PHILIPS BGD812 Catv amplifier module Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D252
BGD812
CATV amplifier module
Preliminary specification
Supersedes data of 1999 Dec 01
2000 Apr 26
Philips Semiconductors
Preliminary specification
CATV amplifier module
BGD812
FEATURES
PINNING - SOT115J
• Excellent linearity
PIN
• Extremely low noise
DESCRIPTION
1
• Excellent return loss properties
input
2 and 3
• Silicon nitride passivation
common
5
• Rugged construction
+VB
7 and 8
• Gold metallization ensures excellent reliability.
common
9
output
APPLICATIONS
• CATV systems operating in the 40 to 870 MHz
frequency range.
handbook, halfpage
1
2
3
5
7
8
9
DESCRIPTION
Side view
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
Gp
power gain
Itot
total current consumption (DC)
f = 45 MHz
MIN.
18.2
MAX.
18.8
UNIT
dB
f = 870 MHz
19
20
dB
VB = 24 V
380
410
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VB
supply voltage
−
30
V
Vi
RF input voltage
−
70
dBmV
Tstg
storage temperature
−40
+100
°C
Tmb
operating mounting base temperature
−20
+100
°C
2000 Apr 26
2
Philips Semiconductors
Preliminary specification
CATV amplifier module
BGD812
CHARACTERISTICS
Bandwidth 40 to 870 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω
SYMBOL
Gp
PARAMETER
power gain
CONDITIONS
MIN.
TYP.
MAX.
UNIT
f = 45 MHz
18.2
−
18.8
dB
f = 870 MHz
19
−
20
dB
dB
SL
slope straight line
f = 45 to 870 MHz; note 1
0.4
0.9
1.4
FL
flatness straight line
f = 45 to 100 MHz
−
−
±0.25
dB
f = 100 to 800 MHz
−
−
±0.5
dB
f = 800 to 870 MHz
−0.3
−
+0.1
dB
s11
s22
input return losses
output return losses
f = 45 to 80 MHz
25
−
−
dB
f = 80 to 160 MHz
23
−
−
dB
f = 160 to 320 MHz
20
−
−
dB
f = 320 to 550 MHz
18
−
−
dB
f = 550 to 650 MHz
18
−
−
dB
f = 650 to 750 MHz
17
−
−
dB
f = 750 to 870 MHz
17
−
−
dB
f = 870 to 914 MHz
14
−
−
dB
f = 45 to 80 MHz
23
−
−
dB
f = 80 to 160 MHz
22
−
−
dB
f = 160 to 320 MHz
18
−
−
dB
f = 320 to 550 MHz
18
−
−
dB
f = 550 to 650 MHz
17
−
−
dB
f = 650 to 750 MHz
16
−
−
dB
f = 750 to 870 MHz
16
−
−
dB
f = 870 to 914 MHz
14
−
−
dB
s21
phase response
f = 50 MHz
−45
−
+45
deg
CTB
composite triple beat
79 chs flat; Vo = 44 dBmV; fm = 547.25 MHz
−
−
−67
dB
112 chs flat; Vo = 44 dBmV; fm = 745.25 MHz
−
−
−62
dB
132 chs flat; Vo = 44 dBmV; fm = 859.25 MHz
−
−
−58
dB
112 chs; fm = 547.25 MHz;
Vo = 50.2 dBmV at 745 MHz; note 2
−
−
−56.5
dB
79 chs; fm = 331.25 MHz;
Vo = 47.3 dBmV at 547 MHz; note 3
−
−
−66
dB
Xmod
2000 Apr 26
cross modulation
79 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
−
−
−68
dB
112 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
−
−
−64
dB
132 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
−
−
−62
dB
112 chs; fm = 745.25 MHz;
Vo = 50.2 dBmV at 745 MHz; note 2
−
−
−59
dB
79 chs; fm = 331.25 MHz;
Vo = 47.3 dBmV at 547 MHz; note 3
−
−
−67
dB
3
Philips Semiconductors
Preliminary specification
CATV amplifier module
SYMBOL
CSO
BGD812
PARAMETER
composite second
order distortion
CONDITIONS
MIN.
TYP.
MAX.
UNIT
79 chs flat; Vo = 44 dBmV; fm = 548.5 MHz
−
−
−67
dB
112 chs flat; Vo = 44 dBmV; fm = 746.5 MHz
−
−
−60
dB
132 chs flat; Vo = 44 dBmV; fm = 860.5 MHz
−
−
−58
dB
112 chs; fm = 210 MHz;
Vo = 50.2 dBmV at 745 MHz; note 2
−
−
−57
dB
79 chs; fm = 210 MHz;
Vo = 47.3 dBmV at 547 MHz; note 3
−
−
−65
dB
d2
second order distortion
note 4
−
−
−73
dB
Vo
output voltage
dim = −60 dB; note 5
64.5
−
−
dBmV
CTB compression = 1 dB; 132 chs flat;
f = 859.25 MHz
48
−
−
dBmV
CSO compression = 1 dB; 132 chs flat;
f = 860.5 MHz
51
−
−
dBmV
f = 50 MHz
−
−
5.5
dB
f = 550 MHz
−
−
5.5
dB
f = 750 MHz
−
−
6.5
dB
f = 870 MHz
−
−
7.5
dB
note 6
380
395
410
mA
F
Itot
noise figure
total current
consumption (DC)
Notes
1. Slope straight line is defined as gain at 870 MHz against gain at 45 MHz.
2. Tilt = 10.2 dB (55 to 745 MHz).
3. Tilt = 7.3 dB (55 to 547 MHz).
4. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 805.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 860.5 MHz.
5. Measured according to DIN45004B:
fp = 851.25 MHz; Vp = Vo;
fq = 858.25 MHz; Vq = Vo −6 dB;
fr = 860.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 849.25 MHz.
6. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V.
2000 Apr 26
4
Philips Semiconductors
Preliminary specification
CATV amplifier module
BGD812
MLD351
−50
handbook, halfpage
(1)
CTB
(dB)
MLD352
−40
52
handbook, halfpage
(1)
Xmod
Vo
(dBmV)
52
Vo
(dBmV)
(dB)
−60
48
−50
48
−70
44
−60
44
(2)
(2)
(3)
(4)
−80
−90
200
0
400
600
(3)
−70
40
40
(4)
−80
36
1000
800
f (MHz)
200
0
400
600
36
1000
800
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
(1) Vo.
(2) Typ. +3 σ.
Fig.2
(3) Typ.
(4) Typ. −3 σ.
Composite triple beat as a function of
frequency under tilted conditions.
MLD353
−50
handbook, halfpage
(1)
CSO
(dB)
Fig.3
52
Vo
(dBmV)
−60
48
(2)
−70
44
(3)
−80
40
(4)
−90
200
0
400
600
36
1000
800
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
Fig.4
(3) Typ.
(4) Typ. −3 σ.
Composite second order distortion as a
function of frequency under tilted
conditions.
2000 Apr 26
5
(3) Typ.
(4) Typ. −3 σ.
Cross modulation as a function of frequency
under tilted conditions.
Philips Semiconductors
Preliminary specification
CATV amplifier module
BGD812
MLD354
−40
handbook, halfpage
(1)
CTB
(dB)
−60
(2)
(3)
(4)
200
0
400
600
(1)
Xmod
48
−50
44
−60
52
Vo
(dBmV)
(dB)
48
(2)
44
(3)
(4)
40
−70
36
1000
800
f (MHz)
−80
−70
−80
handbook, halfpage
Vo
(dBmV)
−50
MLD355
−40
52
40
200
0
400
600
36
1000
800
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
(1) Vo.
(2) Typ. +3 σ.
Fig.5
(3) Typ.
(4) Typ. −3 σ.
Composite triple beat as a function of
frequency under tilted conditions.
MLD356
−50
handbook, halfpage
(1)
CSO
(dB)
Fig.6
52
Vo
(dBmV)
−60
48
(2)
−70
(3)
(4)
−80
−90
200
0
400
600
44
40
36
1000
800
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
Fig.7
(3) Typ.
(4) Typ. −3 σ.
Composite second order distortion as a
function of frequency under tilted
conditions.
2000 Apr 26
6
(3) Typ.
(4) Typ. −3 σ.
Cross modulation as a function of frequency
under tilted conditions.
Philips Semiconductors
Preliminary specification
CATV amplifier module
BGD812
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A2
1
2
3
5
7
8
9
A
L
F
S
W
c
e
b
w M
e1
d
U2
q2
Q
B
y M B
q1
y M B
y M B
p
U1
q
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A2
A
max. max.
mm 20.8
9.1
OUTLINE
VERSION
b
c
d
D
E
max. max. max.
e
e1
F
0.51
0.25 27.2 2.54 13.75 2.54 5.08 12.7
0.38
L
min.
p
Q
max.
8.8
4.15
3.85
2.4
REFERENCES
IEC
JEDEC
EIAJ
q1
q2
38.1 25.4 10.2
S
U1
U2
max.
4.2 44.75
8
EUROPEAN
PROJECTION
W
w
6-32 0.25
UNC
y
Z
max.
0.1
3.8
ISSUE DATE
99-02-06
SOT115J
2000 Apr 26
q
7
Philips Semiconductors
Preliminary specification
CATV amplifier module
BGD812
DATA SHEET STATUS
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS (1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Apr 26
8
Philips Semiconductors
Preliminary specification
CATV amplifier module
BGD812
NOTES
2000 Apr 26
9
Philips Semiconductors
Preliminary specification
CATV amplifier module
BGD812
NOTES
2000 Apr 26
10
Philips Semiconductors
Preliminary specification
CATV amplifier module
BGD812
NOTES
2000 Apr 26
11
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SCA 69
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603518/02/pp12
Date of release: 2000
Apr 26
Document order number:
9397 750 07001