CYStech Electronics Corp. Spec. No. : C904S6R Issued Date : 2013.10.21 Revised Date : Page No. : 1/9 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP54S6R Features • Includes a BTC3906 chip and BTA1514 chip in a SOT-363 package. • Mounting possible with SOT-323 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half. • Pb-free lead plating package. Equivalent Circuit Outline SOT-363 HBNP54S6R Ordering Information Device HBNP54S6R-0-T1-G Package SOT-363 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name HBNP54S6R CYStek Product Specification Spec. No. : C904S6R Issued Date : 2013.10.21 Revised Date : Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC Pd Tj Tstg Limits TR1 (NPN) TR2 (PNP) 180 160 6 600 Unit -160 -160 -6 -600 200(total) 150 -55~+150 *1 V V V mA mW °C °C Note: *1 150mW per element must not be exceeded. Characteristics (Ta=25°C) •Q1, TR1 (NPN) Symbol Min. BVCBO 180 BVCEO 160 BVEBO 6 ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 100 *hFE2 120 *hFE3 40 fT 100 Cob - Typ. 0.1 - Max. 50 50 0.15 0.2 0.9 1.0 270 6 Unit V V V nA nA V V V V MHz pF Test Conditions IC=100μA IC=1mA IE=10μA VCB=180V VEB=6V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA VCE=20V, IC=10mA, f=100MHz VCB=20V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% HBNP54S6R CYStek Product Specification CYStech Electronics Corp. • Q2, TR2 (PNP) Symbol Min. BVCBO -160 BVCEO -160 BVEBO -6 ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 90 *hFE2 120 *hFE3 40 fT 100 Cob - Typ. - Max. -50 -50 -0.2 -0.3 -0.9 -1.0 270 6 Unit V V V nA nA V V V V MHz pF Spec. No. : C904S6R Issued Date : 2013.10.21 Revised Date : Page No. : 3/9 Test Conditions IC=-50μA IC=-1mA IE=-50μA VCB=-160V VEB=-6V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA VCE=-30V, IC=-10mA, f=100MHz VCB=-30V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Recommended Soldering Footprint HBNP54S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C904S6R Issued Date : 2013.10.21 Revised Date : Page No. : 4/9 Q1, Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.08 0.18 1mA 0.06 500uA 400uA 300uA 0.05 0.04 200uA 0.03 IB=100uA 0.02 Collector Current---IC(A) Collector Current---IC(A) 5mA 0.16 0.07 0.01 0.14 2.5mA 2mA 1.5mA 0.12 0.1 0.08 1mA IB=500uA 0.06 0.04 0.02 0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 0 6 Current Gain vs Collector Current 6 Saturation Voltage vs Collector Current 1000 1000 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCESAT=10IB Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C Saturation Voltage---(mV) Current Gain---HFE 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 100 100 VCE=5V 10 10 0.1 1 10 Collector Current---IC(mA) 100 1 100 On Voltage vs Collector Current Saturation Voltage vs Collector Current 10000 10000 1000 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VBEON@VCE=6V On Voltage---(mV) VCESAT=50IB Saturation Voltage---(mV) 10 Collector Current---IC(mA) 100 Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C 1000 100 10 0.1 HBNP54S6R 1 10 Collector Current---IC(mA) 100 1 10 Collector Current---IC(mA) 100 CYStek Product Specification Spec. No. : C904S6R Issued Date : 2013.10.21 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Q1, Typical Characteristics(Cont.) Saturation Voltage vs Collector Current Current Gain vs Collector Current 1000 10000 Current Gain--- HFE Saturation Voltage---(mV) VBESAT@IC=10IB 1000 Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C 100 VCE=5V 100 VCE=2V VCE=1V 10 1 10 Collector Current---IC(mA) 100 0.1 Cutoff Frequency vs Collector Current 100 Capacitance vs Reverse-biased Voltage 1000 100 VCE=10V Capacitance---(pF) Cutoff Frequency---fT(MHz) 1 10 Collector Current--- IC(mA) 100 Cib 10 Cob 10 1 0.1 1 10 Collector Current---IC(mA) 100 0.1 1 10 Reverse-biased Voltage---VR(V) 100 Power Derating Curves Power Dissipation---PD(mW) 250 200 Dual 150 Single 100 50 0 0 HBNP54S6R 50 100 150 Ambient Temperature---TA(℃) 200 CYStek Product Specification Spec. No. : C904S6R Issued Date : 2013.10.21 Revised Date : Page No. : 6/9 CYStech Electronics Corp. Q2, Typical Characteristics Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 10000 VCE(SAT)@IC=10IB Saturation Voltage---(mV) Current Gain---HFE HFE VCE=6V 100 VCE=5V 10 VCE=1V 1000 100 1 0.1 1 10 100 Collector Current---IC(mA) 1 1000 100 1000 Collector Current---IC(mA) Saturation Voltage vs Collector Current Cutoff Frequency vs Collector Current 1000 Cutoff Frequency---fT(MHZ) Saturation Voltage---(mV) 1000 VBE(SAT)@IC=10IB fT@VCE=10V 100 10 100 1 10 100 0.1 1000 1 10 100 Collector Current---IC(mA) Collector Current---IC(mA) Power Derating Curves Capacitance Characteristics 250 Power Dissipation---PD(mW) 100 Cib Capacitance---(pF) 10 10 Cob f=1MHz 200 Dual 150 Single 100 50 0 1 0.1 HBNP54S6R 1 10 Reverse-biased Voltage---VR(V) 100 0 50 100 150 Ambient Temperature---TA(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C904S6R Issued Date : 2013.10.21 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension HBNP54S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C904S6R Issued Date : 2013.10.21 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. HBNP54S6R CYStek Product Specification Spec. No. : C904S6R Issued Date : 2013.10.21 Revised Date : Page No. : 9/9 CYStech Electronics Corp. SOT-363 Dimension Marking: ● KNM Device Code 6-Lead SOT-363 Plastic Surface Mounted Package CYStek Package Code: S6R Style: Pin 1. Emitter1 (E1) Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Millimeters Min. Max. 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.080 0.150 2.000 2.200 1.150 1.350 DIM A A1 A2 b c D E Inches Min. Max. 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.003 0.006 0.079 0.087 0.045 0.053 DIM E1 e e1 L L1 θ Millimeters Min. Max. 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Inches Min. Max. 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. HBNP54S6R CYStek Product Specification