DFE 10 I 600PM advanced V RRM = I FAV = t rr = FRED Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 10 A 35 ns Part number (Marking on product) 3 DFE 10 I 600PM 1 Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips ● Llow leakage current ● Very short recovery time ● Improved thermal behaviour ● Low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) TO-220ACFP ● Industry standard outline ● Plastic overmolded tab for electrical isolation ● Epoxy meets UL 94V-0 ● RoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF Conditions forward voltage I FAV average forward current VF0 rF threshold voltage slope resistance min. TVJ = 25 °C thermal resistance junction to case TVJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current 600 V TVJ = 25 °C 20 µA TVJ = 125 °C 1.5 mA I F = 10 A I F = 20 A TVJ = 25 °C 1.50 V 1.80 V I F = 10 A I F = 20 A TVJ = 150 °C 1.30 1.70 V V rectangular, d = 0.5 T C = 100 °C 10 A T VJ = 150 °C 0.98 28.7 V mΩ 4.20 K/W 150 °C = 25 °C -55 30 W t p = 10 ms (50 Hz), sine TVJ = 45 °C 100 A I F = 10 A; TVJ = 25 °C TVJ = 125 °C 4 A A VR = 300 V TVJ = 25 °C TVJ = 125 °C 35 120 ns ns tbd pF TC -diF /dt = 100 A/µs reverse recovery time CJ junction capacitance VR = 300 V; f = 1 MHz TVJ = 25 °C EAS non-repetitive avalanche energy I AS = tbd A; L = 100 µH TVJ = 25 °C I AR repetitive avalanche current VA = 1.5·VR typ.; f = 10 kHz * Data according to IEC 60747and per diode unless otherwise specified tbd mJ tbd A 0630 © 2006 IXYS all rights reserved Unit VR = 600 V t rr IXYS reserves the right to change limits, conditions and dimensions. max. VR = 600 V for power loss calculation only R thJC typ. DFE 10 I 600PM advanced Ratings Symbol Definition Conditions I RMS RMS current per pin* RthCH thermal resistance case to heatsink MD mounting torque FC mounting force with clip T stg storage temperature Weight min. typ. max. Unit 35 A 0.50 K/W 0.4 0.6 Nm 20 60 N -55 150 °C 2 g * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-220ACFP © 2006 IXYS all rights reserved * Data according to IEC 60747and per diode unless otherwise specified 0630 IXYS reserves the right to change limits, conditions and dimensions.