BAT46 ® SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose, metalto silicon diode featuring high breakdown voltage low turn-on voltage. DO 35 (Glass) ABSOLUTE RATINGS (limiting values) Symbol VRRM Parameter Repetitive Peak Reverse Voltage Value Unit 100 V Forward Continuous Current* Ta = 25 °C 150 mA IFRM Repetitive Peak Forward Current* tp ≤ 1s δ ≤ 0.5 350 mA IFSM Surge non Repetitive Forward Current* tp = 10ms 750 mA Ptot Power Dissipation* TI = 80°C 150 mW Tstg Tj Storage and Junction Temperature Range - 65 to + 150 - 65 to + 125 °C TL Maximum Temperature for Soldering during 10s at 4mm from Case 230 °C IF THERMAL RESISTANCE Symbol Rth(j-a) Test Conditions Junction-ambient* Value Unit 300 °C/W * On infinite heatsink with 4mm lead length. August 1999 Ed: 1A 1/4 BAT46 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. 100 V VBR Tj = 25°C IF = 10µA VF * Tj = 25°C IF = 0.1mA 0.25 Tj = 25°C IF = 10mA 0.45 Tj = 25°C IF = 250mA Tj = 25°C VR = 1.5V IR * Unit V 1 0.5 Tj = 60°C µA 5 Tj = 25°C 0.8 VR = 10V Tj = 60°C 7.5 Tj = 25°C VR = 50V 2 Tj = 60°C 15 Tj = 25°C VR = 75V 5 Tj = 60°C 20 DYNAMIC CHARACTERISTICS Symbol C Test Conditions Tj = 25°C VR = 0V Tj = 25°C VR = 1V * Pulse test: tp ≤ 300µs δ < 2%. 2/4 Min. f = 1Mhz Typ. 10 6 Max. Unit pF BAT46 Fig. 1-1: Forward voltage drop versus forward current (low level, typical values) Fig. 1-2: Forward voltage drop versus forward current (high level, typical values) IFM(A) IFM(mA) 20 18 16 14 12 10 8 6 4 2 0 0.0 0.1 5E-1 Tj=125°C Tj=125°C Tj=25°C Tj=25°C 1E-1 0.6 VFM(V) 1E-2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Fig. 2: Leakage current versus reverse voltage applied (typical values) Fig. 3: Leakage current versus junction temperature (typical values) 1E+3 VFM(V) 0.2 0.3 0.4 0.5 IR(µA) IR(µA) 1E+3 Tj=125°C VR=75V Tj=100°C 1E+2 1E+2 Tj=75°C 1E+1 1E+1 Tj=50°C 1E+0 1E-1 Tj=25°C 1E+0 VR(V) 0 10 20 30 40 50 60 70 Tj(°C) 80 90 100 1E-1 0 25 50 75 100 125 Fig. 4: Junction capacitance versus reverse voltage applied (typical values) C(pF) 10 F=1MHz Tj=25°C 5 2 1 VR(V) 1 10 100 3/4 BAT46 PACKAGE MECHANICAL DATA DO 35 Glass C A C O / B REF. O /D O /D DIMENSIONS Millimeters Inches A Min. 3.05 Max. 4.50 Min. 0.120 Max. 0.177 B C 1.53 12.7 2.00 0.060 0.500 0.079 D 0.458 0.558 0.018 0.022 Cooling method : by convection and conduction Marking: clear, ring at cathode end. Weight: 0.15g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4