Renesas HAT2299WP Silicon n channel power mos fet power switching Datasheet

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HAT2299WP
Silicon N Channel Power MOS FET
Power Switching
REJ03G1528-0100
Rev.1.00
Mar 20, 2007
Features
• Low on-resistance
• Low drive current
• High density mounting
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 6 7 8
D D D D
5 6 7 8
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
4
G
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Rev.1.00 Mar 20, 2007 page 1 of 6
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
Ratings
150
±30
14
28
14
Unit
V
V
A
A
A
IDR (pulse)Note1
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
28
14
14.7
25
5
150
–55 to +150
A
A
mJ
W
°C/W
°C
°C
HAT2299WP
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 4. Pulse test
Rev.1.00 Mar 20, 2007 page 2 of 6
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Min
150
—
—
3.0
6
—
Typ
—
—
—
—
10
0.097
Max
—
1
±0.1
4.0
—
0.11
Unit
V
µA
µA
V
S
Ω
Test conditions
ID = 10 mA, VGS = 0
VDS = 150 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 7 A, VDS = 10 V Note4
ID = 7 A, VGS = 10 VNote4
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
710
160
13
26
31
53
7
15
4.3
5.6
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS = 25 V
VGS = 0
f = 1 MHz
VDF
trr
—
—
0.85
95
1.4
—
V
ns
IF = 14 A, VGS = 0 Note4
ID = 7 A
VGS = 10 V
RL = 10.7 Ω
Rg = 10 Ω
VDD = 120 V
VGS = 10 V
ID = 14 A
IF = 14 A, VGS = 0
diF/dt = 100 A/µs
HAT2299WP
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
100
Drain Current ID (A)
30
30
20
10
s
DC
(Tc Op
= 2 era
5 ° tion
C)
3
1
0.3
10
0 µ µs
s
PW = 10 ms
(1shot)
0.1
0.03 Operation in this
is limited by
0.01 area
R
DS(on)
0
20
Drain Current ID (A)
10
1m
10
0.003
16
50
100
150
Ta = 25°C
0.001
1
200
3
100
30
10
300
1000
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
20
10 V
7V
VDS = 10 V
Pulse Test
Pulse Test
8V
6.5 V
12
5.9 V
8
VGS = 5.4 V
4
Drain Current ID (A)
Channel Dissipation Pch (W)
40
16
12
Tc = 75°C
8
25°C
4
−25°C
2
4
6
8
0
10
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
8
Pulse Test
6
4
ID = 28 A
2
0
14 A
4
8
12
16
7A
20
Gate to Source Voltage VGS (V)
Rev.1.00 Mar 20, 2007 page 3 of 6
Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source Saturation Voltage
VDS(on) (V)
0
1
VGS = 10 V
0.5
0.2
0.1
0.05
0.02
Pulse Test
0.01
1
3
10
30
100
300
Drain Current ID (A)
1000
Pulse Test
0.4
ID = 28 A
0.3
14 A
0.2
7A
0.1
0
−25
0
25
50
75
100 125 150
30
Tc = −25°C
10
25°C
75°C
3
1
0.3
0.1
0.1
VDS = 10 V
Pulse Test
0.3
1
3
10
30
Case Temperature Tc (°C)
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics
VGS = 0
f = 1 MHz
3000
1000
Ciss
300
100
Coss
30
10
Crss
3
1
0
50
100
100
240
16
ID = 14 A
VGS
VDD = 30 V
60 V
120 V
180
12
VDS
120
8
60
4
VDD = 120 V
60 V
30 V
0
150
4
8
12
0
20
16
Drain to Source Voltage VDS (V)
Gate Charge Qg (nC)
Switching Characteristics
Reverse Drain Current vs.
Source to Drain Voltage
20
tf
VGS = 10 V, VDD = 75 V
PW = 5 µs, duty ≤ 1 %
RG = 10 Ω
100
Reverse Drain Current IDR (A)
1000
Switching Time t (ns)
100
tr
td(off)
td(on)
tf
10
tr
1
0.1
0.3
1
3
Drain Current
Rev.1.00 Mar 20, 2007 page 4 of 6
10
30
ID (A)
100
16
12
8
4
10 V
5V
VGS = 0, −5 V
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Gate to Source Voltage VGS (V)
VGS = 10 V
Forward Transfer Admittance |yfs| (S)
0.5
10000
Capacitance C (pF)
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
Drain to Source Voltage VDS (V)
Static Drain to Source on State Resistance
RDS(on) (Ω)
HAT2299WP
HAT2299WP
Gate to Source Cutoff Voltage
vs. Case Temperature
5
Gate to Source Cutoff Voltage
VGS(off) (V)
VDS = 10 V
ID = 10 mA
4
1 mA
3
0.1 mA
2
1
0
-25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch - c(t) = γs (t) • θ ch - c
θ ch - c = 5°C/ W, Tc = 25°C
0.1
0.05
0.03
PDM
0.02
1
0.0
D=
e
uls
PW
p
ot
T
h
0.01
10 µ
1s
PW
T
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Vin
10%
RL
Vout
10 Ω
Vin
10 V
VDD
= 75V
10%
90%
td(on)
Rev.1.00 Mar 20, 2007 page 5 of 6
10%
tr
90%
td(off)
tf
HAT2299WP
Package Dimensions
JEITA Package Code
−
RENESAS Code
PWSN0008DA-A
Previous Code
WPAKV
MASS[Typ.]
0.075g
0.8Max
5.1 ± 0.2
Unit: mm
0.5 ± 0.15
Package Name
WPAK
4.21Typ
1.27Typ
+0.1
-0.2
5.9
3.8 ± 0.2
+0.1
-0.3
6.1
3.9 ± 0.2
0.05Max
0Min
Stand-off
1.27Typ
0.2Typ
0.5 ± 0.15
0.635Max
0.7Typ
0.04Min
0.4 ± 0.06
4.9 ± 0.1
(Ni/Pd/Au plating)
Notice:The reverse pattern of die-pad
support lead described above exists.
Ordering Information
Part Name
HAT2299WP-EL-E
Quantity
2500 pcs
Rev.1.00 Mar 20, 2007 page 6 of 6
Shipping Container
Taping
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
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