ON NTB52N10 N-channel enhancement−mode d2pak Datasheet

NTB52N10
Power MOSFET
52 Amps, 100 Volts
N−Channel Enhancement−Mode D2PAK
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Features
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
•
•
•
•
Fast Recovery Diode
Avalanche Energy Specified
IDSS and RDS(on) Specified at Elevated Temperature
Mounting Information Provided for the D2PAK Package
Pb−Free Packages are Available
VDSS
RDS(ON) TYP
ID MAX
100 V
30 mW @ 10 V
52 A
N−Channel
D
Typical Applications
• PWM Motor Controls
• Power Supplies
• Converters
G
S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
100
Vdc
Drain−to−Source Voltage (RGS = 1.0 MW)
VDGR
100
Vdc
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
VGS
VGSM
"20
"40
ID
ID
52
40
156
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc,
IL(pk) = 40 A, L = 1.0 mH, RG = 25 W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8in from case for 10 seconds
IDM
178
1.43
2.0
W
W/°C
W
TJ, Tstg
−55 to
+150
°C
EAS
800
mJ
°C/W
TL
0.7
62.5
50
August, 2005 − Rev. 3
3
NTB52N10
A
Y
WW
G
°C
260
1
1
Gate
2
Drain
3
Source
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping †
NTB52N10
D2PAK
50 Units / Rail
NTB52N10G
D2PAK
50 Units / Rail
Device
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu. Area 0.412 in2).
© Semiconductor Components Industries, LLC, 2005
NTB
52N10G
AYWW
2
D2PAK
CASE 418B
STYLE 2
PD
RqJC
RqJA
RqJA
4
1
Adc
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 2)
4
Drain
Vdc
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Pulsed (Note 1)
MARKING DIAGRAM
& PIN ASSIGNMENT
(Pb−Free)
NTB52N10T4
NTB52N10T4G
D2PAK
800 / Tape & Reel
D2PAK
(Pb−Free)
800 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTB52N10/D
NTB52N10
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
100
−
−
160
−
−
−
−
−
−
5.0
50
−
−
± 100
2.0
−
2.92
−8.75
4.0
−
−
−
0.023
0.050
0.030
0.060
−
1.25
1.45
gFS
−
31
−
mhos
Ciss
−
2250
3150
pF
Coss
−
620
860
Crss
−
135
265
td(on)
−
15
25
tr
−
95
180
td(off)
−
74
150
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 100 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = 100 Vdc, TJ = 125°C)
IDSS
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
mAdc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−State Resistance
(VGS = 10 Vdc, ID = 26 Adc)
(VGS = 10 Vdc, ID = 26 Adc, TJ = 125°C)
RDS(on)
Drain−to−Source On−Voltage
(VGS = 10 Vdc, ID = 52 Adc)
VDS(on)
Forward Transconductance (VDS = 26 Vdc, ID = 10 Adc)
Vdc
mV/°C
W
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Notes 3 & 4)
Turn−On Delay Time
(VDD = 80 Vdc, ID = 52 Adc,
VGS = 10 Vdc,
RG = 9.1 W)
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
(VDS = 80 Vdc, ID = 52 Adc,
VGS = 10 Vdc)
Gate−to−Source Charge
Gate−to−Drain Charge
ns
tf
−
100
190
Qtot
−
72
135
Qgs
−
13
−
Qgd
−
37
−
VSD
−
−
1.06
0.95
1.5
−
Vdc
trr
−
148
−
ns
ta
−
106
−
tb
−
42
−
QRR
−
0.66
−
nC
BODY−DRAIN DIODE RATINGS (Note 3)
Diode Forward On−Voltage
(IS = 52 Adc, VGS = 0 Vdc)
(IS = 37 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 52 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.
4. Switching characteristics are independent of operating junction temperature.
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2
mC
NTB52N10
VGS = 10 V
90
7V
100
TJ = 25°C
9V
80
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
100
6V
8V
70
60
5.5 V
50
40
5V
30
20
4.5 V
10
0
1
2
3
4
5
6
7
8
9
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
80
70
60
50
40
TJ = 100°C
30
TJ = 25°C
20
TJ = −55°C
10
4V
0
VDS ≥ 10 V
90
0
10
2
3
4
5
6
7
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.05
VGS = 10 V
TJ = 100°C
0.04
0.03
TJ = 25°C
0.02
TJ = −55°C
0.01
0
10
20
60
70
80
30
40
50
ID, DRAIN CURRENT (AMPS)
90
100
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.05
TJ = 25°C
0.04
0.03
VGS = 10 V
0.02
VGS = 15 V
0.01
0
0
Figure 3. On−Resistance versus Drain Current
and Temperature
10
2.5
10,000
30 40 50
60 70 80
ID, DRAIN CURRENT (AMPS)
90 100
VGS = 0 V
2.25
2.0
20
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
TJ = 150°C
ID = 26 A
VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
8
1.75
1.5
1.25
1.0
0.75
1000
100
TJ = 100°C
0.5
0.25
0
−60
−30
0
30
60
90
120
TJ, JUNCTION TEMPERATURE (°C)
10
150
30
Figure 5. On−Resistance Variation with
Temperature
60
70
100
40
50
80
90
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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NTB52N10
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals (Dt)
are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because drain−gate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (IG(AV)) can be made from a
rudimentary analysis of the drive circuit so that
t = Q/IG(AV)
The capacitance (Ciss) is read from the capacitance curve at
a voltage corresponding to the off−state condition when
calculating td(on) and is read at a voltage corresponding to the
on−state when calculating td(off).
At high switching speeds, parasitic circuit elements
complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate drive
current. The voltage is determined by Ldi/dt, but since di/dt
is a function of drain current, the mathematical solution is
complex. The MOSFET output capacitance also
complicates the mathematics. And finally, MOSFETs have
finite internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance
is difficult to measure and, consequently, is not specified.
The resistive switching time variation versus gate
resistance (Figure 9) shows how typical switching
performance is affected by the parasitic circuit elements. If
the parasitics were not present, the slope of the curves would
maintain a value of unity regardless of the switching speed.
The circuit used to obtain the data is constructed to minimize
common inductance in the drain and gate circuit loops and
is believed readily achievable with board mounted
components. Most power electronic loads are inductive; the
data in the figure is taken with a resistive load, which
approximates an optimally snubbed inductive load. Power
MOSFETs may be safely operated into an inductive load;
however, snubbing reduces switching losses.
During the rise and fall time interval when switching a
resistive load, VGS remains virtually constant at a level
known as the plateau voltage, VSGP. Therefore, rise and fall
times may be approximated by the following:
tr = Q2 x RG/(VGG − VGSP)
tf = Q2 x RG/VGSP
where
VGG = the gate drive voltage, which varies from zero to VGG
RG = the gate drive resistance
and Q2 and VGSP are read from the gate charge curve.
During the turn−on and turn−off delay times, gate current is
not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
td(on) = RG Ciss In [VGG/(VGG − VGSP)]
td(off) = RG Ciss In (VGG/VGSP)
6000
VDS = 0 V VGS = 0 V
C, CAPACITANCE (pF)
5000
TJ = 25°C
Ciss
4000
3000
Crss
Ciss
2000
1000
Coss
Crss
0
−10
−5
VGS
0
5
10
15
20
VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
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25
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
18
QT
16
80
VDS
14
12
60
10
8
Q1
Q2
VGS
40
6
20
4
ID = 52 A
TJ = 25°C
2
0
0
10
20
30
40
50
QG, TOTAL GATE CHARGE (nC)
60
0
70
1000
td(off)
VDD = 80 V
ID = 52 A
VGS = 10 V
tf
tr
100
t, TIME (ns)
100
20
V DS,DRAIN−TO−SOURCE VOLTAGE (VOLTS)
NTB52N10
td(on)
10
1
1
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
10
RG, GATE RESISTANCE (OHMS)
100
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
IS , SOURCE CURRENT (AMPS)
60
50
VGS = 0 V
TJ = 25°C
40
30
20
10
0
0.45
0.55
0.65
0.75
0.85
0.25 0.35
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.95
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance −
General Data and Its Use.”
Switching between the off−state and the on−state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 ms. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) − TC)/(RqJC).
A Power MOSFET designated E−FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E−FETs can withstand the stress of
drain−to−source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry custom.
The energy rating must be derated for temperature as shown
in the accompanying graph (Figure 12). Maximum energy at
currents below rated continuous ID can safely be assumed to
equal the values indicated.
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NTB52N10
I D, DRAIN CURRENT (AMPS)
1000
VGS = 20 V
SINGLE PULSE
TC = 25°C
10 ms
100
100 ms
10
1 ms
10 ms
dc
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.1
1
10
100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
EAS , SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
SAFE OPERATING AREA
800
700
ID = 40 A
600
500
400
300
200
100
0
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
25
150
50
75
100
125
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
0.01
0.00001
0.0001
0.001
0.01
t, TIME (ms)
0.1
Figure 13. Thermal Response
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
Figure 14. Diode Reverse Recovery Waveform
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1
10
NTB52N10
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE J
C
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
4
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
A
1
2
S
3
−T−
SEATING
PLANE
K
W
J
G
D 3 PL
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
H
M
T B
M
N
R
M
STYLE 2:
PIN 1.
2.
3.
4.
P
U
L
L
M
L
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
5.08
0.20
3.05
0.12
17.02
0.67
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
NTB52N10
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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