SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS FMMT5088 FMMT5089 ISSUE 2 - SEPTEMBER 1995 PARTMARKING DETAIL FMMT5088 - 1Q FMMT5089 - 1R E C COMPLEMENTARY TYPES FMMT5088 - FMMT5087 FMMT5089 - None Available B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO FMMT5088 FMMT5089 35 30 UNIT V Collector-Emitter Voltage VCEO 30 25 V Emitter-Base Voltage VEBO 4.5 4.5 V Continuous Collector Current IC 50 50 mA Power Dissipation at Tamb=25°C Ptot 330 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). FMMT5088 FMMT5089 PARAMETER SYMBOL MIN. MAX. MIN. Collector-Base Breakdown Voltage V(BR)CBO 35 25 V IC=1mA, IB=0 Collector-Emitter Breakdown Voltage V(BR)CEO 30 30 V IC=100µ A,IE=0* Collector- Base Cut-Off Current ICBO 50 50 nA nA VCB=20V, IE=0 VCB=15V, IE=0 Emitter-Base Current IEBO 50 100 nA nA VEB(off)=3V, IC=0 VEB(off)=4.5V, IC=0 Emitter Saturation Voltages VCE(sat) 0.5 0.5 V VBE(sat) 0.8 0.8 V Static Forward Current Transfer Ratio hFE 300 350 300 Transition Frequency fT 50 900 400 450 400 MAX. UNIT 1200 50 CONDITIONS. IC=10mA, IB=1mA IC=100µ A, VCE=5V IC=1mA, VCE=5V IC=10mA, VCE=5V MHz IC=500µ A, VCE=5V f=20MHz Output Capacitance Cobo 4 4 pF VCB=5V, f=1MHz, IE=0 Emitter-base Capacitance Cebo 10 10 pF VBE=0.5V, f=1MHz, IC=0 Noise Figure N 3 2 dB IC=200mA, VCE=5V, Rg=10KΩ , f=10Hz to 15KHz Small Signal Current hfe Transfer Ratio 350 1400 450 1800 IC=1mA, VCE=5V f=1KHz ++ *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% ++ Periodic Sample test Only Spice parameter data is available upon request for this device Page Number