FDP6670AS/FDB6670AS tm 30V N-Channel PowerTrench® SyncFET™ General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDP6670AS/FDB6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6670A/FDB6670A in parallel with a Schottky diode. • 31 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 10.5 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (28nC typical) • High performance trench technology for extremely low RDS(ON) and fast switching • High power and current handling capability D D G G D G S TO-220 TO-263AB FDP Series S Absolute Maximum Ratings Symbol FDB Series S TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS ID Gate-Source Voltage Drain Current – Continuous ±20 V A PD Total Power Dissipation @ TC = 25°C 62 – Pulsed (Note 1) Derate above 25°C TJ, TSTG TL Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 150 62.5 W 0.5 W/°C –55 to +150 °C 275 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case 2.1 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB6670AS FDB6670AS 13’’ 24mm 800 units FDP6670AS FDP6670AS Tube n/a 45 ©2008 Fairchild Semiconductor Corporation FDP6670AS/FDB6670AS Rev A2 (X) FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™ May 2008 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA V On Characteristics ID = 1mA 30 ID = 10mA, Referenced to 25°C V mV/°C 27 (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, 1.7 –4 3 ID = 10mA, Referenced to 25°C ID = 1mA ID(on) On–State Drain Current VGS = 10 V, VDS = 10 V gFS Forward Transconductance VDS = 10 V, ID = 31 A 1 VGS = 10 V, ID = 31 A VGS = 4.5 V, ID = 26.5 A VGS=10 V, ID =31 A, TJ=125°C 6.8 8.4 9 8.5 10.5 12.5 mV/°C 60 mΩ A 84 S 1570 pF 440 pF 160 pF 1.9 Ω Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics VDS = 15 V, V GS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz (Note 2) td(on) Turn–On Delay Time 9 18 ns tr Turn–On Rise Time 12 22 ns td(off) Turn–Off Delay Time tf Turn–Off Fall Time VDS = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 27 43 ns 19 34 ns td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time 25 40 ns tf Turn–Off Fall Time 13 23 ns Qg Total Gate Charge, Vgs=10V 28 39 nC Qgs Gate–Source Charge, Vgs=5V 15 21 nC Qgd Gate–Drain Charge Qgd Gate–Drain Charge VDS = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω VDS = 15 V, ID = 31 A, 16 29 ns 16 29 ns 5 nC 5 nC Drain–Source Diode Characteristics VSD trr Qrr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 3.5 A, diF/dt = 300 A/µs (Note 1) (Note 1) (Note 2) 0.5 0.6 20 14 0.7 0.9 V nS nC Notes: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2. See “SyncFET Schottky body diode characteristics” below. FDP6670AS/FDB6670AS Rev A2 (X) FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™ Electrical Characteristics VGS = 10V 6.0V 120 1.8 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 150 5.0V 4.0V 90 3.5V 60 3.0V 30 0 0 1 2 3 VDS, DRAIN-SOURCE VOLTAGE (V) 1.6 1.4 4.5V 5.0V 6.0V 10V 1 0.8 4 0 30 60 90 ID, DRAIN CURRENT (A) 120 150 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.022 1.6 ID = 31A VGS = 10V 1.4 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.0V 1.2 Figure 1. On-Region Characteristics. 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 ID = 15.5A 0.017 0.007 2 10 IS, REVERSE DRAIN CURRENT (A) 60 40 o TA = 125 C -55oC 25oC 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. VDS = 5V 0 o TA = 25 C 0.002 150 80 20 TA = 125oC 0.012 Figure 3. On-Resistance Variation with Temperature. ID, DRAIN CURRENT (A) VGS = 3.5V VGS = 0V 1 o TA = 125 C 25oC 0.1 -55oC 0.01 4 0 0.1 0.2 0.3 0.4 0.5 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.6 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP6670AS/FDB6670AS Rev A2 (X) FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics 2400 ID = 31A f = 1MHz VGS = 0 V 8 VDS = 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 15V 4 2 1800 Ciss 1200 Crss 0 0 6 12 18 Qg, GATE CHARGE (nC) 24 0 30 0 Figure 7. Gate Charge Characteristics. 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics. 1000 RDS(ON) LIMIT 100 1s P(pk), PEAK TRANSIENT POWER (W) 1000 100µs 10ms 100m 10s 10 DC VGS = 10V SINGLE PULSE o RθJC = 2.1 C/W o TA = 25 C 1 SINGLE PULSE RθJC = 2.1°C/W TA = 25°C 800 600 400 200 0 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0.1 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) Coss 600 1 1 10 t1, TIME (sec) 1000 Figure 10. Single Pulse Maximum Power Dissipation. D = 0.5 RθJC(t) = r(t) * RθJC RθJC = 2.1 °C/W 0.2 0.1 100 0.1 0.05 P(pk 0.02 0.01 t1 t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 TJ - Tc = P * RθJC(t) Duty Cycle, D = t1 / t2 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDP6670AS/FDB6670AS Rev A2 (X) FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 CURRENT: 0.8A/div IDSS, REVERSE LEAKAGE CURRENT (A) Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDP6670AS. 0.01 TA = 125oC 0.001 TA = 100oC 0.0001 TA = 25oC 0.00001 0 TIME: 12.5ns/div 10 20 VDS, REVERSE VOLTAGE (V) 30 Figure 14. SyncFET diode reverse leakage versus drain-source voltage and temperature. Figure 12. FDP6670AS SyncFET body diode reverse recovery characteristic. CURRENT: 0.8A/div For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDP6670A). TIME: 12.5ns/div Figure 13. Non-SyncFET (FDP6670A) body diode reverse recovery characteristic. FDP6670AS/FDB6670AS Rev A2 (X) FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics (continued) 2400 ID = 31A f = 1MHz VGS = 0 V 8 VDS = 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 15V 4 2 1800 Ciss 1200 Crss 0 0 6 12 18 Qg, GATE CHARGE (nC) 24 0 30 0 Figure 7. Gate Charge Characteristics. 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics. 1000 RDS(ON) LIMIT 100 1s P(pk), PEAK TRANSIENT POWER (W) 1000 100µs 10ms 100m 10s 10 DC VGS = 10V SINGLE PULSE o RθJC = 2.1 C/W o TA = 25 C 1 SINGLE PULSE RθJC = 2.1°C/W TA = 25°C 800 600 400 200 0 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0.1 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) Coss 600 1 10 t1, TIME (sec) 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJC(t) = r(t) * RθJC RθJC = 2.1 °C/W 0.2 0.1 0.1 0.05 P(pk 0.02 0.01 t1 t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 TJ - Tc = P * RθJC(t) Duty Cycle, D = t1 / t2 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDP6670AS/FDB6670AS Rev A2 (X) FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics (continued) The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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