Fairchild H11AA814S 4-pin phototransistor optocoupler Datasheet

H11AA814 Series, H11A617 Series, H11A817 Series
4-Pin Phototransistor Optocouplers
Features
Applications
■ AC input response (H11AA814 only)
H11AA814 Series
■ AC line monitor
■ Unknown polarity DC sensor
■ Telephone line interface
■ Compatible to Pb-free IR reflow soldering
■ Compact 4-pin dual in-line package
■ Current transfer ratio in selected groups:
H11AA814: 20-300%
H11A817:
50-600%
H11AA814A: 50-150%
H11A817A: 80-160%
H11A617A: 40%-80%
H11A817B: 130-260%
H11A617B: 63%-125%
H11A817C: 200-400%
H11A617C: 100%-200% H11A817D: 300-600%
H11A617D: 160%-320%
■ C-UL, UL and VDE approved
■ High input-output isolation voltage of 5000Vrms
■ Minimum BVCEO of 70V guaranteed
tm
H11A617 and H11A817 Series
■ Power supply regulators
■ Digital logic inputs
■ Microprocessor inputs
Description
The H11AA814 consists of two gallium arsenide infrared
emitting diodes, connected in inverse parallel, driving a
silicon phototransistor output in a 4-pin dual in-line
package. The H11A617/817 Series consists of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 4-pin dual in-line package.
Package
Schematics
H11AA814
4
1
ANODE, CATHODE 1
4 COLLECTOR
CATHODE, ANODE 2
3 EMITTER
H11A617 & H11A817
ANODE 1
CATHODE 2
©2005 Fairchild Semiconductor Corporation
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
1
4 COLLECTOR
3 EMITTER
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H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
July 2006
Symbol
Parameter
Device*
Value
Units
Storage Temperature
All
-55 to +150
°C
TOPR
Operating Temperature
All
-55 to +100
°C
TSOL
Lead Solder Temperature
All
260 for 10 sec
°C
Total Device Power Dissipation (-55°C to 50°C)
All
200
mW
814 Series
617, 817 Series
±50
50
mA
617 Series
817 Series
6
6
V
TOTAL DEVICE
TSTG
PD
EMITTER
IF
Continuous Forward Current
VR
Reverse Voltage
PD
LED Power Dissipation (25°C ambient)
No derating up to 100°C
All
70
mW
VCEO
Collector-Emitter Voltage
All
70
V
VECO
Emitter-Collector Voltage
814, 817 Series
617 Series
6
7
V
DETECTOR
IC
Continuous Collector Current
All
50
mA
PD
Detector Power Dissipation (25°C ambient)
Derate above 90°C
All
150
mW
2.9
mW/°C
Electrical Characteristics (TA = 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol Parameter
Test Conditions
Device
Min. Typ.*
Max.
Unit
V
EMITTER
VF
IR
Input Forward Voltage IF = 60mA
617 Series
1.35
1.65
IF = 20mA
817 Series
1.2
1.5
IF = ±20mA
814 Series
1.2
1.5
VR = 6.0V
617 Series
.001
10
VR = 5.0V
817 Series
Reverse Leakage
Current
µA
DETECTOR
BVCEO
Collector-Emitter
Breakdown Voltage
IC = 0.1 mA, IF = 0
ALL
70
100
V
BVECO
Emitter-Collector
Breakdown Voltage
IE = 10 µA, IF = 0
814, 817 Series
6
10
V
617 Series
7
10
Collector-Emitter
Dark Current
VCE = 10V, IF = 0
ICEO
H11AA814/A, 817 Series,
H11A617C/D
H11A617A/B
1
100
nA
50
*Typical values at TA=25°C
2
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
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H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
Absolute Maximum Ratings (TA = 25°C Unless otherwise specified.)
Symbol DC Characteristic
CTR
Current Transfer
Ratio
Test Conditions
Device
IF = ±1mA, VCE =
H11AA814
20
300
%
IF = ±1mA, VCE =
5V(1)
H11AA814A
50
150
%
H11A617A
40
80
%
H11A617B
63
125
%
H11A617C
100
200
%
H11A617D
160
320
%
(IF = 10mA, VCE =
(IF = 5mA, VCE =
5V(1)
5V(1)
IF = 1mA, VCE = 5V(1)
VCE (SAT) Collector-Emitter
Saturation Voltage
Min Typ* Max Unit
5V(1)
IC = 1mA, IF = ±20mA
IC = 2.5mA, IF = 10mA
IC = 1mA, IF = 20mA
H11A817
50
600
%
H11A817A
80
160
%
H11A817B
130
260
%
H11A817C
200
400
%
H11A817D
300
600
H11A617A
13
%
H11A617B
22
%
H11A617C
34
%
H11A617D
56
%
%
814 series
0.2
617 series
0.4
817 series
0.2
V
AC CHARACTERISTIC
tr
tf
Rise Time
Fall Time
IC = 2mA, VCE = 2 V, RL = 100Ω(2)
ALL
4
18
µs
100Ω(2)
ALL
3
18
µs
IC = 2mA, VCE = 2 V, RL =
Isolation Characteristics
Symbol
Characteristic
Test Conditions
Min.
5000
VISO
Input-Output Isolation Voltage
(note 3)
(f = 60Hz, t = 1 min)
(II-O ≤ 2µA)
RISO
Isolation Resistance
(VI-O = 500 VDC)
CISO
Isolation Capacitance
(VI-O = 0, f = 1 MHz)
5x1010
Typ.*
Max.
Units
Vac(rms)
1011
0.6
Ω
1.0
pf
*Typical values at TA = 25°C.
Notes:
1. Current Transfer Ratio (CTR) = IC/IF x 100%.
2. For test circuit setup and waveforms, refer to Figure 13.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
3
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
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H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
Transfer Characteristics (TA = 25°C Unless otherwise specified.)
Fig. 2. Relative Current Transfer Ratio
vs. Ambient Temperature
Fig. 1 Current Transfer Ratio
vs. Forward Current
160
200
VCE = 5V
Ta = 25°C
CURRENT TRANSFER RATIO CTR ( %)
180
H11AA814
140
RELATIVE CURRENT TRANSFER
RATIO (%)
160
140
120
814
100
617
817
80
60
40
20
0
1
2
5
10
20
IF = 1mA
VCE = 5V
120
100
IF = 5mA
VCE = 5V
80
H11AA617 & H11AA817
60
40
20
0
-60
50
-40
FORWARD CURRENT IF (mA)
Fig. 3 Collector-Emitter Saturation Voltage
vs. Ambient Temperature
20
40
60
80
100
Fig. 4 Forward Current vs. Forward Voltage
IF = 20 mA
IC = 1 mA
TA = 100°C
FORWARD CURRENT IF (mA)
0.10
0.08
0.06
0.04
0.02
75°C
50°C
10
25°C
0°C
-30°C
1
-55°C
0.1
0.00
-60
-40
-20
0
20
40
60
80
0.5
100
1.0
1.5
2.0
FORWARD VOLTAGE VF (V)
TA - AMBIENT TEMPERATURE (˚C)
Fig. 6 Collector Current vs. Collector-Emitter Voltage
(H11AA617 and H11AA817)
Fig. 5 Collector Current vs.
Collector-Emitter Voltage (H11AA814)
30
50
Ta = 25°C
I
I F = 30 m A
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
0
100
0.12
VCE (SAT) - COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
-20
AMBIENT TEMPERATURE TA (°C)
40
20mA
Pc (Max)
30
10mA
20
5mA
10
IF = 30mA
Ta = 25°C
20mA
25
Pc(MAX.)
20
15
10 mA
10
5m A
5
1mA
0
0
0
10
20
30
40
50
60
70
80
90
0
100
1
2
3
4
5
6
7
8
9
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
4
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
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H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
Typical Performance Curves
Fig. 7 Collector Dark Current vs Ambient Temperature
Fig. 8 Response Time vs. Load Resistance
500
V
CE
VCE = 2V
= 20V
200
1000
100
RESPONSE TIME (ms)
COLLECTOR DARK CURRENT ICEO (nA)
10000
100
10
1
IC = 2mA
Ta = 25°C
50
tr
20
tf
10
td
5
ts
2
1
0.1
0.5
0.01
-60
-40
-20
0
20
40
60
80
0.2
0.05
100
0.1
AMBIENT TEMPERATURE TA (°C)
0.2
0.5
1
2
5
Fig. 9. Frequency Response (H11AA814)
Fig. 10. Frequency Response (H11AA617 and H11AA817)
VCE = 2V
IC = 2mA
Ta = 25°C
VCE = 2V
IC = 2mA
Ta = 25°C
0
VOLTAGE GAIN AV (dB)
VOLTAGE GAIN AV (dB)
0
100Ω
1kΩ
RL= 10kΩ
10
LOAD RESISTANCE RL (kW)
-10
10
RL=10kΩ
1kΩ
100Ω
20
-20
0.2
0.5
15
2
10
100
0.5
1000
1
2
FREQUENCY f (kHz)
COLLECTOR POWER DISSIPATION PC (mW)
LED POWER DISSIPATION PLED (mW)
100
80
60
40
20
-40
-20
0
20
40
60
10
20
50 100
500
Fig. 12. Collector Power Dissipation
vs. Ambient Temperature
Fig. 11. LED Power Dissipation vs. Ambient Temperature
0
-55
5
FREQUENCY f (kHz)
80
100
120
150
100
50
0
-55
-40
-20
0
20
40
60
80
100
120
AMBIENT TEMPERATURE TA (°C)
AMBIENT TEMPERATURE TA (°C)
5
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
200
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H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
Typical Performance Curves (Continued)
H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
Test Circuit
Figure 13. Test Circuit
Test Circuit for Response Time
Vcc
Input
RD
RL
Input
Output
Output
10%
90%
td
ts
tr
tf
Test Circuit for Frequency Response
Vcc
RL
RD
Output
6
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
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Through Hole
Surface Mount
0.276 (7.00)
0.236 (6.00)
0.200 (5.10)
0.161 (4.10)
0.312 (7.92)
0.288 (7.32)
0.200 (5.10)
0.161 (4.10)
SEATING PLANE
SEATING PLANE
0.312 (7.92)
0.288 (7.32)
0.157 (4.00)
0.118 (3.00)
0.276 (7.00)
0.236 (6.00)
0.157 (4.00)
0.118 (3.00)
0.010 (0.26)
0.130 (3.30)
0.091 (2.30)
0.051 (1.30)
0.043 (1.10)
0.020 (0.51)
TYP
0.412 (10.46)
0.388 (9.86)
0.010 (0.26)
0.150 (3.80)
0.110 (2.80)
0.110 (2.79)
0.090 (2.29)
0.300 (7.62)
typ
0.110 (2.79)
0.090 (2.29)
Lead Coplanarity 0.004 (0.10) MAX
0.024 (0.60)
0.016 (0.40)
0.4” Lead Spacing
SEATING PLANE
0.049 (1.25)
0.030 (0.76)
0.024 (0.60)
0.004 (0.10)
0.200 (5.10)
0.161 (4.10)
Footprint Dimensions (Surface Mount)
0.157 (4.00)
0.118 (3.00)
0.276 (7.00)
0.236 (6.00)
1.3
0.291 (7.40)
0.252 (6.40)
0.130 (3.30)
0.091 (2.30)
9
0.110 (2.80)
0.011 (1.80)
0.150 (3.80)
0.110 (2.80)
0.024 (0.60)
0.016 (0.40)
Footprint Dimensions
(Surface
Mount)
1.5
0.312 (7.92)
0.288 (7.32)
0.010 (0.26)
0.110 (2.79)
0.090 (2.29)
0.42 (10.66)
0.38 (9.66)
2.54
Note:
All dimensions are in inches (millimeters)
7
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
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H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
Package Dimensions
Part Number Example
Description
H11AA814S
Surface Mount Lead Bend
H11AA814SD
Surface Mount; Tape and reel
H11AA814W
0.4" Lead Spacing
H11AA814300
VDE Approved
H11AA814300W
VDE Approved, 0.4" Lead Spacing
H11AA8143S
VDE Approved, Surface Mount
H11AA8143SD
VDE Approved, Surface Mount, Tape & Reel
*To specify the new construction version which needs 260°C max reflow peak temperature rating: add “NF098” to the
end of the part number. The non-NF098 version is rated for 260°C peak reflow temperature only for parts marked with
date code 0550 and later.
Marking Information
4
5
V X ZZ Y
3
814
6
2
1
Definitions
1
Fairchild logo
2
Device number
3
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
One digit year code
5
Two digit work week ranging from ‘01’ to ‘53’
6
Assembly package code
8
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
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H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
Ordering Information
P2
Ø1.55±0.05
P0
1.75±0.1
F
W
B0
A0
P1
0.3±0.05
K0
Note:
All dimensions are in millimeters
Description
Symbol
Dimensions in mm (inches)
Tape wide
W
16 ± 0.3 (.63)
Pitch of sprocket holes
P0
4 ± 0.1 (.15)
Distance of compartment
F
P2
7.5 ± 0.1 (.295)
2 ± 0.1 (.079)
Distance of compartment to compartment
P1
12 ± 0.1 (.472)
Compartment
A0
10.45 ± 0.1 (.411)
B0
5.30 ± 0.1 (.209)
K0
4.25 ± 0.1 (.167)
9
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
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H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
Carrier Tape Specifications
Temperature (°C)
Tp
Tsmax
Ramp-down
Tsmin
25°C
Soldering zon
ts (Preheat)
Time (sec)
Profile Feature
Pb-Sn solder assembly
Lead Free assembly
Preheat condition
(Tsmin-Tsmax / ts)
100°C ~ 150°C
60 ~ 120 sec
150°C ~ 200°C
60 ~120 sec
Melt soldering zone
183°C
60 ~ 120 sec
217°C
30 ~ 90 sec
Peak temperature (Tp)
240 +0/-5°C
260 +0/-5°C
Ramp-down rate
6°C/sec max.
6°C/sec max.
Recommended Wave Soldering condition
Profile Feature
For all solder assembly
Peak temperature (Tp)
Max 260°C for 10 sec
10
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
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H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
Lead Free Recommended IR Reflow Condition
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
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any time without notice to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
11
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
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H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
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