IXYS DFE10I600PM Fast recovery diode low loss and soft recovery single diode Datasheet

DFE 10 I 600PM
advanced
V RRM =
I FAV =
t rr =
FRED
Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
600 V
10 A
35 ns
Part number (Marking on product)
3
DFE 10 I 600PM
1
Backside: isolated
Features / Advantages:
Applications:
Package:
● Planar passivated chips
● Llow leakage current
● Very short recovery time
● Improved thermal behaviour
● Low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
TO-220ACFP
● Industry standard outline
● Plastic overmolded tab for
electrical isolation
● Epoxy meets UL 94V-0
● RoHS compliant
Ratings
Symbol
Definition
VRRM
max. repetitive reverse voltage
IR
reverse current
VF
Conditions
forward voltage
I FAV
average forward current
VF0
rF
threshold voltage
slope resistance
min.
TVJ = 25 °C
thermal resistance junction to case
TVJ
virtual junction temperature
Ptot
total power dissipation
I FSM
max. forward surge current
I RM
max. reverse recovery current
600
V
TVJ = 25 °C
20
µA
TVJ = 125 °C
1.5
mA
I F = 10 A
I F = 20 A
TVJ = 25 °C
1.50
V
1.80
V
I F = 10 A
I F = 20 A
TVJ = 150 °C
1.30
1.70
V
V
rectangular, d = 0.5
T C = 100 °C
10
A
T VJ = 150 °C
0.98
28.7
V
mΩ
4.20
K/W
150
°C
= 25 °C
-55
30
W
t p = 10 ms (50 Hz), sine
TVJ = 45 °C
100
A
I F = 10 A;
TVJ = 25 °C
TVJ = 125 °C
4
A
A
VR = 300 V
TVJ = 25 °C
TVJ = 125 °C
35
120
ns
ns
tbd
pF
TC
-diF /dt = 100 A/µs
reverse recovery time
CJ
junction capacitance
VR = 300 V; f = 1 MHz
TVJ = 25 °C
EAS
non-repetitive avalanche energy
I AS = tbd A; L = 100 µH
TVJ = 25 °C
I AR
repetitive avalanche current
VA = 1.5·VR typ.; f = 10 kHz
* Data according to IEC 60747and per diode unless otherwise specified
tbd
mJ
tbd
A
0630
© 2006 IXYS all rights reserved
Unit
VR = 600 V
t rr
IXYS reserves the right to change limits, conditions and dimensions.
max.
VR = 600 V
for power loss calculation only
R thJC
typ.
DFE 10 I 600PM
advanced
Ratings
Symbol
Definition
Conditions
I RMS
RMS current
per pin*
RthCH
thermal resistance case to heatsink
MD
mounting torque
FC
mounting force with clip
T stg
storage temperature
Weight
min.
typ.
max.
Unit
35
A
0.50
K/W
0.4
0.6
Nm
20
60
N
-55
150
°C
2
g
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Outlines TO-220ACFP
© 2006 IXYS all rights reserved
* Data according to IEC 60747and per diode unless otherwise specified
0630
IXYS reserves the right to change limits, conditions and dimensions.
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