Numonyx M29W320DB90ZA6T 32 mbit (4mbx8 or 2mbx16, non-uniform parameter blocks, boot block), 3v supply flash memory Datasheet

M29W320DT
M29W320DB
32 Mbit (4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks,
Boot Block), 3V Supply Flash memory
Feature summary
■
Supply Voltage
– VCC = 2.7V to 3.6V for Program, Erase and
Read
– VPP =12V for Fast Program (optional)
■
Access time: 70, 90ns
■
Programming time
– 10µs per Byte/Word typical
■
67 memory blocks
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 64 Main Blocks
■
Program/Erase controller
– Embedded Byte/Word Program algorithms
■
Erase Suspend and Resume modes
– Read and Program another Block during
Erase Suspend
■
Unlock Bypass Program command
– Faster Production/Batch Programming
■
VPP/WP pin for Fast Program and Write Protect
■
Temporary Block Unprotection mode
■
Common Flash Interface
– 64 bit Security code
■
Low power consumption
– Standby and Automatic Standby
■
100,000 Program/Erase cycles per block
■
Electronic Signature
– Manufacturer Code: 0020h
– Top Device Code M29W320DT: 22CAh
– Bottom Device Code M29W320DB: 22CBh
■
ECOPACK® packages available
March 2008
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZE)
Rev 10
1/56
www.numonyx.com
1
Contents
M29W320DT, M29W320DB
Contents
1
Summary description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2
Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3
4
2/56
2.1
Address Inputs (A0-A20) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.2
Data Inputs/Outputs (DQ0-DQ7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.3
Data Inputs/Outputs (DQ8-DQ14) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.4
Data Input/Output or Address Input (DQ15A–1) . . . . . . . . . . . . . . . . . . . 12
2.5
Chip Enable (E) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.6
Output Enable (G) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.7
Write Enable (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.8
VPP/Write Protect (VPP/WP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.9
Reset/Block Temporary Unprotect (RP) . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.10
Ready/Busy Output (RB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.11
Byte/Word Organization Select (BYTE) . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.12
VCC Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.13
VSS Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.1
Bus Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.2
Bus Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.3
Output Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.4
Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.5
Automatic Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.6
Special bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.6.1
Electronic Signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.6.2
Block Protect and Chip Unprotect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Command Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.1
Read/Reset command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2
Auto Select command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.3
Read CFI Query command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.4
Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
M29W320DT, M29W320DB
5
Contents
4.5
Unlock Bypass command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.6
Unlock Bypass Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.7
Unlock Bypass Reset command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.8
Chip Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.9
Block Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.10
Erase Suspend command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.11
Erase Resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.12
Block Protect and Chip Unprotect commands . . . . . . . . . . . . . . . . . . . . . 21
Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.1
Data Polling Bit (DQ7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.2
Toggle Bit (DQ6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.3
Error Bit (DQ5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
5.4
Erase Timer Bit (DQ3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
5.5
Alternative Toggle Bit (DQ2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
6
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
7
DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
8
Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
9
Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Appendix A Block Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Appendix B Common Flash Interface (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Appendix C Block Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
10
C.1
Programmer Technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
C.2
In-System Technique. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
3/56
List of tables
M29W320DT, M29W320DB
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Table 22.
Table 23.
Table 24.
Table 25.
Table 26.
Table 27.
Table 28.
4/56
Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Bus Operations, BYTE = VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Bus Operations, BYTE = VIH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Commands, 16-bit mode, BYTE = VIH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Commands, 8-bit mode, BYTE = VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Program, Erase Times and Program, Erase Endurance Cycles. . . . . . . . . . . . . . . . . . . . . 24
Status Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Operating and AC Measurement Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Device Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Write AC Characteristics, Write Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Write AC Characteristics, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Reset/Block Temporary Unprotect AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Package Mechanical Data. . . . . . . 37
TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, Package Mechanical Data . . . . . . . . . . 38
Ordering Information Scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Top Boot Block Addresses, M29W320DT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Bottom Boot Block Addresses, M29W320DB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Primary Algorithm-Specific Extended Query Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Security Code Area. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Programmer Technique Bus Operations, BYTE = VIHor VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
M29W320DT, M29W320DB
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Logic Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
TSOP Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
TFBGA48 Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Block Addresses (x8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Block Addresses (x16) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Data Polling Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Data Toggle Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
AC Measurement I/O Waveform. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Read Mode AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Write AC Waveforms, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Write AC Waveforms, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Reset/Block Temporary Unprotect AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Accelerated Program Timing Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
TSOP48 Lead Plastic Thin Small Outline, 12x20 Mm, Top View Package Outline . . . . . . 37
TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, Bottom View Package Outline . . . . . . . 38
Programmer Equipment Block Protect Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Programmer Equipment Chip Unprotect Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
In-System Equipment Block Protect Flowchart. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
In-System Equipment Chip Unprotect Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
5/56
Summary description
1
M29W320DT, M29W320DB
Summary description
The M29W320D is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read,
erased and reprogrammed. These operations can be performed using a single low voltage
(2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be
read in the same way as a ROM or EPROM.
The memory is divided into blocks that can be erased independently so it is possible to
preserve valid data while old data is erased. Each block can be protected independently to
prevent accidental Program or Erase commands from modifying the memory. Program and
Erase commands are written to the Command Interface of the memory. An on-chip
Program/Erase Controller simplifies the process of programming or erasing the memory by
taking care of all of the special operations that are required to update the memory contents.
The end of a program or erase operation can be detected and any error conditions
identified. The command set required to control the memory is consistent with JEDEC
standards.
The blocks in the memory are asymmetrically arranged, see Figure 4 and Figure 5, Table 19
and Table 20. The first or last 64 Kbytes have been divided into four additional blocks. The
16 Kbyte Boot Block can be used for small initialization code to start the microprocessor, the
two 8 Kbyte Parameter Blocks can be used for parameter storage and the remaining 32
Kbyte is a small Main Block where the application may be stored.
Chip Enable, Output Enable and Write Enable signals control the bus operation of the
memory. They allow simple connection to most microprocessors, often without additional
logic.
The memory is offered in TSOP48 (12 x 20mm), and TFBGA48 (6x8mm, 0.8mm pitch)
packages. In order to meet environmental requirements, Numonyx offers the M29W320D in
ECOPACK® packages. ECOPACK packages are Lead-free. The category of second Level
Interconnect is marked on the package and on the inner box label, in compliance with
JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label.
The memory is supplied with all the bits erased (set to 1).
6/56
M29W320DT, M29W320DB
Figure 1.
Summary description
Logic Diagram
VCC VPP/WP
21
15
A0-A20
DQ0-DQ14
DQ15A–1
W
E
M29W320DT
M29W320DB
G
RB
RP
BYTE
VSS
AI90189B
Table 1.
Signal Names
A0-A20
Address Inputs
DQ0-DQ7
Data Inputs/Outputs
DQ8-DQ14
Data Inputs/Outputs
DQ15A–1
Data Input/Output or Address Input
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
BYTE
Byte/Word Organization Select
VCC
Supply Voltage
VPP/WP
VPP/Write Protect
VSS
Ground
NC
Not Connected Internally
7/56
Summary description
Figure 2.
M29W320DT, M29W320DB
TSOP Connections
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
W
RP
NC
VPP/WP
RB
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
48
12 M29W320DT 37
13 M29W320DB 36
24
25
AI90190
8/56
A16
BYTE
VSS
DQ15A–1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
G
VSS
E
A0
M29W320DT, M29W320DB
Figure 3.
Summary description
TFBGA48 Connections (Top view through package)
1
2
3
4
5
6
A
A3
A7
RB
W
A9
A13
B
A4
A17
VPP/WP
RP
A8
A12
C
A2
A6
A18
NC
A10
A14
D
A1
A5
A20
A19
A11
A15
E
A0
DQ0
DQ2
DQ5
DQ7
A16
F
E
DQ8
DQ10
DQ12
DQ14
BYTE
G
G
DQ9
DQ11
VCC
DQ13
DQ15
A–1
H
VSS
DQ1
DQ3
DQ4
DQ6
VSS
AI08084
9/56
Summary description
Figure 4.
M29W320DT, M29W320DB
Block Addresses (x8)
M29W320DT
Top Boot Block Addresses (x8)
M29W320DB
Bottom Boot Block Addresses (x8)
3FFFFFh
3FFFFFh
16 KByte
64 KByte
3FC000h
3FBFFFh
3F0000h
3EFFFFh
8 KByte
64 KByte
3FA000h
3F9FFFh
3E0000h
Total of 63
64 KByte Blocks
8 KByte
3F8000h
3F7FFFh
32 KByte
3F0000h
3EFFFFh
01FFFFh
64 KByte
64 KByte
3E0000h
010000h
00FFFFh
32 KByte
Total of 63
64 KByte Blocks
01FFFFh
008000h
007FFFh
8 KByte
006000h
005FFFh
64 KByte
010000h
00FFFFh
8 KByte
004000h
003FFFh
64 KByte
000000h
16 KByte
000000h
AI90192
1. Also see Appendix A: Block Addresses, Table 19 and Table 20 for a full listing of the Block Addresses.
10/56
M29W320DT, M29W320DB
Figure 5.
Summary description
Block Addresses (x16)
M29W320DT
Top Boot Block Addresses (x16)
M29W320DB
Bottom Boot Block Addresses (x16)
1FFFFFh
1FFFFFh
8 KWord
32 KWord
1FE000h
1FDFFFh
1F8000h
1F7FFFh
4 KWord
32 KWord
1FD000h
1FCFFFh
1F0000h
Total of 63
32 KWord Blocks
4 KWord
1FC000h
1FBFFFh
16 KWord
1F8000h
1F7FFFh
00FFFFh
32 KWord
32 KWord
1F0000h
008000h
007FFFh
16 KWord
Total of 63
32 KWord Blocks
00FFFFh
004000h
003FFFh
4 KWord
003000h
002FFFh
32 KWord
008000h
007FFFh
4 KWord
002000h
001FFFh
32 KWord
000000h
8 KWord
000000h
AI90193
1. Also see Appendix Appendix A: Block Addresses, Table 19 and Table 20 for a full listing of the Block Addresses.
11/56
Signal descriptions
2
M29W320DT, M29W320DB
Signal descriptions
See Figure 1: Logic Diagram, and Table 1: Signal Names, for a brief overview of the signals
connected to this device.
2.1
Address Inputs (A0-A20)
The Address Inputs select the cells in the memory array to access during Bus Read
operations. During Bus Write operations they control the commands sent to the Command
Interface of the internal state machine.
2.2
Data Inputs/Outputs (DQ0-DQ7)
The Data I/O outputs the data stored at the selected address during a Bus Read operation.
During Bus Write operations they represent the commands sent to the Command Interface
of the internal state machine.
2.3
Data Inputs/Outputs (DQ8-DQ14)
The Data I/O outputs the data stored at the selected address during a Bus Read operation
when BYTE is High, VIH. When BYTE is Low, VIL, these pins are not used and are high
impedance. During Bus Write operations the Command Register does not use these bits.
When reading the Status Register these bits should be ignored.
2.4
Data Input/Output or Address Input (DQ15A–1)
When BYTE is High, VIH, this pin behaves as a Data Input/Output pin (as DQ8-DQ14).
When BYTE is Low, VIL, this pin behaves as an address pin; DQ15A–1 Low will select the
LSB of the Word on the other addresses, DQ15A–1 High will select the MSB. Throughout
the text consider references to the Data Input/Output to include this pin when BYTE is High
and references to the Address Inputs to include this pin when BYTE is Low except when
stated explicitly otherwise.
2.5
Chip Enable (E)
The Chip Enable, E, activates the memory, allowing Bus Read and Bus Write operations to
be performed. When Chip Enable is High, VIH, all other pins are ignored.
2.6
Output Enable (G)
The Output Enable, G, controls the Bus Read operation of the memory.
12/56
M29W320DT, M29W320DB
2.7
Signal descriptions
Write Enable (W)
The Write Enable, W, controls the Bus Write operation of the memory’s Command Interface.
2.8
VPP/Write Protect (VPP/WP)
The VPP/Write Protect pin provides two functions. The VPP function allows the memory to
use an external high voltage power supply to reduce the time required for Unlock Bypass
Program operations. The Write Protect function provides a hardware method of protecting
the 16 Kbyte Boot Block. The VPP/Write Protect pin must not be left floating or unconnected.
When VPP/Write Protect is Low, VIL, the memory protects the 16 Kbyte Boot Block; Program
and Erase operations in this block are ignored while VPP/Write Protect is Low.
When VPP/Write Protect is High, VIH, the memory reverts to the previous protection status
of the 16 Kbyte boot block. Program and Erase operations can now modify the data in the 16
Kbyte Boot Block unless the block is protected using Block Protection.
When VPP/Write Protect is raised to VPP the memory automatically enters the Unlock
Bypass mode. When VPP/Write Protect returns to VIH or VIL normal operation resumes.
During Unlock Bypass Program operations the memory draws IPP from the pin to supply the
programming circuits. See the description of the Unlock Bypass command in the Command
Interface section. The transitions from VIH to VPP and from VPP to VIH must be slower than
tVHVPP, see Figure 13.
Never raise VPP/Write Protect to VPP from any mode except Read mode, otherwise the
memory may be left in an indeterminate state.
A 0.1µF capacitor should be connected between the VPP/Write Protect pin and the VSS
Ground pin to decouple the current surges from the power supply. The PCB track widths
must be sufficient to carry the currents required during Unlock Bypass Program, IPP.
2.9
Reset/Block Temporary Unprotect (RP)
The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the
memory or to temporarily unprotect all Blocks that have been protected.
Note that if VPP/WP is at VIL, then the 16 KByte outermost boot block will remain protect
even if RP is at VID.
A Hardware Reset is achieved by holding Reset/Block Temporary Unprotect Low, VIL, for at
least tPLPX. After Reset/Block Temporary Unprotect goes High, VIH, the memory will be
ready for Bus Read and Bus Write operations after tPHEL or tRHEL, whichever occurs last.
See the Ready/Busy Output section, Table 15 and Figure 12, for more details.
Holding RP at VID will temporarily unprotect the protected Blocks in the memory. Program
and Erase operations on all blocks will be possible. The transition from VIH to VID must be
slower than tPHPHH.
13/56
Signal descriptions
2.10
M29W320DT, M29W320DB
Ready/Busy Output (RB)
The Ready/Busy pin is an open-drain output that can be used to identify when the device is
performing a Program or Erase operation. During Program or Erase operations Ready/Busy
is Low, VOL. Ready/Busy is high-impedance during Read mode, Auto Select mode and
Erase Suspend mode.
Note that if VPP/WP is at VIL, then the 16 KByte outermost boot block will remain protect
even if RP is at VID.
After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy
becomes high-impedance. See Table 15 and Figure 12.
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.
2.11
Byte/Word Organization Select (BYTE)
The Byte/Word Organization Select pin is used to switch between the x8 and x16 Bus
modes of the memory. When Byte/Word Organization Select is Low, VIL, the memory is in
x8 mode, when it is High, VIH, the memory is in x16 mode.
2.12
VCC Supply Voltage
VCC provides the power supply for all operations (Read, Program and Erase).
The Command Interface is disabled when the VCC Supply Voltage is less than the Lockout
Voltage, VLKO. This prevents Bus Write operations from accidentally damaging the data
during power up, power down and power surges. If the Program/Erase Controller is
programming or erasing during this time then the operation aborts and the memory contents
being altered will be invalid.
A 0.1µF capacitor should be connected between the VCC Supply Voltage pin and the VSS
Ground pin to decouple the current surges from the power supply. The PCB track widths
must be sufficient to carry the currents required during Program and Erase operations, ICC3.
2.13
VSS Ground
VSS is the reference for all voltage measurements.
14/56
M29W320DT, M29W320DB
3
Bus operations
Bus operations
There are five standard bus operations that control the device. These are Bus Read, Bus
Write, Output Disable, Standby and Automatic Standby. See Table 2 and Table 3, Bus
operations, for a summary. Typically glitches of less than 5ns on Chip Enable or Write
Enable are ignored by the memory and do not affect bus operations.
3.1
Bus Read
Bus Read operations read from the memory cells, or specific registers in the Command
Interface. A valid Bus Read operation involves setting the desired address on the Address
Inputs, applying a Low signal, VIL, to Chip Enable and Output Enable and keeping Write
Enable High, VIH. The Data Inputs/Outputs will output the value, see Figure 9: Read Mode
AC Waveforms, and Table 12: Read AC Characteristics, for details of when the output
becomes valid.
3.2
Bus Write
Bus Write operations write to the Command Interface. A valid Bus Write operation begins by
setting the desired address on the Address Inputs. The Address Inputs are latched by the
Command Interface on the falling edge of Chip Enable or Write Enable, whichever occurs
last. The Data Inputs/Outputs are latched by the Command Interface on the rising edge of
Chip Enable or Write Enable, whichever occurs first. Output Enable must remain High, VIH,
during the whole Bus Write operation. See Figure 10 and Figure 11, Write AC waveforms,
and Table 13 and Table 14, Write AC Characteristics, for details of the timing requirements.
3.3
Output Disable
The Data Inputs/Outputs are in the high impedance state when Output Enable is High, VIH.
3.4
Standby
When Chip Enable is High, VIH, the memory enters Standby mode and the Data
Inputs/Outputs pins are placed in the high-impedance state. To reduce the Supply Current to
the Standby Supply Current, ICC2, Chip Enable should be held within VCC ± 0.2V. For the
Standby current level see Table 11: DC Characteristics.
During program or erase operations the memory will continue to use the Program/Erase
Supply Current, ICC3, for Program or Erase operations until the operation completes.
3.5
Automatic Standby
If CMOS levels (VCC ± 0.2V) are used to drive the bus and the bus is inactive for 300ns or
more the memory enters Automatic Standby where the internal Supply Current is reduced to
the Standby Supply Current, ICC2. The Data Inputs/Outputs will still output data if a Bus
Read operation is in progress.
15/56
Bus operations
3.6
M29W320DT, M29W320DB
Special bus operations
Additional bus operations can be performed to read the Electronic Signature and also to
apply and remove Block Protection. These bus operations are intended for use by
programming equipment and are not usually used in applications. They require VID to be
applied to some pins.
3.6.1
Electronic Signature
The memory has two codes, the manufacturer code and the device code, that can be read
to identify the memory. These codes can be read by applying the signals listed in Table 2
and Table 3, Bus Operations.
3.6.2
Block Protect and Chip Unprotect
Each block can be separately protected against accidental Program or Erase. The whole
chip can be unprotected to allow the data inside the blocks to be changed.
Block Protect and Chip Unprotect operations are described in Appendix C: Block Protection.
Table 2.
Bus Operations, BYTE = VIL(1)
Operation
E
G
Address Inputs
DQ15A–1, A0-A20
W
Data Inputs/Outputs
DQ14-DQ8
DQ7-DQ0
Bus Read
VIL
VIL
VIH
Cell Address
Hi-Z
Data Output
Bus Write
VIL
VIH
VIL
Command Address
Hi-Z
Data Input
X
VIH
VIH
X
Hi-Z
Hi-Z
Standby
VIH
X
X
X
Hi-Z
Hi-Z
Read Manufacturer
Code
VIL
VIL
VIH
A0 = VIL, A1 = VIL, A9 = VID,
Others VIL or VIH
Hi-Z
20h
Read Device Code
VIL
VIL
VIH
A0 = VIH, A1 = VIL,
A9 = VID, Others VIL or VIH
Hi-Z
CAh (M29W320DT)
CBh (M29W320DB)
Output Disable
1. X = VIL or VIH.
Table 3.
Bus Operations, BYTE = VIH(1)
Operation
Address Inputs
A0-A20
Data Inputs/Outputs
DQ15A–1, DQ14-DQ0
E
G
W
Bus Read
VIL
VIL
VIH
Cell Address
Bus Write
VIL
VIH
VIL
Command Address
X
VIH
VIH
X
Hi-Z
Standby
VIH
X
X
X
Hi-Z
Read Manufacturer
Code
VIL
VIL
VIH
A0 = VIL, A1 = VIL, A9 = VID,
Others VIL or VIH
0020h
Read Device Code
VIL
VIL
VIH
A0 = VIH, A1 = VIL, A9 = VID,
Others VIL or VIH
22CAh (M29W320DT)
22CBh (M29W320DB)
Output Disable
1. X = VIL or VIH.
16/56
Data Output
Data Input
M29W320DT, M29W320DB
4
Command Interface
Command Interface
All Bus Write operations to the memory are interpreted by the Command Interface.
Commands consist of one or more sequential Bus Write operations. Failure to observe a
valid sequence of Bus Write operations will result in the memory returning to Read mode.
The long command sequences are imposed to maximize data security.
The address used for the commands changes depending on whether the memory is in 16bit or 8-bit mode. See either Table 4, or Table 5, depending on the configuration that is being
used, for a summary of the commands.
4.1
Read/Reset command
The Read/Reset command returns the memory to its Read mode where it behaves like a
ROM or EPROM, unless otherwise stated. It also resets the errors in the Status Register.
Either one or three Bus Write operations can be used to issue the Read/Reset command.
The Read/Reset Command can be issued, between Bus Write cycles before the start of a
program or erase operation, to return the device to read mode. Once the program or erase
operation has started the Read/Reset command is no longer accepted. The Read/Reset
command will not abort an Erase operation when issued while in Erase Suspend.
4.2
Auto Select command
The Auto Select command is used to read the Manufacturer Code, the Device Code and the
Block Protection Status. Three consecutive Bus Write operations are required to issue the
Auto Select command. Once the Auto Select command is issued the memory remains in
Auto Select mode until a Read/Reset command is issued. Read CFI Query and Read/Reset
commands are accepted in Auto Select mode, all other commands are ignored.
From the Auto Select mode the Manufacturer Code can be read using a Bus Read operation
with A0 = VIL and A1 = VIL. The other address bits may be set to either VIL or VIH. The
Manufacturer Code for Numonyx is 0020h.
The Device Code can be read using a Bus Read operation with A0 = VIH and A1 = VIL. The
other address bits may be set to either VIL or VIH. The Device Code for the M29W320DT is
22CAh and for the M29W320DB is 22CBh.
The Block Protection Status of each block can be read using a Bus Read operation with A0
= VIL, A1 = VIH, and A12-A20 specifying the address of the block. The other address bits
may be set to either VIL or VIH. If the addressed block is protected then 01h is output on
Data Inputs/Outputs DQ0-DQ7, otherwise 00h is output.
17/56
Command Interface
4.3
M29W320DT, M29W320DB
Read CFI Query command
The Read CFI Query Command is used to read data from the Common Flash Interface
(CFI) Memory Area. This command is valid when the device is in the Read Array mode, or
when the device is in Autoselected mode.
One Bus Write cycle is required to issue the Read CFI Query Command. Once the
command is issued subsequent Bus Read operations read from the Common Flash
Interface Memory Area.
The Read/Reset command must be issued to return the device to the previous mode (the
Read Array mode or Autoselected mode). A second Read/Reset command would be
needed if the device is to be put in the Read Array mode from Autoselected mode.
See Appendix B: Common Flash Interface (CFI), Table 21, Table 22, Table 23, Table 24,
Table 25 and Table 26 for details on the information contained in the Common Flash
Interface (CFI) memory area.
4.4
Program command
The Program command can be used to program a value to one address in the memory array
at a time. The command requires four Bus Write operations, the final write operation latches
the address and data in the internal state machine and starts the Program/Erase Controller.
If the address falls in a protected block then the Program command is ignored, the data
remains unchanged. The Status Register is never read and no error condition is given.
During the program operation the memory will ignore all commands. It is not possible to
issue any command to abort or pause the operation. Typical program times are given in
Table 6. Bus Read operations during the program operation will output the Status Register
on the Data Inputs/Outputs. See the section on the Status Register for more details.
After the program operation has completed the memory will return to the Read mode, unless
an error has occurred. When an error occurs the memory will continue to output the Status
Register. A Read/Reset command must be issued to reset the error condition and return to
Read mode.
Note that the Program command cannot change a bit set at ’0’ back to ’1’. One of the Erase
Commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’.
4.5
Unlock Bypass command
The Unlock Bypass command is used in conjunction with the Unlock Bypass Program
command to program the memory. When the cycle time to the device is long (as with some
EPROM programmers) considerable time saving can be made by using these commands.
Three Bus Write operations are required to issue the Unlock Bypass command.
Once the Unlock Bypass command has been issued the memory will only accept the Unlock
Bypass Program command and the Unlock Bypass Reset command. The memory can be
read as if in Read mode.
The memory offers accelerated program operations through the VPP/Write Protect pin.
When the system asserts VPP on the VPP/Write Protect pin, the memory automatically
enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass
18/56
M29W320DT, M29W320DB
Command Interface
program command sequence. The memory uses the higher voltage on the VPP/Write
Protect pin, to accelerate the Unlock Bypass Program operation.
Never raise VPP/Write Protect to VPP from any mode except Read mode, otherwise the
memory may be left in an indeterminate state.
4.6
Unlock Bypass Program command
The Unlock Bypass Program command can be used to program one address in the memory
array at a time. The command requires two Bus Write operations, the final write operation
latches the address and data in the internal state machine and starts the Program/Erase
Controller.
The Program operation using the Unlock Bypass Program command behaves identically to
the Program operation using the Program command. The operation cannot be aborted, the
Status Register is read and protected blocks cannot be programmed. Errors must be reset
using the Read/Reset command, which leaves the device in Unlock Bypass Mode. See the
Program command for details on the behavior.
4.7
Unlock Bypass Reset command
The Unlock Bypass Reset command can be used to return to Read/Reset mode from
Unlock Bypass Mode. Two Bus Write operations are required to issue the Unlock Bypass
Reset command. Read/Reset command does not exit from Unlock Bypass Mode.
4.8
Chip Erase command
The Chip Erase command can be used to erase the entire chip. Six Bus Write operations
are required to issue the Chip Erase Command and start the Program/Erase Controller.
If any blocks are protected then these are ignored and all the other blocks are erased. If all
of the blocks are protected the Chip Erase operation appears to start but will terminate
within about 100µs, leaving the data unchanged. No error condition is given when protected
blocks are ignored.
During the erase operation the memory will ignore all commands, including the Erase
Suspend command. It is not possible to issue any command to abort the operation. Typical
chip erase times are given in Table 6. All Bus Read operations during the Chip Erase
operation will output the Status Register on the Data Inputs/Outputs. See the section on the
Status Register for more details.
After the Chip Erase operation has completed the memory will return to the Read Mode,
unless an error has occurred. When an error occurs the memory will continue to output the
Status Register. A Read/Reset command must be issued to reset the error condition and
return to Read Mode.
The Chip Erase Command sets all of the bits in unprotected blocks of the memory to ’1’. All
previous data is lost.
19/56
Command Interface
4.9
M29W320DT, M29W320DB
Block Erase command
The Block Erase command can be used to erase a list of one or more blocks. Six Bus Write
operations are required to select the first block in the list. Each additional block in the list can
be selected by repeating the sixth Bus Write operation using the address of the additional
block. The Block Erase operation starts the Program/Erase Controller about 50µs after the
last Bus Write operation. Once the Program/Erase Controller starts it is not possible to
select any more blocks. Each additional block must therefore be selected within 50µs of the
last block. The 50µs timer restarts when an additional block is selected. The Status Register
can be read after the sixth Bus Write operation. See the Status Register section for details
on how to identify if the Program/Erase Controller has started the Block Erase operation.
If any selected blocks are protected then these are ignored and all the other selected blocks
are erased. If all of the selected blocks are protected the Block Erase operation appears to
start but will terminate within about 100µs, leaving the data unchanged. No error condition is
given when protected blocks are ignored.
During the Block Erase operation the memory will ignore all commands except the Erase
Suspend command. Typical block erase times are given in Table 6. All Bus Read operations
during the Block Erase operation will output the Status Register on the Data Inputs/Outputs.
See the section on the Status Register for more details.
After the Block Erase operation has completed the memory will return to the Read Mode,
unless an error has occurred. When an error occurs the memory will continue to output the
Status Register. A Read/Reset command must be issued to reset the error condition and
return to Read mode.
The Block Erase Command sets all of the bits in the unprotected selected blocks to ’1’. All
previous data in the selected blocks is lost.
4.10
Erase Suspend command
The Erase Suspend Command may be used to temporarily suspend a Block Erase
operation and return the memory to Read mode. The command requires one Bus Write
operation.
The Program/Erase Controller will suspend within the Erase Suspend Latency Time (refer to
Table 6 for value) of the Erase Suspend Command being issued. Once the Program/Erase
Controller has stopped the memory will be set to Read mode and the Erase will be
suspended. If the Erase Suspend command is issued during the period when the memory is
waiting for an additional block (before the Program/Erase Controller starts) then the Erase is
suspended immediately and will start immediately when the Erase Resume Command is
issued. It is not possible to select any further blocks to erase after the Erase Resume.
During Erase Suspend it is possible to Read and Program cells in blocks that are not being
erased; both Read and Program operations behave as normal on these blocks. If any
attempt is made to program in a protected block or in the suspended block then the Program
command is ignored and the data remains unchanged. The Status Register is not read and
no error condition is given. Reading from blocks that are being erased will output the Status
Register.
It is also possible to issue the Auto Select, Read CFI Query and Unlock Bypass commands
during an Erase Suspend. The Read/Reset command must be issued to return the device to
Read Array mode before the Resume command will be accepted.
20/56
M29W320DT, M29W320DB
4.11
Command Interface
Erase Resume command
The Erase Resume command must be used to restart the Program/Erase Controller after an
Erase Suspend. The device must be in Read Array mode before the Resume command will
be accepted. An erase can be suspended and resumed more than once.
4.12
Block Protect and Chip Unprotect commands
Each block can be separately protected against accidental Program or Erase. The whole
chip can be unprotected to allow the data inside the blocks to be changed.
Block Protect and Chip Unprotect operations are described in Appendix C: Block Protection.
21/56
Command Interface
M29W320DT, M29W320DB
Commands, 16-bit mode, BYTE = VIH(1)(2)
Table 4.
Command
Length
Bus Write Operations
1st
2nd
3rd
4th
5th
6th
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
1
X
F0
3
555
AA
2AA
55
X
F0
3
555
AA
2AA
55
555
90
4
555
AA
2AA
55
555
A0
3
555
AA
2AA
55
555
20
Unlock Bypass
Program(5)
2
X
A0
PA
PD
Unlock Bypass
Reset(7)
2
X
90
X
00
Chip Erase(5)
6
555
AA
2AA
55
555
2AA
55
555
Read/Reset(3)
Auto Select
(4)
Program(5)
Unlock Bypass
(6)
(5)
6+
555
AA
Suspend(8)
1
X
B0
(9)
Erase Resume
1
X
30
Read CFI Query(10)
1
55
98
Block Erase
Erase
PA
PD
80
555
AA
2AA
55
555
10
80
555
AA
2AA
55
BA
30
1. X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in
hexadecimal.
2. The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ14 and DQ15
are Don’t Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.
3. After a Read/Reset command, read the memory as normal until another command is issued. Read/Reset command is
ignored during algorithm execution.
4. After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status.
5. After Program, Unlock Bypass Program, Chip Erase, Block Erase commands read the Status Register until the
Program/Erase Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase
Command with additional Bus Write Operations until Timeout Bit is set.
6. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands.
7. After the Unlock Bypass Reset command read the memory as normal until another command is issued.
8. After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and Program
commands on non-erasing blocks as normal.
9. After the Erase Resume command the suspended Erase operation resumes, read the Status Register until the
Program/Erase Controller completes and the memory returns to Read Mode.
10. CFI Query command is valid when device is ready to read array data or when device is in autoselected mode.
22/56
M29W320DT, M29W320DB
Command Interface
Commands, 8-bit mode, BYTE = VIL(1)(2)
Table 5.
Command
Length
Bus Write Operations
1st
2nd
3rd
4th
5th
6th
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
1
X
F0
3
AAA
AA
555
55
X
F0
3
AAA
AA
555
55
AAA
90
4
AAA
AA
555
55
AAA
A0
3
AAA
AA
555
55
AAA
20
Unlock Bypass
Program(5)
2
X
A0
PA
PD
Unlock Bypass
Reset(7)
2
X
90
X
00
Chip Erase(5)
6
AAA
AA
555
55
AAA
555
55
AAA
Read/Reset(3)
Auto Select
(4)
Program(5)
Unlock Bypass
(6)
(5)
6+ AAA
AA
Suspend(8)
1
X
B0
(9)
Erase Resume
1
X
30
Read CFI Query(10)
1
AA
98
Block Erase
Erase
PA
PD
80
AAA
AA
555
55
AAA
10
80
AAA
AA
555
55
BA
30
1. X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in
hexadecimal.
2. The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ14 and DQ15
are Don’t Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.
3. After a Read/Reset command, read the memory as normal until another command is issued. Read/Reset command is
ignored during algorithm execution.
4. After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status.
5. After a Program, Unlock Bypass Program, Chip Erase, Block Erase command read the Status Register until the
Program/Erase Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase
Command with additional Bus Write Operations until Timeout Bit is set.
6. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands.
7. After the Unlock Bypass Reset command read the memory as normal until another command is issued.
8. After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and Program
commands on non-erasing blocks as normal.
9. After the Erase Resume command the suspended Erase operation resumes, read the Status Register until the
Program/Erase Controller completes and the memory returns to Read Mode.
10. The CFI Query command is valid when device is ready to read array data or when device is in autoselected mode.
23/56
Command Interface
Table 6.
M29W320DT, M29W320DB
Program, Erase Times and Program, Erase Endurance Cycles
Parameter
Min
Chip Erase
Block Erase (64 KBytes)
Typ(1)(2)
Max(2)
Unit
40
200(3)
s
0.8
(4)
s
6
(4)
µs
Erase Suspend Latency Time
15
25
Program (Byte or Word)
10
200(3)
µs
150
(3)
µs
40
200
(3)
s
20
100(3)
s
Accelerated Program (Byte or Word)
8
Chip Program (Byte by Byte)
Chip Program (Word by Word)
Program/Erase Cycles (per Block)
100,000
cycles
20
years
Data Retention
1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles.
4. Maximum value measured at worst case conditions for both temperature and VCC.
24/56
M29W320DT, M29W320DB
5
Status Register
Status Register
Bus Read operations from any address always read the Status Register during Program and
Erase operations. It is also read during Erase Suspend when an address within a block
being erased is accessed.
The bits in the Status Register are summarized in Table 7: Status Register Bits.
5.1
Data Polling Bit (DQ7)
The Data Polling Bit can be used to identify whether the Program/Erase Controller has
successfully completed its operation or if it has responded to an Erase Suspend. The Data
Polling Bit is output on DQ7 when the Status Register is read.
During Program operations the Data Polling Bit outputs the complement of the bit being
programmed to DQ7. After successful completion of the Program operation the memory
returns to Read mode and Bus Read operations from the address just programmed output
DQ7, not its complement.
During Erase operations the Data Polling Bit outputs ’0’, the complement of the erased state
of DQ7. After successful completion of the Erase operation the memory returns to Read
Mode.
In Erase Suspend mode the Data Polling Bit will output a ’1’ during a Bus Read operation
within a block being erased. The Data Polling Bit will change from a ’0’ to a ’1’ when the
Program/Erase Controller has suspended the Erase operation.
Figure 6: Data Polling Flowchart, gives an example of how to use the Data Polling Bit. A
Valid Address is the address being programmed or an address within the block being
erased.
5.2
Toggle Bit (DQ6)
The Toggle Bit can be used to identify whether the Program/Erase Controller has
successfully completed its operation or if it has responded to an Erase Suspend. The Toggle
Bit is output on DQ6 when the Status Register is read.
During Program and Erase operations the Toggle Bit changes from ’0’ to ’1’ to ’0’, etc., with
successive Bus Read operations at any address. After successful completion of the
operation the memory returns to Read mode.
During Erase Suspend mode the Toggle Bit will output when addressing a cell within a block
being erased. The Toggle Bit will stop toggling when the Program/Erase Controller has
suspended the Erase operation.
If any attempt is made to erase a protected block, the operation is aborted, no error is
signalled and DQ6 toggles for approximately 100µs. If any attempt is made to program a
protected block or a suspended block, the operation is aborted, no error is signalled and
DQ6 toggles for approximately 1µs.
Figure 7: Data Toggle Flowchart, gives an example of how to use the Data Toggle Bit.
25/56
Status Register
5.3
M29W320DT, M29W320DB
Error Bit (DQ5)
The Error Bit can be used to identify errors detected by the Program/Erase Controller. The
Error Bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to write the
correct data to the memory. If the Error Bit is set a Read/Reset command must be issued
before other commands are issued. The Error bit is output on DQ5 when the Status Register
is read.
Note that the Program command cannot change a bit set to ’0’ back to ’1’ and attempting to
do so will set DQ5 to ‘1’. A Bus Read operation to that address will show the bit is still ‘0’.
One of the Erase commands must be used to set all the bits in a block or in the whole
memory from ’0’ to ’1’.
5.4
Erase Timer Bit (DQ3)
The Erase Timer Bit can be used to identify the start of Program/Erase Controller operation
during a Block Erase command. Once the Program/Erase Controller starts erasing the
Erase Timer Bit is set to ’1’. Before the Program/Erase Controller starts the Erase Timer Bit
is set to ’0’ and additional blocks to be erased may be written to the Command Interface.
The Erase Timer Bit is output on DQ3 when the Status Register is read.
5.5
Alternative Toggle Bit (DQ2)
The Alternative Toggle Bit can be used to monitor the Program/Erase controller during
Erase operations. The Alternative Toggle Bit is output on DQ2 when the Status Register is
read.
During Chip Erase and Block Erase operations the Toggle Bit changes from ’0’ to ’1’ to ’0’,
etc., with successive Bus Read operations from addresses within the blocks being erased. A
protected block is treated the same as a block not being erased. Once the operation
completes the memory returns to Read mode.
During Erase Suspend the Alternative Toggle Bit changes from ’0’ to ’1’ to ’0’, etc. with
successive Bus Read operations from addresses within the blocks being erased. Bus Read
operations to addresses within blocks not being erased will output the memory cell data as if
in Read mode.
After an Erase operation that causes the Error Bit to be set the Alternative Toggle Bit can be
used to identify which block or blocks have caused the error. The Alternative Toggle Bit
changes from ’0’ to ’1’ to ’0’, etc. with successive Bus Read Operations from addresses
within blocks that have not erased correctly. The Alternative Toggle Bit does not change if
the addressed block has erased correctly.
26/56
M29W320DT, M29W320DB
Table 7.
Status Register
Status Register Bits(1)
Operation
Address
DQ7
DQ6
DQ5
DQ3
DQ2
RB
Program
Any Address
DQ7
Toggle
0
–
–
0
Program During Erase
Suspend
Any Address
DQ7
Toggle
0
–
–
0
Program Error
Any Address
DQ7
Toggle
1
–
–
0
Chip Erase
Any Address
0
Toggle
0
1
Toggle
0
Block Erase before
timeout
Erasing Block
0
Toggle
0
0
Toggle
0
Non-Erasing Block
0
Toggle
0
0
No Toggle
0
Erasing Block
0
Toggle
0
1
Toggle
0
Non-Erasing Block
0
Toggle
0
1
No Toggle
0
Erasing Block
1
No Toggle
0
–
Toggle
1
Block Erase
Erase Suspend
Non-Erasing Block
Data read as normal
1
Good Block Address
0
Toggle
1
1
No Toggle
0
Faulty Block Address
0
Toggle
1
1
Toggle
0
Erase Error
1. Unspecified data bits should be ignored.
Figure 6.
Data Polling Flowchart
START
READ DQ5 & DQ7
at VALID ADDRESS
DQ7
=
DATA
YES
NO
NO
DQ5
=1
YES
READ DQ7
at VALID ADDRESS
DQ7
=
DATA
YES
NO
FAIL
PASS
AI90194
27/56
Status Register
Figure 7.
M29W320DT, M29W320DB
Data Toggle Flowchart
START
READ DQ6
READ
DQ5 & DQ6
DQ6
=
TOGGLE
NO
YES
NO
DQ5
=1
YES
READ DQ6
TWICE
DQ6
=
TOGGLE
NO
YES
FAIL
PASS
AI01370C
28/56
M29W320DT, M29W320DB
6
Maximum rating
Maximum rating
Stressing the device above the rating listed in the Absolute Maximum Ratings table may
cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions
for extended periods may affect device reliability. These are stress ratings only and
operation of the device at these or any other conditions above those indicated in the
Operating sections of this specification is not implied. Refer also to the Numonyx SURE
Program and other relevant quality documents.
Table 8.
Absolute Maximum Ratings
Symbol
Parameter
Min
Max
Unit
TBIAS
Temperature Under Bias
–50
125
°C
TSTG
Storage Temperature
–65
150
°C
–0.6
VCC +0.6
V
Voltage(1)(2)
VIO
Input or Output
VCC
Supply Voltage
–0.6
4
V
VID
Identification Voltage
–0.6
13.5
V
VPP
Program Voltage
–0.6
13.5
V
1. Minimum voltage may undershoot to –2V during transition and for less than 20ns during transitions.
2. Maximum voltage may overshoot to VCC +2V during transition and for less than 20ns during transitions.
29/56
DC and AC parameters
7
M29W320DT, M29W320DB
DC and AC parameters
This section summarizes the operating measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics Tables that
follow, are derived from tests performed under the Measurement Conditions summarized in
Table 9: Operating and AC Measurement Conditions. Designers should check that the
operating conditions in their circuit match the operating conditions when relying on the
quoted parameters.
Table 9.
Operating and AC Measurement Conditions
M29W320D
70
Parameter
90
Min
Max
Min
Max
VCC Supply Voltage
3.0
3.6
2.7
3.6
V
Ambient Operating Temperature
–40
85
–40
85
°C
Load Capacitance (CL)
30
Input Rise and Fall Times
Input and Output Timing Ref. Voltages
Figure 8.
30
10
Input Pulse Voltages
pF
10
ns
0 to VCC
0 to VCC
V
VCC/2
VCC/2
V
AC Measurement I/O Waveform
VCC
VCC/2
0V
AI90196
30/56
Unit
M29W320DT, M29W320DB
DC and AC parameters
Figure 1. AC Measurement Load Circuit
VPP
VCC
VCC
25kΩ
DEVICE
UNDER
TEST
25kΩ
CL
0.1µF
0.1µF
CL includes JIG capacitance
AI90197
Table 10.
Symbol
CIN
COUT
Device Capacitance(1)
Parameter
Input Capacitance
Output Capacitance
Test Condition
Min
Max
Unit
VIN = 0V
6
pF
VOUT = 0V
12
pF
1. Sampled only, not 100% tested.
31/56
DC and AC parameters
Table 11.
DC Characteristics
Symbol
Parameter
M29W320DT, M29W320DB
Test Condition
Min
Typ.
Max
Unit
0V ≤VIN ≤VCC
±1
µA
±1
µA
ILI
Input Leakage Current
ILO
Output Leakage Current
0V ≤VOUT ≤VCC
ICC1
Supply Current (Read)
E = VIL, G = VIH,
f = 6MHz
5
10
mA
ICC2
Supply Current (Standby)
E = VCC ±0.2V,
RP = VCC ±0.2V
35
100
µA
VPP/WP =
VIL or VIH
20
mA
VPP/WP =
VPP
20
mA
ICC3(1)
Supply Current
(Program/Erase)
Program/Eras
e
Controller
active
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
0.7VCC
VCC +0.3
V
VPP
Voltage for VPP/WP
Program Acceleration
VCC = 3.0V ±10%
11.5
12.5
V
IPP
Current for VPP/WP
Program Acceleration
VCC = 3.0V ±10%
10
mA
VOL
Output Low Voltage
IOL = 1.8mA
0.45
V
VOH
Output High Voltage
IOH = –100µA
VID
Identification Voltage
IID
Identification Current
VLKO
Program/Erase Lockout
Supply Voltage
1. Sampled only, not 100% tested.
32/56
VCC –0.4
11.5
A9 = VID
1.8
V
12.5
V
100
µA
2.3
V
M29W320DT, M29W320DB
Figure 9.
DC and AC parameters
Read Mode AC Waveforms
tAVAV
A0-A20/
A–1
VALID
tAVQV
tAXQX
E
tELQV
tEHQX
tELQX
tEHQZ
G
tGLQX
tGHQX
tGLQV
tGHQZ
DQ0-DQ7/
DQ8-DQ15
VALID
tBHQV
BYTE
tELBL/tELBH
Table 12.
tBLQZ
AI90198
Read AC Characteristics
M29W320D
Symbol
Alt
Parameter
Test Condition
Unit
70
90
tAVAV
tRC
Address Valid to Next Address Valid
E = VIL,
G = VIL
Min
70
90
ns
tAVQV
tACC
Address Valid to Output Valid
E = VIL,
G = VIL
Max
70
90
ns
tELQX(1)
tLZ
Chip Enable Low to Output Transition
G = VIL
Min
0
0
ns
tELQV
tCE
Chip Enable Low to Output Valid
G = VIL
Max
70
90
ns
tGLQX(1)
tOLZ
Output Enable Low to Output
Transition
E = VIL
Min
0
0
ns
tGLQV
tOE
Output Enable Low to Output Valid
E = VIL
Max
30
35
ns
tEHQZ(1)
tHZ
Chip Enable High to Output Hi-Z
G = VIL
Max
25
30
ns
tGHQZ(1)
tDF
Output Enable High to Output Hi-Z
E = VIL
Max
25
30
ns
tEHQX
tGHQX
tAXQX
tOH
Chip Enable, Output Enable or
Address Transition to Output Transition
Min
0
0
ns
tELBL
tELBH
tELFL
tELFH
Chip Enable to BYTE Low or High
Max
5
5
ns
tBLQZ
tFLQZ
BYTE Low to Output Hi-Z
Max
25
30
ns
tBHQV
tFHQV
BYTE High to Output Valid
Max
30
40
ns
1. Sampled only, not 100% tested.
33/56
DC and AC parameters
M29W320DT, M29W320DB
Figure 10. Write AC Waveforms, Write Enable Controlled
tAVAV
A0-A20/
A–1
VALID
tWLAX
tAVWL
tWHEH
E
tELWL
tWHGL
G
tGHWL
tWLWH
W
tWHWL
tDVWH
DQ0-DQ7/
DQ8-DQ15
tWHDX
VALID
VCC
tVCHEL
RB
tWHRL
Table 13.
AI90199
Write AC Characteristics, Write Enable Controlled
M29W320D
Symbol
Alt
Parameter
Unit
70
90
tAVAV
tWC
Address Valid to Next Address Valid
Min
70
90
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
Min
0
0
ns
tWLWH
tWP
Write Enable Low to Write Enable High
Min
45
50
ns
tDVWH
tDS
Input Valid to Write Enable High
Min
45
50
ns
tWHDX
tDH
Write Enable High to Input Transition
Min
0
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
Min
0
0
ns
tWHWL
tWPH
Write Enable High to Write Enable Low
Min
30
30
ns
tAVWL
tAS
Address Valid to Write Enable Low
Min
0
0
ns
tWLAX
tAH
Write Enable Low to Address Transition
Min
45
50
ns
Output Enable High to Write Enable Low
Min
0
0
ns
tGHWL
tWHGL
tOEH
Write Enable High to Output Enable Low
Min
0
0
ns
tWHRL(1)
tBUSY
Program/Erase Valid to RB Low
Max
30
35
ns
tVCHEL
tVCS
VCC High to Chip Enable Low
Min
50
50
µs
1. Sampled only, not 100% tested.
34/56
M29W320DT, M29W320DB
DC and AC parameters
Figure 11. Write AC Waveforms, Chip Enable Controlled
tAVAV
A0-A20/
A–1
VALID
tELAX
tAVEL
tEHWH
W
tWLEL
tEHGL
G
tGHEL
tELEH
E
tEHEL
tDVEH
DQ0-DQ7/
DQ8-DQ15
tEHDX
VALID
VCC
tVCHWL
RB
tEHRL
Table 14.
AI90200
Write AC Characteristics, Chip Enable Controlled
M29W320D
Symbol
Alt
Parameter
Unit
70
90
tAVAV
tWC
Address Valid to Next Address Valid
Min
70
90
ns
tWLEL
tWS
Write Enable Low to Chip Enable Low
Min
0
0
ns
tELEH
tCP
Chip Enable Low to Chip Enable High
Min
45
50
ns
tDVEH
tDS
Input Valid to Chip Enable High
Min
45
50
ns
tEHDX
tDH
Chip Enable High to Input Transition
Min
0
0
ns
tEHWH
tWH
Chip Enable High to Write Enable High
Min
0
0
ns
tEHEL
tCPH
Chip Enable High to Chip Enable Low
Min
30
30
ns
tAVEL
tAS
Address Valid to Chip Enable Low
Min
0
0
ns
tELAX
tAH
Chip Enable Low to Address Transition
Min
45
50
ns
Output Enable High Chip Enable Low
Min
0
0
ns
tGHEL
tEHGL
tOEH
Chip Enable High to Output Enable Low
Min
0
0
ns
tEHRL(1)
tBUSY
Program/Erase Valid to RB Low
Max
30
35
ns
tVCHWL
tVCS
VCC High to Write Enable Low
Min
50
50
µs
1. Sampled only, not 100% tested.
35/56
DC and AC parameters
M29W320DT, M29W320DB
Figure 12. Reset/Block Temporary Unprotect AC Waveforms
W, E, G
tPHWL, tPHEL, tPHGL
RB
tRHWL, tRHEL, tRHGL
tPLPX
RP
tPHPHH
tPLYH
AI02931c
Table 15.
Reset/Block Temporary Unprotect AC Characteristics
M29W320D
Symbol
Alt
Parameter
Unit
70
90
tPHWL(1)
tPHEL
tPHGL(1)
tRH
RP High to Write Enable Low, Chip Enable
Low, Output Enable Low
Min
50
50
ns
tRHWL(1)
tRHEL(1)
tRHGL(1)
tRB
RB High to Write Enable Low, Chip Enable
Low, Output Enable Low
Min
0
0
ns
tPLPX
tRP
RP Pulse Width
Min
500
500
ns
tPLYH(1)
tREADY
RP Low to Read Mode
Max
25
25
µs
RP Rise Time to VID
Min
500
500
ns
VPP Rise and Fall Time
Min
250
250
ns
tPHPHH
(1)
tVIDR
tVHVPP(1)
1. Sampled only, not 100% tested.
Figure 13. Accelerated Program Timing Waveforms
VPP
VPP/WP
VIL or VIH
tVHVPP
tVHVPP
AI90202
36/56
M29W320DT, M29W320DB
8
Package mechanical
Package mechanical
Figure 14. TSOP48 Lead Plastic Thin Small Outline, 12x20 Mm, Top View Package Outline
1
48
e
D1
B
24
L1
25
A2
E1
E
A
A1
DIE
α
L
C
CP
TSOP-G
1. Drawing not to scale.
Table 16.
TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Package Mechanical Data
millimeters
inches
Symbol
Typ
Min
A
Max
Typ
Min
1.200
Max
0.0472
A1
0.100
0.050
0.150
0.0039
0.0020
0.0059
A2
1.000
0.950
1.050
0.0394
0.0374
0.0413
B
0.220
0.170
0.270
0.0087
0.0067
0.0106
0.100
0.210
0.0039
0.0083
C
CP
0.080
0.0031
D1
12.000
11.900
12.100
0.4724
0.4685
0.4764
E
20.000
19.800
20.200
0.7874
0.7795
0.7953
E1
18.400
18.300
18.500
0.7244
0.7205
0.7283
e
0.500
–
–
0.0197
–
–
L
0.600
0.500
0.700
0.0236
0.0197
0.0276
L1
0.800
a
3
0
5
0.0315
0
5
3
37/56
Package mechanical
M29W320DT, M29W320DB
Figure 15. TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, Bottom View Package Outline
D
D1
FD
FE
SD
SE
E
E1
BALL "A1"
ddd
e
e
b
A
A2
A1
BGA-Z32
1. Drawing not to scale.
Table 17.
TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, Package Mechanical Data
millimeters
inches
Symbol
Typ
Min
A
Max
Typ
Min
1.200
A1
0.0472
0.260
A2
0.0102
0.900
b
Max
0.350
0.450
0.0354
0.0138
0.0177
D
6.000
5.900
6.100
0.2362
0.2323
0.2402
D1
4.000
–
–
0.1575
–
–
ddd
0.100
0.0039
E
8.000
7.900
8.100
0.3150
0.3110
0.3189
E1
5.600
–
–
0.2205
–
–
e
0.800
–
–
0.0315
–
–
FD
1.000
–
–
0.0394
–
–
FE
1.200
–
–
0.0472
–
–
SD
0.400
–
–
0.0157
–
–
SE
0.400
–
–
0.0157
–
–
38/56
M29W320DT, M29W320DB
9
Part numbering
Table 18.
Ordering Information Scheme
Example:
Part numbering
M29W320DB
90
N
1
T
Device Type
M29
Operating Voltage
W = VCC = 2.7 to 3.6V
Device Function
320D = 32 Mbit (x8/x16), Non-Uniform Parameter Blocks,
Boot Block
Array Matrix
T = Top Boot
B = Bottom Boot
Speed
70 = 70 ns
90 = 90 ns
Package
N = TSOP48: 12 x 20 mm
ZE = TFBGA48: 6 x 8mm, 0.8mm pitch
Temperature Range
1 = 0 to 70 °C
6 = –40 to 85 °C
Option
Blank = Standard Packing
T = Tape & Reel Packing
E = ECOPACK Package, Standard Packing
F = ECOPACK Package, Tape & Reel Packing
Devices are shipped from the factory with the memory content bits erased to ’1’.
For a list of available options (Speed, Package, etc...) or for further information on any
aspect of this device, please contact the Numonyx Sales Office nearest to you.
39/56
Block Addresses
Appendix A
Table 19.
40/56
M29W320DT, M29W320DB
Block Addresses
Top Boot Block Addresses, M29W320DT
#
Size
(KByte/KWor
d)
Address Range
(x8)
Address Range
(x16)
66
16/8
3FC000h-3FFFFFh
1FE000h-1FFFFFh
65
8/4
3FA000h-3FBFFFh
1FD000h-1FDFFFh
64
8/4
3F8000h-3F9FFFh
1FC000h-1FCFFFh
63
32/16
3F0000h-3F7FFFh
1F8000h-1FBFFFh
62
64/32
3E0000h-3EFFFFh
1F0000h-1F7FFFh
61
64/32
3D0000h-3DFFFFh
1E8000h-1EFFFFh
60
64/32
3C0000h-3CFFFFh
1E0000h-1E7FFFh
59
64/32
3B0000h-3BFFFFh
1D8000h-1DFFFFh
58
64/32
3A0000h-3AFFFFh
1D0000h-1D7FFFh
57
64/32
390000h-39FFFFh
1C8000h-1CFFFFh
56
64/32
380000h-18FFFFh
1C0000h-1C7FFFh
55
64/32
370000h-37FFFFh
1B8000h-1BFFFFh
54
64/32
360000h-36FFFFh
1B0000h-1B7FFFh
53
64/32
350000h-35FFFFh
1A8000h-1AFFFFh
52
64/32
340000h-34FFFFh
1A0000h-1A7FFFh
51
64/32
330000h-33FFFFh
198000h-19FFFFh
50
64/32
320000h-32FFFFh
190000h-197FFFh
49
64/32
310000h-31FFFFh
188000h-18FFFFh
48
64/32
300000h-30FFFFh
180000h-187FFFh
47
64/32
2F0000h-2FFFFFh
178000h-17FFFFh
46
64/32
2E0000h-2EFFFFh
170000h-177FFFh
45
64/32
2D0000h-2DFFFFh
168000h-16FFFFh
44
64/32
2C0000h-2CFFFFh
160000h-167FFFh
43
64/32
2B0000h-2BFFFFh
158000h-15FFFFh
42
64/32
2A0000h-2AFFFFh
150000h-157FFFh
41
64/32
290000h-29FFFFh
148000h-14FFFFh
40
64/32
280000h-28FFFFh
140000h-147FFFh
39
64/32
270000h-27FFFFh
138000h-13FFFFh
38
64/32
260000h-26FFFFh
130000h-137FFFh
37
64/32
250000h-25FFFFh
128000h-12FFFFh
36
64/32
240000h-24FFFFh
120000h-127FFFh
M29W320DT, M29W320DB
Table 19.
Block Addresses
Top Boot Block Addresses, M29W320DT (continued)
35
64/32
230000h-23FFFFh
118000h-11FFFFh
34
64/32
220000h-22FFFFh
110000h-117FFFh
33
64/32
210000h-21FFFFh
108000h-10FFFFh
32
64/32
200000h-20FFFFh
100000h-107FFFh
31
64/32
1F0000h-1FFFFFh
0F8000h-0FBFFFh
30
64/32
1E0000h-1EFFFFh
0F0000h-0F7FFFh
29
64/32
1D0000h-1DFFFFh
0E8000h-0EFFFFh
28
64/32
1C0000h-1CFFFFh
0E0000h-0E7FFFh
27
64/32
1B0000h-1BFFFFh
0D8000h-0DFFFFh
26
64/32
1A0000h-1AFFFFh
0D0000h-0D7FFFh
25
64/32
190000h-19FFFFh
0C8000h-0CFFFFh
24
64/32
180000h-18FFFFh
0C0000h-0C7FFFh
23
64/32
170000h-17FFFFh
0B8000h-0BFFFFh
22
64/32
160000h-16FFFFh
0B0000h-0B7FFFh
21
64/32
150000h-15FFFFh
0A8000h-0AFFFFh
20
64/32
140000h-14FFFFh
0A0000h-0A7FFFh
19
64/32
130000h-13FFFFh
098000h-09FFFFh
18
64/32
120000h-12FFFFh
090000h-097FFFh
17
64/32
110000h-11FFFFh
088000h-08FFFFh
16
64/32
100000h-10FFFFh
080000h-087FFFh
15
64/32
0F0000h-0FFFFFh
078000h-07FFFFh
14
64/32
0E0000h-0EFFFFh
070000h-077FFFh
13
64/32
0D0000h-0DFFFFh
068000h-06FFFFh
12
64/32
0C0000h-0CFFFFh
060000h-067FFFh
11
64/32
0B0000h-0BFFFFh
058000h-05FFFFh
10
64/32
0A0000h-0AFFFFh
050000h-057FFFh
9
64/32
090000h-09FFFFh
048000h-04FFFFh
8
64/32
080000h-08FFFFh
040000h-047FFFh
7
64/32
070000h-07FFFFh
038000h-03FFFFh
6
64/32
060000h-06FFFFh
030000h-037FFFh
5
64/32
050000h-05FFFFh
028000h-02FFFFh
4
64/32
040000h-04FFFFh
020000h-027FFFh
3
64/32
030000h-03FFFFh
018000h-01FFFFh
2
64/32
020000h-02FFFFh
010000h-017FFFh
1
64/32
010000h-01FFFFh
008000h-00FFFFh
0
64/32
000000h-00FFFFh
000000h-007FFFh
41/56
Block Addresses
Table 20.
42/56
M29W320DT, M29W320DB
Bottom Boot Block Addresses, M29W320DB
#
Size
(KByte/KWord)
Address Range
(x8)
Address Range
(x16)
66
64/32
3F0000h-3FFFFFh
1F8000h-1FFFFFh
65
64/32
3E0000h-3EFFFFh
1F0000h-1F7FFFh
64
64/32
3D0000h-3DFFFFh
1E8000h-1EFFFFh
63
64/32
3C0000h-3CFFFFh
1E0000h-1E7FFFh
62
64/32
3B0000h-3BFFFFh
1D8000h-1DFFFFh
61
64/32
3A0000h-3AFFFFh
1D0000h-1D7FFFh
60
64/32
390000h-39FFFFh
1C8000h-1CFFFFh
59
64/32
380000h-18FFFFh
1C0000h-1C7FFFh
58
64/32
370000h-37FFFFh
1B8000h-1BFFFFh
57
64/32
360000h-36FFFFh
1B0000h-1B7FFFh
56
64/32
350000h-35FFFFh
1A8000h-1AFFFFh
55
64/32
340000h-34FFFFh
1A0000h-1A7FFFh
54
64/32
330000h-33FFFFh
198000h-19FFFFh
53
64/32
320000h-32FFFFh
190000h-197FFFh
52
64/32
310000h-31FFFFh
188000h-18FFFFh
51
64/32
300000h-30FFFFh
180000h-187FFFh
50
64/32
2F0000h-2FFFFFh
178000h-17FFFFh
49
64/32
2E0000h-2EFFFFh
170000h-177FFFh
48
64/32
2D0000h-2DFFFFh
168000h-16FFFFh
47
64/32
2C0000h-2CFFFFh
160000h-167FFFh
46
64/32
2B0000h-2BFFFFh
158000h-15FFFFh
45
64/32
2A0000h-2AFFFFh
150000h-157FFFh
44
64/32
290000h-29FFFFh
148000h-14FFFFh
43
64/32
280000h-28FFFFh
140000h-147FFFh
42
64/32
270000h-27FFFFh
138000h-13FFFFh
41
64/32
260000h-26FFFFh
130000h-137FFFh
40
64/32
250000h-25FFFFh
128000h-12FFFFh
39
64/32
240000h-24FFFFh
120000h-127FFFh
38
64/32
230000h-23FFFFh
118000h-11FFFFh
37
64/32
220000h-22FFFFh
110000h-117FFFh
36
64/32
210000h-21FFFFh
108000h-10FFFFh
35
64/32
200000h-20FFFFh
100000h-107FFFh
34
64/32
1F0000h-1FFFFFh
0F8000h-0FBFFFh
33
64/32
1E0000h-1EFFFFh
0F0000h-0F7FFFh
M29W320DT, M29W320DB
Table 20.
Block Addresses
Bottom Boot Block Addresses, M29W320DB (continued)
32
64/32
1D0000h-1DFFFFh
0E8000h-0EFFFFh
31
64/32
1C0000h-1CFFFFh
0E0000h-0E7FFFh
30
64/32
1B0000h-1BFFFFh
0D8000h-0DFFFFh
29
64/32
1A0000h-1AFFFFh
0D0000h-0D7FFFh
28
64/32
190000h-19FFFFh
0C8000h-0CFFFFh
27
64/32
180000h-18FFFFh
0C0000h-0C7FFFh
26
64/32
170000h-17FFFFh
0B8000h-0BFFFFh
25
64/32
160000h-16FFFFh
0B0000h-0B7FFFh
24
64/32
150000h-15FFFFh
0A8000h-0AFFFFh
23
64/32
140000h-14FFFFh
0A0000h-0A7FFFh
22
64/32
130000h-13FFFFh
098000h-09FFFFh
21
64/32
120000h-12FFFFh
090000h-097FFFh
20
64/32
110000h-11FFFFh
088000h-08FFFFh
19
64/32
100000h-10FFFFh
080000h-087FFFh
18
64/32
0F0000h-0FFFFFh
078000h-07FFFFh
17
64/32
0E0000h-0EFFFFh
070000h-077FFFh
16
64/32
0D0000h-0DFFFFh
068000h-06FFFFh
15
64/32
0C0000h-0CFFFFh
060000h-067FFFh
14
64/32
0B0000h-0BFFFFh
058000h-05FFFFh
13
64/32
0A0000h-0AFFFFh
050000h-057FFFh
12
64/32
090000h-09FFFFh
048000h-04FFFFh
11
64/32
080000h-08FFFFh
040000h-047FFFh
10
64/32
070000h-07FFFFh
038000h-03FFFFh
9
64/32
060000h-06FFFFh
030000h-037FFFh
8
64/32
050000h-05FFFFh
028000h-02FFFFh
7
64/32
040000h-04FFFFh
020000h-027FFFh
6
64/32
030000h-03FFFFh
018000h-01FFFFh
5
64/32
020000h-02FFFFh
010000h-017FFFh
4
64/32
010000h-01FFFFh
008000h-00FFFFh
3
32/16
008000h-00FFFFh
004000h-007FFFh
2
8/4
006000h-007FFFh
003000h-003FFFh
1
8/4
004000h-005FFFh
002000h-002FFFh
0
16/8
000000h-003FFFh
000000h-001FFFh
43/56
Common Flash Interface (CFI)
Appendix B
M29W320DT, M29W320DB
Common Flash Interface (CFI)
The Common Flash Interface is a JEDEC approved, standardized data structure that can be
read from the Flash memory device. It allows a system software to query the device to
determine various electrical and timing parameters, density information and functions
supported by the memory. The system can interface easily with the device, enabling the
software to upgrade itself when necessary.
When the CFI Query Command is issued the device enters CFI Query mode and the data
structure is read from the memory. Table 21, Table 22, Table 23, Table 24, Table 25 and
Table 26 show the addresses used to retrieve the data. The CFI data structure also contains
a security area where a 64 bit unique security number is written (see Table 26, Security
Code area). This area can be accessed only in Read mode by the final user. It is impossible
to change the security number after it has been written by Numonyx. Issue a Read
command to return to Read mode.
Query Structure Overview(1)
Table 21.
Address
Sub-section Name
Description
x16
x8
10h
20h
CFI Query Identification String
Command set ID and algorithm data offset
1Bh
36h
System Interface Information
Device timing & voltage information
27h
4Eh
Device Geometry Definition
Flash device layout
40h
80h
Primary Algorithm-specific Extended Query table
Additional information specific to the Primary
Algorithm (optional)
61h
C2h
Security Code Area
64 bit unique device number
1. Query data are always presented on the lowest order data outputs.
CFI Query Identification String(1)
Table 22.
Address
Data
Description
Value
x16
x8
10h
20h
0051h
“Q”
11h
22h
0052h Query Unique ASCII String "QRY"
"R"
12h
24h
0059h
"Y"
13h
26h
14h
28h
0002h Primary Algorithm Command Set and Control Interface ID code 16 bit
AMD Compatible
0000h ID code defining a specific algorithm
15h
2Ah
0040h
16h
2Ch
0000h
17h
2Eh
18h
30h
0000h Alternate Vendor Command Set and Control Interface ID Code
0000h second vendor - specified algorithm supported
19h
32h
0000h
1Ah
34h
0000h
Address for Primary Algorithm extended Query table (see Table 24)
Address for Alternate Algorithm extended Query table
1. Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
44/56
P = 40h
NA
NA
M29W320DT, M29W320DB
Table 23.
Common Flash Interface (CFI)
CFI Query System Interface Information
Address
Data
Description
Value
x16
x8
1Bh
36h
0027h
VCC Logic Supply Minimum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
2.7V
1Ch
38h
0036h
VCC Logic Supply Maximum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
3.6V
1Dh
3Ah
00B5h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
11.5V
12.5V
16µs
1Eh
3Ch
00C5h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
1Fh
3Eh
0004h
Typical timeout per single byte/word program = 2n µs
n
20h
40h
0000h
Typical timeout for minimum size write buffer program = 2 µs
NA
21h
42h
000Ah
Typical timeout per individual block erase = 2n ms
1s
22h
23h
44h
46h
0000h
0005h
Typical timeout for full chip erase =
2n
ms
NA
n
Maximum timeout for byte/word program = 2 times typical
n
512µs
24h
48h
0000h
Maximum timeout for write buffer program = 2 times typical
NA
25h
4Ah
0004h
Maximum timeout per individual block erase = 2n times typical
16s
26h
Table 24.
4Ch
0000h
n
Maximum timeout for chip erase = 2 times typical
NA
Device Geometry Definition
Address
Data
Description
Value
x16
x8
27h
4Eh
0016h
Device Size = 2n in number of bytes
4 MByte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface Code description
x8, x16
Async.
2Ah
2Bh
54h
56h
0000h
0000h
Maximum number of bytes in multi-byte program or page = 2n
NA
2Ch
58h
0004h
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing
contiguous Erase Blocks of the same size.
4
2Dh
2Eh
5Ah
5Ch
0000h
0000h
Region 1 Information
Number of identical size erase block = 0000h+1
1
2Fh
30h
5Eh
60h
0040h
0000h
Region 1 Information
Block size in Region 1 = 0040h * 256 byte
16 Kbyte
45/56
Common Flash Interface (CFI)
Table 24.
M29W320DT, M29W320DB
Device Geometry Definition (continued)
Address
Data
Description
x16
x8
31h
32h
62h
64h
0001h
0000h
Region 2 Information
Number of identical size erase block = 0001h+1
33h
34h
66h
68h
0020h
0000h
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
35h
36h
6Ah
6Ch
0000h
0000h
Region 3 Information
Number of identical size erase block = 0000h+1
37h
38h
6Eh
70h
0080h
0000h
Region 3 Information
Block size in Region 3 = 0080h * 256 byte
39h
3Ah
72h
74h
003Eh
0000h
Region 4 Information
Number of identical-size erase block = 003Eh+1
3Bh
3Ch
76h
78h
0000h
0001h
Region 4 Information
Block size in Region 4 = 0100h * 256 byte
Table 25.
Value
2
8 Kbyte
1
32 Kbyte
63
64 Kbyte
Primary Algorithm-Specific Extended Query Table
Address
Data
Description
Value
x16
x8
40h
80h
0050h
41h
82h
0052h
42h
84h
0049h
43h
86h
0031h
Major version number, ASCII
"1"
44h
88h
0030h
Minor version number, ASCII
"0"
45h
8Ah
0000h
Address Sensitive Unlock (bits 1 to 0)
00 = required, 01= not required
Silicon Revision Number (bits 7 to 2)
Yes
46h
8Ch
0002h
Erase Suspend
00 = not supported, 01 = Read only, 02 = Read and Write
2
47h
8Eh
0001h
Block Protection
00 = not supported, x = number of blocks in per group
1
48h
90h
0001h
Temporary Block Unprotect
00 = not supported, 01 = supported
49h
92h
0004h
Block Protect /Unprotect
04 = M29W400B
4Ah
94h
0000h
Simultaneous Operations, 00 = not supported
No
4Bh
96h
0000h
Burst Mode, 00 = not supported, 01 = supported
No
4Ch
98h
0000h
Page Mode, 00 = not supported, 01 = 4 page word, 02 = 8 page
word
No
46/56
"P"
Primary Algorithm extended Query table unique ASCII string “PRI”
"R"
"I"
Yes
4
M29W320DT, M29W320DB
Table 25.
Common Flash Interface (CFI)
Primary Algorithm-Specific Extended Query Table (continued)
Address
Data
x16
x8
4Dh
9Ah
Description
00B5h
VPP Supply Minimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV
11.5V
12.5V
4Eh
9Ch
00C5h
VPP Supply Minimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV
4Fh
9Eh
000xh
Top/Bottom Boot Block Flag
02h = Bottom Boot device, 03h = Top Boot device
Table 26.
Value
–
Security Code Area
Address
Data
x16
x8
61h
C3h, C2h
XXXX
62h
C5h, C4h
XXXX
63h
C7h, C6h
XXXX
64h
C9h, C8h
XXXX
Description
64 bit: unique device number
47/56
Block Protection
Appendix C
M29W320DT, M29W320DB
Block Protection
Block protection can be used to prevent any operation from modifying the data stored in the
Flash. Each Block can be protected individually. Once protected, Program and Erase
operations on the block fail to change the data.
There are three techniques that can be used to control Block Protection, these are the
Programmer technique, the In-System technique and Temporary Unprotection. Temporary
Unprotection is controlled by the Reset/Block Temporary Unprotection pin, RP; this is
described in the Signal Descriptions section.
Unlike the Command Interface of the Program/Erase Controller, the techniques for
protecting and unprotecting blocks change between different Flash memory suppliers. For
example, the techniques for AMD parts will not work on Numonyx parts. Care should be
taken when changing drivers for one part to work on another.
C.1
Programmer Technique
The Programmer technique uses high (VID) voltage levels on some of the bus pins. These
cannot be achieved using a standard microprocessor bus, therefore the technique is
recommended only for use in Programming Equipment.
To protect a block follow the flowchart in Figure 16: Programmer Equipment Block Protect
Flowchart. To unprotect the whole chip it is necessary to protect all of the blocks first, then
all blocks can be unprotected at the same time. To unprotect the chip follow Figure 17:
Programmer Equipment Chip Unprotect Flowchart. Table 27: Programmer Technique Bus
Operations, BYTE = VIHor VIL, gives a summary of each operation.
The timing on these flowcharts is critical. Care should be taken to ensure that, where a
pause is specified, it is followed as closely as possible. Do not abort the procedure before
reaching the end. Chip Unprotect can take several seconds and a user message should be
provided to show that the operation is progressing.
C.2
In-System Technique
The In-System technique requires a high voltage level on the Reset/Blocks Temporary
Unprotect pin, RP. This can be achieved without violating the maximum ratings of the
components on the microprocessor bus, therefore this technique is suitable for use after the
Flash has been fitted to the system.
To protect a block follow the flowchart in Figure 18: In-System Equipment Block Protect
Flowchart. To unprotect the whole chip it is necessary to protect all of the blocks first, then
all the blocks can be unprotected at the same time. To unprotect the chip follow Figure
Figure 19: In-System Equipment Chip Unprotect Flowchart.
The timing on these flowcharts is critical. Care should be taken to ensure that, where a
pause is specified, it is followed as closely as possible. Do not allow the microprocessor to
service interrupts that will upset the timing and do not abort the procedure before reaching
the end. Chip Unprotect can take several seconds and a user message should be provided
to show that the operation is progressing.
48/56
M29W320DT, M29W320DB
Table 27.
Block Protection
Programmer Technique Bus Operations, BYTE = VIHor VIL
E
G
W
Address Inputs
A0-A20
Data Inputs/Outputs
DQ15A–1, DQ14-DQ0
Block Protect
VIL
VID
VIL Pulse
A9 = VID, A12-A20 Block Address
Others = X
X
Chip Unprotect
VID
VID
VIL Pulse
A9 = VID, A12 = VIH, A15 = VIH
Others = X
X
Block Protection
Verify
VIL
VIL
VIH
A0 = VIL, A1 = VIH, A6 = VIL, A9 = VID,
A12-A20 Block Address
Others = X
Pass = XX01h
Retry = XX00h
Block Unprotection
Verify
VIL
VIL
VIH
A0 = VIL, A1 = VIH, A6 = VIH,
A9 = VID, A12-A20 Block Address
Others = X
Retry = XX01h
Pass = XX00h
Operation
49/56
Block Protection
M29W320DT, M29W320DB
Figure 16. Programmer Equipment Block Protect Flowchart
START
Set-up
ADDRESS = BLOCK ADDRESS
W = VIH
n=0
G, A9 = VID,
E = VIL
Protect
Wait 4µs
W = VIL
Wait 100µs
W = VIH
E, G = VIH,
A0, A6 = VIL,
A1 = VIH
E = VIL
Verify
Wait 4µs
G = VIL
Wait 60ns
Read DATA
DATA
NO
=
01h
YES
A9 = VIH
E, G = VIH
++n
= 25
NO
End
YES
PASS
A9 = VIH
E, G = VIH
FAIL
50/56
AI03469
M29W320DT, M29W320DB
Block Protection
Figure 17. Programmer Equipment Chip Unprotect Flowchart
START
Set-up
PROTECT ALL BLOCKS
n=0
CURRENT BLOCK = 0
A6, A12, A15 = VIH(1)
E, G, A9 = VID
Unprotect
Wait 4µs
W = VIL
Wait 10ms
W = VIH
E, G = VIH
ADDRESS = CURRENT BLOCK ADDRESS
A0 = VIL, A1, A6 = VIH
E = VIL
Wait 4µs
G = VIL
INCREMENT
CURRENT BLOCK
Verify
Wait 60ns
Read DATA
NO
End
NO
++n
= 1000
DATA
=
00h
YES
LAST
BLOCK
YES
YES
A9 = VIH
E, G = VIH
A9 = VIH
E, G = VIH
FAIL
PASS
NO
AI03470
51/56
Block Protection
M29W320DT, M29W320DB
Figure 18. In-System Equipment Block Protect Flowchart
Set-up
START
n=0
RP = VID
Protect
WRITE 60h
ADDRESS = BLOCK ADDRESS
A0 = VIL, A1 = VIH, A6 = VIL
WRITE 60h
ADDRESS = BLOCK ADDRESS
A0 = VIL, A1 = VIH, A6 = VIL
Wait 100µs
Verify
WRITE 40h
ADDRESS = BLOCK ADDRESS
A0 = VIL, A1 = VIH, A6 = VIL
Wait 4µs
READ DATA
ADDRESS = BLOCK ADDRESS
A0 = VIL, A1 = VIH, A6 = VIL
DATA
NO
=
01h
YES
End
RP = VIH
ISSUE READ/RESET
COMMAND
PASS
++n
= 25
NO
YES
RP = VIH
ISSUE READ/RESET
COMMAND
FAIL
AI03471
52/56
M29W320DT, M29W320DB
Block Protection
Figure 19. In-System Equipment Chip Unprotect Flowchart
START
Set-up
PROTECT ALL BLOCKS
n=0
CURRENT BLOCK = 0
RP = VID
WRITE 60h
ANY ADDRESS WITH
A0 = VIL, A1 = VIH, A6 = VIH
Unprotect
WRITE 60h
ANY ADDRESS WITH
A0 = VIL, A1 = VIH, A6 = VIH
Wait 10ms
Verify
WRITE 40h
ADDRESS = CURRENT BLOCK ADDRESS
A0 = VIL, A1 = VIH, A6 = VIH
Wait 4µs
READ DATA
ADDRESS = CURRENT BLOCK ADDRESS
A0 = VIL, A1 = VIH, A6 = VIH
NO
End
NO
++n
= 1000
YES
DATA
=
00h
INCREMENT
CURRENT BLOCK
YES
LAST
BLOCK
NO
YES
RP = VIH
RP = VIH
ISSUE READ/RESET
COMMAND
ISSUE READ/RESET
COMMAND
FAIL
PASS
AI03472
53/56
Revision history
10
M29W320DT, M29W320DB
Revision history
Table 28.
Document revision history
Date
Revision
March-2001
-01
First Issue (Brief Data)
08-Jun-2001
-02
Document expanded to full Product Preview
22-Jun-2001
-03
Minor text corrections to Read/Reset and Read CFI commands and
Status Register Error and Toggle Bits.
-04
Document type: from Product Preview to Preliminary Data
TFBGA connections and Block Addresses (x16) diagrams
clarification
Write Protect and Block Unprotect clarification
CFI Primary Algorithm table, Block Protection change
05-Oct-2001
-05
Added Block Protection Appendix
“Write Protect/VPP” pin renamed to “VPP/Write Protect” to be
consistent with abbreviation. Changes to the VPP/WP pin description,
Figure 13 and Table 15. IPP added to Table 11 and ICC3 clarified.
Modified description of VPP/WP operation in Unlock Bypass
Command section. Added VPP/WP decoupling capacitor to Figure
Figure 1.
Clarified Read/Reset operation during Erase Suspend.
07-Feb-2002
-06
TFBGA package changed from 48 ball to 63 ball
-07
Description of Ready/Busy signal clarified (and Figure 12 modified)
Clarified allowable commands during block erase
Clarified the mode the device returns to in the CFI Read Query
command section
7.1
Erase Suspend Latency Time (typical and maximum) added to
Program, Erase Times and Program, Erase Endurance Cycles table.
Typical values added for Icc1 and Icc2 in DC characteristics table.
Logic Diagram and Data Toggle Flowchart corrected.
Revision numbering modified: a minor revision will be indicated by
incrementing the digit after the dot, and a major revision, by
incrementing the digit before the dot (revision version 07 equals 7.0).
Document promoted to full datasheet.
26-May-2003
7.2
Data Retention added to Table 6: Program, Erase Times and
Program, Erase Endurance Cycles, and Typical after 100k W/E
Cycles column removed. TSOP48 package mechanical updated.
Lead-free package options E and F added to Table 18: Ordering
Information Scheme.
16-Aug-2005
8.0
TFBGA48 package added throughout document.
27-Jul-2001
05-Apr-2002
19-Nov-2002
54/56
Changes
M29W320DT, M29W320DB
Table 28.
Revision history
Document revision history (continued)
Date
Revision
Changes
13-Jun-2006
9
Document title modified.
TFBGA63 package removed. ECOPACK text added.
RB signal updated in Figure 12: Reset/Block Temporary Unprotect
AC Waveforms. tPLYH updated in Table 15: Reset/Block Temporary
Unprotect AC Characteristics.
In Table 7: Status Register Bits, DQ7 changed to DQ7 for Program,
Program during Erase Suspend and Program Error.
26-Mar-2008
10
Applied Numonyx branding.
55/56
M29W320DT, M29W320DB
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