 40 to +150 2.0 W W V V A °C °C g Conditions Commercial frequency, sine half wave Note1 180° conduction, Tc = 124°C 50 Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 50 Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak reverse current Symbol IRRM Min. — Typ. — Max. 2.0/5.0 Unit mA Test conditions Tj = 125°C/150°C, VRRM applied Repetitive peak off-state current On-state voltage IDRM VTM — — — — 2.0/5.0 1.4 mA V Tj = 125°C/150°C, VDRM applied Gate trigger voltage VGT — — 1.0 V VGD 0.2/0.1 — — V IGT IH Rth (j-c) — — — — 15 — 15 — 2.0 mA mA °C/W Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Tc = 25°C, ITM = 25 A, instantaneous value Tj = 25°C, VD = 6 V, IT = 1 A Tj = 125°C/150°C, VD = 1/2 VDRM Tj = 25°C, VD = 6 V, IT = 1 A Tj = 25°C, VD = 12 V Junction to caseNote1 Note2 Notes: 1. Case temperature is measured at anode tab 1.5 mm away from the molded case. 2. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. R07DS0231EJ0100 Rev.1.00 Dec 20, 2010 Page 2 of 6 CR8CM-12B Preliminary Performance Curves Rated Surge On-State Current Maximum On-State Characteristics 103 200 Surge On-State Current (A) 102 101 1 2 3 4 × 100 (%) Gate Trigger Current (Tj = t°C) Gate Voltage (V) × 100 (%) Gate Trigger Voltage (Tj = t°C) Gate Trigger Voltage (Tj = 25°C) PGM = 5W PG(AV) = 0.5W IGT = 15mA VGD = 0.2V 101 IFGM = 2A 102 103 103 Typical Example 102 101 100 –40 0 40 80 160 120 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) Typical Example 102 –40 102 101 Gate Trigger Current vs. Junction Temperature 103 101 40 Gate Characteristics VGT = 1V 10-1 80 Conduction Time (Cycles at 50Hz) VFGM = 6V 100 120 On-State Voltage (V) 102 101 160 0 100 5 Gate Trigger Current (Tj = 25°C) 100 0 0 40 80 120 Junction Temperature (°C) R07DS0231EJ0100 Rev.1.00 Dec 20, 2010 160 Transient Thermal Impedance (°C/W) On-State Current (A) Tc = 125°C 102 101 100 10–1 –3 10 10–2 10–1 100 101 Time (s) Page 3 of 6 CR8CM-12B Preliminary Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 160 16 Case Temperature (°C) Average Power Dissipation (W) 20 180° 12 120° 90° θ = 30° 60° 8 θ 4 0 360° 2 4 6 8 10 12 14 Resistive, inductive loads 100 80 180° 60 120° 90° 40 60° θ = 30° 2 4 6 8 10 14 12 16 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 16 180° θ = 30° 12 120° 90° 60° 8 θ 4 θ 360° Case Temperature (°C) Average Power Dissipation (W) 360° 0 0 16 20 Resistive loads 140 0 2 4 6 8 10 12 80 180° 60 120° 90° 40 0 0 16 θ 100 60° 20 14 θ 360° 120 θ = 30° Resistive loads 0 2 4 6 8 10 12 14 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Allowable Case Temperature vs. Average On-State Current (Rectangular Wave) 20 16 140 90° 120° DC 60° 12 270° θ = 30° 8 θ 4 0 16 160 180° 360° 2 4 6 8 10 12 14 Average On-State Current (A) R07DS0231EJ0100 Rev.1.00 Dec 20, 2010 120 100 16 Resistive, inductive loads 80 θ 60 360° 40 20 Resistive, inductive loads 0 Case Temperature (°C) Average Power Dissipation (W) θ 120 20 Resistive, inductive loads 0 140 0 0 180° 270° 60° DC θ = 30° 90° 120° 2 4 6 8 10 12 14 16 Average On-State Current (A) Page 4 of 6 Breakover Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 –40 0 40 80 120 160 Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Tj = 125°C Typical Example 140 120 100 80 60 40 20 0 101 102 103 104 Repetitive Peak Reverse Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 –40 0 40 80 120 160 Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Tj = 150°C Typical Example 140 120 100 80 60 40 20 0 1 10 102 103 104 Rate of Rise of Off-State Voltage (V/μs) Rate of Rise of Off-State Voltage (V/μs) Holding Current vs. Junction Temperature Turn-Off Time vs. Junction Temperature 103 100 Typical Example Turn-Off Time (μs) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Breakover Voltage (dv/dt = vV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Junction Temperature (°C) Repetitive Peak Reverse Voltage (Tj = t°C) × 100 (%) Repetitive Peak Reverse Voltage (Tj = 25°C) Preliminary Breakover Voltage (dv/dt = vV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) CR8CM-12B 102 IT = 8A, –di/dt = 5A/µs, VD = 300V, dv/dt = 20V/µs VR = 50V 80 60 40 Typical Example 20 Distribution 101 –40 0 40 80 120 Junction Temperature (°C) R07DS0231EJ0100 Rev.1.00 Dec 20, 2010 160 0 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Page 5 of 6 CR8CM-12B Preliminary Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 103 Typical Example 102 101 -1 10 100 101 102 Gate Current Pulse Width (μs) Package Dimensions Package Name TO-220 JEITA Package Code SC-46 RENESAS Code PRSS0004AA-A Previous Code T220AB MASS[Typ.] 2.0g 10.5Max Unit: mm 4.5 φ3.6 3.8Max 12.5Min 16Max 7.0 3.2 1.3 1.0 0.8 0.5 2.54 2.6 4.5Max 2.54 Ordering Information Orderable Part Number CR8CM-12B#B00 Bag CR8CM-12B-A8#B00 Tube Note: Packing Quantity 100 pcs. 50 pcs. 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