DRA9143X Silicon PNP epitaxial planar type For digital circuits Complementary to DRC9143X DRA5143X in SSMini3 type package Unit: mm Features Low collector-emitter saturation voltage VCE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: L6 Packaging DRA9143X0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO –50 V Collector-emitter voltage (Base open) VCEO –50 V Collector current IC –100 mA Total power dissipation PT 125 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C 1: Base 2: Emitter 3: Collector Panasonic JEITA Code B SSMini3-F3-B SC-89 SOT-490 C R1 R2 E Resistance value R1 4.7 kΩ R2 10 kΩ Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = –10 µA, IE = 0 –50 V Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –50 V Collector-base cutoff current (Emitter open) ICBO VCB = –50 V, IE = 0 – 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = –50 V, IB = 0 – 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = –6 V, IC = 0 –1.0 mA Forward current transfer ratio hFE VCE = –10 V, IC = –5 mA Collector-emitter saturation voltage VCE(sat) IC = –10 mA, IB = – 0.5 mA Input voltage (ON) VI(on) VCE = – 0.2 V, IC = –5 mA Input voltage (OFF) VI(off) VCE = –5 V, IC = –100 µA 30 – 0.25 –1.7 V V – 0.6 V Input resistance R1 –30% 4.7 +30% kΩ Resistance ratio R1 / R2 0.37 0.47 0.57 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: November 2012 Ver. DED 1 DRA9143X DRA9143X_IC-VCE DRA9143X_PT-Ta PT Ta −100 125 Collector current IC (mA) 100 75 50 −700 µA −600 µA −80 −500 µA −60 −400 µA −300 µA −40 −200 µA −20 25 0 40 80 120 160 0 200 −100 µA 0 DRA9143X_VCEsat-IC −8 −10 −10 Output current IO (mA) IC / IB = 20 Ta = 85°C −30°C 25°C −30°C −10−2 −10 −100 VIN IO −100 Ta = 85°C −10−1 −1 Collector current IC (mA) DRA9143X_VIN-IO VO = −5 V −1 −30°C 50 0 − 0.1 −12 25°C 100 IO VIN −1 − 0.01 − 0.1 −6 Ta = 85°C 150 DRA9143X_IO-VIN VCE(sat) IC − 0.1 −4 VCE = −10 V 200 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) −10 −2 Input voltage VIN (V) Total power dissipation PT (mW) IB = −800 µA Forward current transfer ratio hFE 250 Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) hFE IC −120 150 0 DRA9143X_hFE-IC IC VCE VO = − 0.2 V −10 25°C −1 −30°C Ta = 85°C 25°C −1 −10 Collector current IC (mA) −100 −10−3 0 − 0.5 −1.0 Input voltage VIN Ver. DED (V) −1.5 − 0.1 − 0.1 −1 −10 −100 Output current IO (mA) 2 DRA9143X SSMini3-F3-B Unit: mm Land Pattern (Reference) (Unit: mm) Ver. DED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. 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