Panasonic DRA9143X0L Silicon pnp epitaxial planar type Datasheet

DRA9143X
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC9143X
DRA5143X in SSMini3 type package
Unit: mm
 Features
 Low collector-emitter saturation voltage VCE(sat)
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
 Marking Symbol: L6
 Packaging
DRA9143X0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
–50
V
Collector-emitter voltage (Base open)
VCEO
–50
V
Collector current
IC
–100
mA
Total power dissipation
PT
125
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
1: Base
2: Emitter
3: Collector
Panasonic
JEITA
Code
B
SSMini3-F3-B
SC-89
SOT-490
C
R1
R2
E
Resistance value
R1
4.7
kΩ
R2
10
kΩ
 Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = –10 µA, IE = 0
–50
V
Collector-emitter voltage (Base open)
VCEO
IC = –2 mA, IB = 0
–50
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = –50 V, IE = 0
– 0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = –50 V, IB = 0
– 0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = –6 V, IC = 0
–1.0
mA
Forward current transfer ratio
hFE
VCE = –10 V, IC = –5 mA
Collector-emitter saturation voltage
VCE(sat)
IC = –10 mA, IB = – 0.5 mA
Input voltage (ON)
VI(on)
VCE = – 0.2 V, IC = –5 mA
Input voltage (OFF)
VI(off)
VCE = –5 V, IC = –100 µA
30

– 0.25
–1.7
V
V
– 0.6
V
Input resistance
R1
–30%
4.7
+30%
kΩ
Resistance ratio
R1 / R2
0.37
0.47
0.57

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2012
Ver. DED
1
DRA9143X
DRA9143X_IC-VCE
DRA9143X_PT-Ta
PT  Ta
−100
125
Collector current IC (mA)
100
75
50
−700 µA
−600 µA
−80
−500 µA
−60
−400 µA
−300 µA
−40
−200 µA
−20
25
0
40
80
120
160
0
200
−100 µA
0
DRA9143X_VCEsat-IC
−8
−10
−10
Output current IO (mA)
IC / IB = 20
Ta = 85°C
−30°C
25°C
−30°C
−10−2
−10
−100
VIN  IO
−100
Ta = 85°C
−10−1
−1
Collector current IC (mA)
DRA9143X_VIN-IO
VO = −5 V
−1
−30°C
50
0
− 0.1
−12
25°C
100
IO  VIN
−1
− 0.01
− 0.1
−6
Ta = 85°C
150
DRA9143X_IO-VIN
VCE(sat)  IC
− 0.1
−4
VCE = −10 V
200
Collector-emitter voltage VCE (V)
Ambient temperature Ta (°C)
−10
−2
Input voltage VIN (V)
Total power dissipation PT (mW)
IB = −800 µA
Forward current transfer ratio hFE
250
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
hFE  IC
−120
150
0
DRA9143X_hFE-IC
IC  VCE
VO = − 0.2 V
−10
25°C
−1
−30°C
Ta = 85°C
25°C
−1
−10
Collector current IC (mA)
−100
−10−3
0
− 0.5
−1.0
Input voltage VIN
Ver. DED
(V)
−1.5
− 0.1
− 0.1
−1
−10
−100
Output current IO (mA)
2
DRA9143X
SSMini3-F3-B
Unit: mm
 Land Pattern (Reference) (Unit: mm)
Ver. DED
3
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semiconductors described in this book
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