DCR3030V42 Phase Control Thyristor DS5810-3 January 2014 (LN31245) FEATURES KEY PARAMETERS Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 4200V 3030A 40600A 1500V/µs 400A/µs * Higher dV/dt selections available High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V DCR3030V42 DCR3030V40 DCR3030V35 DCR3030V30 4200 4000 3500 3000 Conditions Tvj = -40°C to 125°C, IDRM = IRRM = 200mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR3030V42 Outline type code: V (See Package Details for further information) Fig. 1 Package outline Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/10 www.dynexsemi.com DCR3030V42 SEMICONDUCTOR CURRENT RATINGS Tcase = 60°C unless stated otherwise Symbol Parameter Test Conditions Max. Units 3030 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 4760 A Continuous (direct) on-state current - 4550 A IT Half wave resistive load SURGE RATINGS Symbol ITSM 2 It Parameter Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125°C 40.6 kA VR = 0 8.24 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Test Conditions Double side cooled DC - 0.00746 °C/W Single side cooled Anode DC - 0.0130 °C/W Cathode DC - 0.0178 °C/W Double side - 0.002 °C/W - 0.004 °C/W - 125 °C Clamping force 54kN (with mounting compound) Blocking VDRM / VRRM Single side Tvj Virtual junction temperature Tstg Storage temperature range -55 125 °C Fm Clamping force 48.0 59.0 kN 2/10 www.dynexsemi.com DCR3030V42 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C - 200 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open - 1500 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz - 200 A/µs Gate source 30V, 10, Non-repetitive - 400 A/µs tr < 0.5µs, Tj = 125°C VT(TO) rT tgd Threshold voltage – Low level 200A to 1700A at Tcase = 125°C - 0.82 V Threshold voltage – High level 1700A to 7000A at Tcase = 125°C - 0.98 V On-state slope resistance – Low level 200A to 1700A at Tcase = 125°C - 0.292 m On-state slope resistance – High level 1700A to 7000A at Tcase = 125°C - 0.198 m TBD TBD µs 250 500 µs 1600 3500 µC Delay time VD = 67% VDRM, gate source 30V, 10 tr = 0.5µs, Tj = 25°C tq Turn-off time Tj = 125°C, VR = 200V, dI/dt = 1A/µs, dVDR/dt = 20V/µs linear QS Stored charge Tj = 125°C, dI/dt – 1A/µs, VR pk =3000V, VRM= 1700V IL Latching current Tj = 25°C, VD = 5V - 3 A IH Holding current Tj = 25°C, RG-K = , ITM = 500A, IT = 5A - 300 mA 3/10 www.dynexsemi.com DCR3030V42 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units 1.5 V VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C VGD Gate non-trigger voltage At VDRM, Tcase = 125°C TBD V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 350 mA IGD Gate non-trigger current VDRM = 5V, Tcase = 25°C TBD mA CURVES Instantaneous on-state currentTI - (A) 7000 min 125°C max 125°C 25°C max 25°C 6000 5000 4000 3000 2000 1000 0 0.5 1.0 1.5 2.0 2.5 Instantaneous on-state voltage V T - (V) Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Where A = 0.866995 B = -0.042053 C = 0.000100 D = 0.014062 these values are valid for Tj = 125°C for IT 500A to 10000A 4/10 www.dynexsemi.com DCR3030V42 SEMICONDUCTOR 16 130 Mean power dissipation - (kW) o 14 Maximum case temperature, T case ( C ) 180 120 90 60 30 12 10 8 6 4 2 180 120 90 60 30 120 110 100 90 80 70 60 50 40 30 20 10 0 0 0 1000 2000 3000 4000 0 5000 1000 2000 3000 4000 5000 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation – sine wave Fig.4 Maximum permissible case temperature, double side cooled – sine wave 180 120 90 60 30 120 110 12 11 100 Mean power dissipation - (kW) o Maximum heatsink temperature, THeatsink - ( C) 130 90 80 70 60 50 40 30 20 10 9 8 7 6 5 4 d.c. 180 120 90 60 30 3 2 1 10 0 0 0 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave 0 1000 2000 3000 4000 5000 6000 Mean on-state current, IT(AV) - (A) Fig.6 On-state power dissipation – rectangular wave 5/10 www.dynexsemi.com DCR3030V42 130 130 d.c. 180 110 90 90 60 80 30 180 110 120 100 d.c. 120 o 120 Maximum heatsik temperature hTeatsink - ( C) T - (°C) Maximum permissible case temperature ,case SEMICONDUCTOR 70 60 50 40 30 20 10 0 120 100 90 90 60 80 30 70 60 50 40 30 20 10 0 0 2000 4000 6000 8000 0 Mean on-state current, IT(AV) - (A) 1000 2000 Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave Double side cooled 18 Anode side cooled Thermal Impedance , Zth(j-c) - ( °C/kW) 6000 Cathode side cooled 2 1.8299 3 3.4022 4 1.3044 0.0076807 0.0579454 0.4078613 1.2085 0.9032 1.6719 3.0101 7.4269 0.0075871 0.0536531 0.3144537 5.624 0.9478 2.0661 1.6884 13.0847 0.0078442 0.0645541 0.3894389 4.1447 Ri (°C/kW) Ti (s) Double Side Cooling Anode Side Cooling Cathode Sided Cooling 12 5000 1 0.9206 Ri (°C/kW) Ti (s) 14 4000 Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave 20 16 3000 Mean on-state current, IT(AV) - (A) Ri (°C/kW) Ti (s) Zth = [Ri x ( 1-exp. (t/ti))] [1] Rth(j-c) Conduction 10 Tables show the increments of thermal resistance R th(j-c) when the device operates at conduction angles other than d.c. 8 Double side cooling Zth (z) 6 ° 180 120 90 60 30 15 4 2 0 0.001 0.01 0.1 1 10 sine. 1.34 1.57 1.83 2.08 2.27 2.36 rect. 0.88 1.30 1.54 1.81 2.11 2.28 Anode Side Cooling Zth (z) ° 180 120 90 60 30 15 sine. 1.34 1.57 1.84 2.08 2.28 2.37 rect. 0.88 1.30 1.54 1.81 2.11 2.28 Cathode Sided Cooling Zth (z) ° 180 120 90 60 30 15 sine. 1.33 1.57 1.83 2.07 2.26 2.35 rect. 0.88 1.29 1.53 1.80 2.10 2.26 100 Time ( s ) Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW) 6/10 www.dynexsemi.com DCR3030V42 SEMICONDUCTOR Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current 600 18000 QSmax = 16000 3397.4*(di/dt)0.5061 Stored Charge, QS - (uC) Reverse recovery current, IRR - (A) 500 14000 QSmin = 1357.3*(di/dt) 12000 0.6271 IRRmax = 48.236*(di/dt)0.7553 400 10000 IRRmin 300 8000 6000 Conditions: Tj = 125oC VRpeak ~ 2500V VRM ~ 1700V snubber as appropriate to control reverse voltages. 4000 2000 29.853*(di/dt)0.8222 200 Conditions: o Tj=125 C VRpeak ~ 2500V VRM ~ 1700V snubber as approriate to control reverse voltages 100 0 0 5 10 15 20 25 Rate of decay of on-state current, di/dt - (A/us) 30 = 0 0 5 10 15 20 25 30 Rate of decay of on-state current, di/dt - (A/us) Fig. 12 Stored Charge Fig. 13 Reverse Recovery Current 7/10 www.dynexsemi.com DCR3030V42 SEMICONDUCTOR Fig14 Gate Characteristics 30 Lower Limit Upper Limit 5W 10W 20W 50W 100W 150W -40C Gate trigger voltage, VGT - (V) 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 Gate trigger current, IGT - (A) Fig. 15 Gate characteristics 8/10 www.dynexsemi.com DCR3030V42 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Device DCR1474SV18 DCR1475SV28 DCR1476SV42 DCR1478SV48 DCR1574SV28 DCR1575SV42 DCR1576SV52 DCR4060V22 DCR3780V28 DCR3030V42 DCR2720V52 DCR2290V65 DCR1910V85 Maximum Minimum Thickness Thickness (mm) (mm) 27.265 26.515 27.34 26.59 27.57 26.82 27.69 26.94 27.34 26.59 27.57 26.82 27.69 26.94 27.265 26.515 27.34 26.59 27.57 26.82 27.69 26.94 27.95 27.2 28.31 27.56 Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: V Fig.16 Package outline 9/10 www.dynexsemi.com DCR3030V42 SEMICONDUCTOR IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: Provisional Information: Preliminary Information: No Annotation: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Some initial development work has been performed. The datasheet represents a view of the end product based on very limited information. Certain details will change. The product design is complete and final characterisation for volume production is in progress.The datasheet represents the product as it is now understood but details may change. The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LIMITED Doddington Road, Lincoln, Lincolnshire, LN6 3LF United Kingdom. Phone: +44 (0) 1522 500500 Fax: +44 (0) 1522 500550 Web: http://www.dynexsemi.com Dynex Semiconductor Ltd. CUSTOMER SERVICE Phone: +44 (0) 1522 502753 / 502901 Fax: +44 (0) 1522 500020 e-mail: [email protected] Technical Documentation – Not for resale. 10/10 www.dynexsemi.com