MAPRST1030-1KS
Avionics Pulsed Power Transistor
1000W, 1030 MHz, 10μs Pulse, 1% Duty
Rev. V1
Outline Drawing
Features
NPN silicon microwave power transistors
Common base configuration
Broadband Class C operation
High efficiency inter-digitized geometry
Diffused emitter ballasting resistors
Gold metallization system
Internal input and output impedance matching
Hermetic metal/ceramic package
RoHS Compliant
Absolute Maximum Ratings at 25°C
Symbol
Rating
Units
Collector-Emitter Voltage
Parameter
VCES
65
V
Emitter-Base Voltage
VEBO
3.0
V
Collector Current (Peak)
IC
250
A
Power Dissipation @ +25°C
PTOT
11.6
kW
Storage Temperature
TSTG
-65 to +200
°C
Junction Temperature
TJ
200
°C
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Frequency
Collector-Emitter Breakdown Voltage IC = 250mA
Symbol
Min
Max
Units
BVCES
65
-
V
ICES
-
30
mA
Collector-Emitter Leakage Current
VCE = 50V
Thermal Resistance
Vcc = 50V, Pout = 1000W
F = 1030 MHz
RTH(JC)
-
0.015
°C/W
Input Power
Vcc = 50V, Pout = 1000W
F = 1030 MHz
PIN
-
158
W
Power Gain
Vcc = 50V, Pout = 1000W
F = 1030 MHz
GP
8.0
-
dB
Collector Efficiency
Vcc = 50V, Pout = 1000W
F = 1030 MHz
C
45
-
%
Input Return Loss
Vcc = 50V, Pout = 1000W
F = 1030 MHz
RL
-
-10
dB
Load Mismatch Tolerance
Vcc = 50V, Pout = 1000W
F = 1030 MHz
VSWR-T
-
10:1
-
Load Mismatch Stability
Vcc = 50V, Pout = 1000W
F = 1030 MHz
VSWR-S
-
1.5:1
-
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
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MAPRST1030-1KS
Avionics Pulsed Power Transistor
1000W, 1030 MHz, 10μs Pulse, 1% Duty
Rev. V1
Typical RF Performance
Freq.
(MHz)
Pin
(W)
Pout
(W)
Gain
(dB)
Ic
(A)
Eff
(%)
RL
(dB)
1030
134
1000
8.74
39.5
50.8
-21.3
VSWR-S VSWR-T
(1.5:1)
(10:1)
S
P
P1dB Overdrive
Pout
Po
1180
0.74
Note: Po(dB) is the difference between Pout at 1dB overdrive and Pout at Pout = 1000W.
RF Power Transfer Curve
(Output Power Vs. Input Power)
Ouput Power (Watts)
1200
1100
1000
900
800
700
100
110
120
130
140
150
160
170
Input Power (Watts)
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAPRST1030-1KS
Avionics Pulsed Power Transistor
1000W, 1030 MHz, 10μs Pulse, 1% Duty
Rev. V1
RF Power Transfer Curve
(Gain & Collector Efficiency vs. Output Power)
9.5
60
Gain
8.5
55
Collector Efficiency
8.0
50
Eff (%)
Gain (dB)
9.0
45
7.5
700
800
900
1000
1100
40
1200
Pout (Watts)
RF Test Fixture Impedance
F (MHz)
ZIF (Ω)
ZOF (Ω)
1030
1.8 - j2.2
0.5 - j1.0
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAPRST1030-1KS
Avionics Pulsed Power Transistor
1000W, 1030 MHz, 10μs Pulse, 1% Duty
Rev. V1
Test Fixture Circuit Dimensions
Test Fixture Assembly
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAPRST1030-1KS
Avionics Pulsed Power Transistor
1000W, 1030 MHz, 10μs Pulse, 1% Duty
Rev. V1
M/A-COM Technology Solutions Inc. All rights reserved.
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5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support