Comset BUX41N High current, high speed, high power transistor Datasheet

NPN BUX41N
HIGH CURRENT, HIGH SPEED,
HIGH POWER TRANSISTOR
The BUX41N is silicon multiepitaxial planar NPN transistor in Jedec TO-3.
They are intended for use in switching and linear applications in military and industrial
equipment.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCBO
VCEX
VEBO
IC
ICM
IB
Pt
TJ
TStg
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
IB = 0
IE = 0
VBE = -1.5 V
IC = 0
tp = 10ms
@ TC = 25°
Value
Unit
160
220
220
7
18
25
3.6
120
200
-65 to +200
V
V
V
V
A
A
A
Watts
°C
°C
Value
Unit
1.46
°C/W
THERMAL CHARACTERISTICS
Symbol
RthJC
Ratings
Thermal Resistance, Junction to Case
COMSET SEMICONDUCTORS
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NPN BUX41N
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VEBO
ICEO
Collector-Emitter Sustaining
Voltage (*)
Emitter-Base Voltage
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE
DC Current Gain (*)
VCEO(SUS)
VCE(SAT)
VBE(SAT)
IS/B
ES/B
fT
ton
IC= 200 mA
IC= 0 A, IE= 50 mA
VCE= 130 V, IB= 0 A
VCE= 220 V, VBE= -1.5 V
VCE= 220 V, VBE= -1.5 V
Tcase = 125°C
VEB= 5.0 V, IC= 0 A
IC= 8 A, VCE= 4.0 V
IC= 12 A, VCE= 4.0 V
IC= 8 A, IB= 0.8 A
IC= 12 A, IB= 1.5 A
Collector-Emitter saturation
Voltage (*)
Base-Emitter saturation Voltage
IC= 12 A , IB= 1.5 A
(*)
VCE= 30 V, ts = 1s
Second breakdown collector
current
VCE= 100 V, ts = 1s
Vclamp= 160 V
Clamped ES/B Collector current
L= 500 µH
VCE= 15 V, IC= 1 A
Transition frequency
f= 10 MHz
IC= 12 A, IB= 1.5 A
Turn-on time
VCC= 30 V
ts
Storage time
tf
File time
IC= 12 A, VCC= 30 V
IB1 = -IB2 = 1.5 A
Min
Typ
Max Unit
160
-
-
V
7
-
-
1
1
V
mA
-
-
5
15
8
-
0.5
0.75
1
45
1.2
1.6
-
1.5
2
4
0.27
-
-
A
12
-
-
A
8
-
-
MHz
-
0.35
1.3
-
0.85
1.5
-
0.14
0.8
mA
mA
-
V
µs
(*) Pulse Duration = 300 µs, Duty Cycle <= 2%
01/10/2012
COMSET SEMICONDUCTORS
2/3
NPN BUX41N
MECHANICAL DATA CASE TO-3
DIMENSIONS
(mm)
A
B
C
D
F
G
N
P
R
U
V
min
max
11
0.97
1.5
8.32
19
10.70
16.50
25
4
38.50
30
13.10
1.15
1.65
8.92
20
11.1
17.20
26
4.09
39.30
30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
01/10/2012
[email protected]
COMSET SEMICONDUCTORS
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