SEMICONDUCTOR BC337 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=800mA. DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA). For Complementary with PNP type BC327. N E K G J D ) SYMBOL RATING H UNIT F Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Emitter Current IE -800 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55 150 L F 1 2 C CHARACTERISTIC 3 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M MAXIMUM RATING (Ta=25 DIM A B C D E F G H J K L M N 1. COLLECTOR 2. BASE Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC 3. EMITTER TO-92 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT - - 100 nA Collector Cut-off Current ICBO VCB=45V, IE=0 DC Current Gain (Note) hFE VCE=1V, IC=100mA 100 - 630 Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 0.7 V Base-Emitter Voltage VBE(ON) VCE=1V, IC=300mA - - 1.2 V Transition Frequency fT VCE=5V, IC=10mA, f=100MHz - 100 - MHz VCB=10V, f=1MHz, IE=0 - 16 - pF Cob Collector Output Capacitance Note : hFE Classification none:100 630, 2000. 2. 28 16:100 250, Revision No : 2 25:160 400, 40:250 630 1/2 BC337 2000. 2. 28 Revision No : 2 2/2