NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034 Operational Amplifiers, High Slew Rate, Low Voltage, Rail-to-Rail Output The NCS2003 family of op amps features high slew rate, low voltage operation with rail−to−rail output drive capability. The 1.8 V operation allows high performance operation in low voltage, low power applications. The fast slew rate and wide unity−gain bandwidth (5 MHz at 1.8 V) make these op amps suited for high speed applications. The low input offset voltage (4 mV max) allows the op amp to be used for current shunt monitoring. Additional features include no output phase reversal with overdriven inputs and ultra low input bias current of 1 pA. The NCS2003 family is the ideal solution for a wide range of applications and products. The single channel NCS2003, dual channel NCS20032, and quad channel NCS20034 are available in a variety of compact and space−saving packages. The NCV prefix denotes that the device is AEC−Q100 Qualified and PPAP Capable. Features • • • • • • • • Unity Gain Bandwidth: 7 MHz at VS = 5 V Fast Slew Rate: 8 V/ms rising, 12.5 V/ms falling at VS = 5 V Rail−to−Rail Output No Output Phase Reversal for Over−Driven Input Signals Low Offset Voltage: 0.5 mV typical Low Input Bias Current: 1 pA typical NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com MARKING DIAGRAMS 5 5 1 ANxYWG G SOT23−5 CASE 483 (NCS/NCV2003) 1 A3M SOT553, 5 LEAD CASE 463B (NCS2003) 8 2K32 AYWG G Micro8] DM SUFFIX CASE 846A 1 8 8 20032 ALYWX G 1 SOIC−8 CASE 751 1 K32 YWW AG G TSSOP−8 T SUFFIX CASE 948S 14 Applications • • • • Current Shunt Monitor Signal Conditioning Active Filter Sensor Buffer 1 SOIC−14 NB CASE 751A 1 A = Assembly Location WL, L = Wafer Lot Y = Year WW, W = Work Week G or G = Pb−Free Package End Products • • • • NCS20034G AWLYWW 14 Motor Control Drives Hard Drives Medical Devices White Goods and Air Conditioners (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering, marking and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 August, 2016 − Rev. 11 1 Publication Order Number: NCS2003/D NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034 Single Channel Configuration NCS2003/A, NCV2003 OUT 1 VSS 2 5 IN+ 1 VSS 2 VDD 5 VDD 4 OUT 3 IN+ − − + + 4 IN− IN− 3 SOT23−5 (TSOP−5) SOT553−5 Quadruple Channel Configuration NCS20034, NCV20034 Dual Channel Configuration NCS20032, NCV20032 OUT 1 1 IN− 1 2 − IN+ 1 3 + VSS 4 OUT 1 1 14 OUT 4 8 VDD IN− 1 2 − − 13 IN− 4 7 OUT 2 IN+ 1 3 + + 12 IN+ 4 − 6 IN− 2 + 5 IN+ 2 11 VSS VDD 4 IN+ 2 5 + + 10 IN+ 3 IN− 2 6 − − OUT 2 7 9 IN− 3 8 OUT 3 Figure 1. Pin Connections ORDERING INFORMATION Configuration Automotive Marking Package Shipping† Single No AN3 SOT23−5 (Pb−Free) 3000 / Tape and Reel NCS2003ASN2T1G No AN4 SOT23−5 (Pb−Free) 3000 / Tape and Reel NCS2003XV53T2G No A3 SOT553−5 (Pb−Free) 4000 /Tape and Reel NCV2003SN2T1G* Yes AN3 SOT23−5 (Pb−Free) 3000 / Tape and Reel No 2K32 Micro8 (Pb−Free) 4000 / Tape and Reel 20032 SOIC−8 (Pb−Free) 2500 / Tape and Reel K32 TSSOP−8 (Pb−Free) 3000 / Tape and Reel 2K32 Micro8 (Pb−Free) 4000 / Tape and Reel 20032 SOIC−8 (Pb−Free) 2500 / Tape and Reel K32 TSSOP−8 (Pb−Free) 3000 / Tape and Reel No NCS20034G SOIC−14 (Pb−Free) 2500 / Tape and Reel Yes NCS20034G SOIC−14 (Pb−Free) 2500 / Tape and Reel Device NCS2003SN2T1G NCS20032DMR2G Dual NCS20032DR2G NCS20032DTBR2G Yes NCV20032DMR2G* NCV20032DR2G* NCV20032DTBR2G* NCS20034DR2G NCV20034DR2G* Quad †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D *NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. www.onsemi.com 2 NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034 ABSOLUTE MAXIMUM RATINGS Over operating free−air temperature, unless otherwise stated Parameter Symbol Limit Unit VS 7.0 V Input Voltage (Note 1) VIN VSS − 0.3 to 7.0 V Input Current IIN 10 mA Output Short Current (Note 2) IO 100 mA Storage Temperature TSTG −65 to 150 °C Junction Temperature TJ 150 °C Supply Voltage (VDD − VSS) INPUT AND OUTPUT PINS TEMPERATURE ESD RATINGS (Note 3) Human Body Model NCx2003, A NCx20032 NCx20034 HBM 3000 2000 3000 V Machine Model NCx2003, A NCx20032 NCx20034 MM 200 100 150 V Charged Device Model NCx2003, A NCx2003x CDM 1000 2000 V MSL Level 1 ILU 100 OTHER PARAMETERS Moisture Sensitivity Level (Note 5) Latch−up Current (Note 4) mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Neither input should exceed the range of VSS − 300 mV to 7.0 V. This device contains internal protection diodes between the input pins and VDD. When VIN exceeds VDD, the input current should be limited to the specified value. 2. Indefinite duration; however, maximum package power dissipation limits must be observed to ensure that the maximum junction temperature is not exceeded. 3. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 and JESD22−A114 ESD Machine Model tested per AEC−Q100−003 and JESD22−A115 ESD Charged Device Model tested per AEC−Q100−011 and ANSI/ESD S5.3.1−2009 4. Latch−up current tested per JEDEC Standard JESD78. 5. Moisture Sensitivity Level tested per IPC/JEDEC standard J−STD−020A. THERMAL INFORMATION Thermal Metric Junction to Ambient Thermal Resistance Symbol qJA Package Single Layer Board (Note 6) Multi Layer Board (Note 7) SOT23−5/TSOP−5 408 355 SOT553−5 428 406 Micro8/MSOP8 235 163 SOIC−8 240 179 TSSOP−8 300 238 SOIC−14 167 123 Unit °C/W 6. Values based on a 1S standard PCB according to JEDEC51−3 with 1.0 oz copper and a 300 mm2 copper area 7. Values based on a 1S2P standard PCB according to JEDEC51−7 with 1.0 oz copper and a 100 mm2 copper area RECOMMENDED OPERATING CONDITIONS Parameter Operating Supply Voltage (VDD − VSS) Specified Operating Range NCS2003, A NCV2003, NCx20032, NCx20034 Input Common Mode Range Symbol Min Max Unit VS 1.7 5.5 V TA −40 −40 +85 +125 °C VCM VSS VDD−0.6 V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 3 NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034 ELECTRICAL CHARACTERISTICS: VS = +1.8 V At TA = +25°C, RL = 10 kW connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted. Boldface limits apply over the specified temperature range. Guaranteed by design and/or characterization. Parameter Symbol Conditions VOS Min Typ Max Unit NCS2003A 0.5 3.0 mV NCx2003, NCx20032, NCx20034 0.5 4.0 mV 5.0 mV INPUT CHARACTERISTICS Input Offset Voltage Offset Voltage Drift DVOS/DT Input Bias Current IIB 1 pA Input Offset Current IOS 1 pA Channel Separation XTLK 100 dB mV/°C 2.0 NCS2003A (Note 8) 6.0 DC, NCx20032, NCx20034 mV/°C Input Resistance RIN 1 TW Input Capacitance CIN 1.2 pF 80 dB 92 dB Common Mode Rejection Ratio CMRR VIN = VSS to VDD – 0.6 V 70 VIN = VSS + 0.2 V to VDD – 0.6 V 65 RL = 10 kW 80 OUTPUT CHARACTERISTICS Open Loop Voltage Gain AVOL 75 RL = 2 kW 92 70 Output Current Capability (Note 8) ISC Output Voltage High VOH Output Voltage Low VOL Sourcing 5 8 Sinking 10 14 RL = 10 kW 1.75 1.798 RL = 2 kW 1.7 1.78 RL = 10 kW mA V NCx2003, A 7 50 NCx2003x 7 100 RL = 2 kW 20 100 mV NOISE PERFORMANCE Voltage Noise Density eN f = 1 kHz 20 nV/√Hz Current Noise Density iN f = 1 kHz 0.1 pA√Hz 5 MHz DYNAMIC PERORMANCE Gain Bandwidth Product GBWP Slew Rate at Unity Gain SR Phase Margin ym Gain Margin Am Settling Time tS Rising Edge, RL = 2 kW, AV = +1 6 Falling Edge, RL = 2 kW, AV = +1 9 RL = 10 kW, CL = 5 pF 53 ° NCx2003, A 12 dB NCx2003x 8 Settling time to 0.1% 1.8 RL = 10 kW, CL = 5 pF VO = 1 Vpp, Gain = 1, CL = 20 pF V/ms ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 8. Guaranteed by design and/or characterization. www.onsemi.com 4 NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034 ELECTRICAL CHARACTERISTICS: VS = +1.8 V At TA = +25°C, RL = 10 kW connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted. Boldface limits apply over the specified temperature range. Guaranteed by design and/or characterization. Parameter Symbol Conditions Min Typ THD+N VO = 1 Vpp, RL = 2 kW, AV = +1, f = 1 kHz 0.005 VO = 1 Vpp, RL = 2 kW, AV = +1, f = 10 kHz 0.025 Max Unit DYNAMIC PERORMANCE Total Harmonics Distortion + Noise % POWER SUPPLY Power Supply Rejection Ratio PSRR NCx2003 72 dB 80 65 NCx20032, NCx20034 Quiescent Current IDD No load, per channel 80 100 NCx2003, A 230 560 mA 1000 NCx20032, NCx20034 275 375 575 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 8. Guaranteed by design and/or characterization. ELECTRICAL CHARACTERISTICS: VS = +5.0 V At TA = +25°C, RL = 10 kW connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted. Boldface limits apply over the specified temperature range. Guaranteed by design and/or characterization. Parameter Symbol Conditions VOS Min Typ Max Unit NCS2003A 0.5 3.0 mV NCx2003 0.5 4.0 mV 5.0 mV INPUT CHARACTERISTICS Input Offset Voltage NCx20032, NCx20034 Offset Voltage Drift DVOS/DT NCS2003A (Note 9) Input Bias Current IIB Input Offset Current IOS Channel Separation XTLK mV/°C 2.0 DC, NCx20032, NCx20034 6.0 mV/°C 1 pA 1 pA 100 dB Input Resistance RIN 1 TW Input Capacitance CIN 1.2 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 9. Guaranteed by design and/or characterization. www.onsemi.com 5 NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034 ELECTRICAL CHARACTERISTICS: VS = +5.0 V At TA = +25°C, RL = 10 kW connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted. Boldface limits apply over the specified temperature range. Guaranteed by design and/or characterization. Parameter Symbol Conditions Min Typ VIN = VSS to VDD – 0.6 V 65 90 VIN = VSS + 0.2 V to VDD – 0.6 V 63 NCx20032, NCx20034 VIN = VSS to VDD – 0.6 V 70 VIN = VSS + 0.2 V to VDD – 0.6 V 65 Max Unit INPUT CHARACTERISTICS Common Mode Rejection Ratio CMRR NCx2003, A dB 90 OUTPUT CHARACTERISTICS Open Loop Voltage Gain AVOL RL = 10 kW 86 dB 92 78 RL = 2 kW 83 92 78 Output Current Capability (Note 9) ISC Output Voltage High VOH Output Voltage Low VOL Sourcing 40 76 Sinking 50 96 RL = 10 kW 4.95 4.99 RL = 2 kW 4.9 4.97 RL = 10 kW NCx2003, A NCx2003x mA V 8 50 8 100 RL = 2 kW 24 100 mV NOISE PERFORMANCE Voltage Noise Density eN f = 1 kHz 20 nV/√Hz Current Noise Density iN f = 1 kHz 0.1 pA√Hz DYNAMIC PERORMANCE Gain Bandwidth Product GBWP Slew Rate at Unity Gain SR Phase Margin ym Gain Margin Am Settling Time tS Total Harmonics Distortion + Noise THD+N 7 MHz Rising Edge, RL = 2 kW, AV = +1 8 V/ms Falling Edge, RL = 2 kW, AV = +1 12.5 RL = 10 kW, CL = 5 pF NCx2003, A 64 NCx2003x 56 ° 9 dB 0.6 ms VO = 4 Vpp, RL = 2 kW, AV = +1, f = 1 kHz 0.002 % VO = 4 Vpp, RL = 2 kW, AV = +1, f = 10 kHz 0.01 RL = 10 kW, CL = 5 pF VO = 1 Vpp, Gain = 1, CL = 20 pF Settling time to 0.1% Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 9. Guaranteed by design and/or characterization. www.onsemi.com 6 NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034 ELECTRICAL CHARACTERISTICS: VS = +5.0 V At TA = +25°C, RL = 10 kW connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted. Boldface limits apply over the specified temperature range. Guaranteed by design and/or characterization. Parameter Symbol Conditions Min Typ PSRR NCx2003, A 72 80 Max Unit POWER SUPPLY Power Supply Rejection Ratio dB 65 NCx20032, NCx20034 Quiescent Current IDD No load, per channel 80 100 NCx2003, A 300 NCx20032, NCx20034 325 660 mA 1000 450 675 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 9. Guaranteed by design and/or characterization. www.onsemi.com 7 NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034 TYPICAL CHARACTERISTICS 600 700 SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) 600 +85°C 500 +125°C 400 +25°C 300 −40°C 200 100 500 400 300 VS = 1.8 V 200 100 No Load No Load 0 1 3 2 4 0 −50 5 −25 0 SUPPLY VOLTAGE (V) 75 100 125 Figure 3. Quiescent Supply Current vs. Temperature 1.8 20 VS = 5 V 18 LOW LEVEL OUTPUT VOLTAGE (V) INPUT OFFSET CURRENT (pA) 50 25 TEMPERATURE (°C) Figure 2. Quiescent Supply Current vs. Supply Voltage 16 14 12 10 8 −40°C +85°C +25°C 6 +125°C 4 2 0 1.6 1.4 1.2 +125°C 1 0.8 +85°C 0.6 −40°C 0.4 +25°C 0.2 VS = 1.8 V 0 0 1 2 3 4 5 0 VCM, COMMON MODE VOLTAGE (V) 5 10 15 20 LOW LEVEL OUTPUT CURRENT (mA) Figure 4. Input Offset Current vs. VCM Figure 5. Low Level Output Voltage vs. Output Current @ VS = 1.8 V 0.5 1.8 VS = 5 V HIGH LEVEL OUTPUT VOLTAGE (V) LOW LEVEL OUTPUT VOLTAGE (V) VS = 5 V VS = 2.7 V 0.4 0.3 +125°C +85°C 0.2 −40°C 0.1 +25°C 0 0 5 10 15 −40°C 1.6 1.4 1.2 +25°C 1 +85°C 0.8 0.6 0.4 +125°C 0.2 0 0 20 VS = 1.8 V −2 −4 −6 −8 −10 LOW LEVEL OUTPUT CURRENT (mA) HIGH LEVEL OUTPUT CURRENT (mA) Figure 6. Low Level Output Voltage vs. Output Current @ VS = 5 V Figure 7. High Level Output Voltage vs. Output Current @ VS = 1.8 V www.onsemi.com 8 NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034 TYPICAL CHARACTERISTICS HIGH LEVEL OUTPUT VOLTAGE (V) 5 140 VS = 5 V −40°C 4.9 100 PSRR (dB) +25°C 4.8 +85°C 4.7 80 60 +125°C 40 4.6 20 −4 −8 −12 −16 VS = 1.8 V VS = 5 V 0 10 −20 100 1k 10k 100k HIGH LEVEL OUTPUT CURRENT (mA) FREQUENCY (Hz) Figure 8. High Level Output Voltage vs. Output Current @ VS = 5 V Figure 9. PSRR vs. Frequency 1M 100 RL = 10 kW TA = 25°C 80 360 80 Gain − 10 kW Gain − 2 kW Phase − 10 kW Phase − 2 kW Gain 60 AVOL (dB) 60 40 240 40 180 Phase 20 100 1k 10k AVOL (dB) −20 10 100 1k 10k 100k 1M 10M FREQUENCY (Hz) Figure 11. Open Loop Gain and Phase vs. Frequency @ VS = 1.8 V Gain − 2 kW Gain − 10 kW Phase − 2 kW Phase − 10 kW Gain 300 120 VS = 5 V CL = 5 pF TA = 25°C 100 60 1k 10k 100k 1M 10M VS = 1.8 V RL = 10 kW TA = 25°C 70 180 Phase 0 100M 80 360 240 20 0 −20 10 60 FREQUENCY (Hz) 60 40 1M VS = 1.8 V CL = 5 pF TA = 25°C Figure 10. CMRR vs. Frequency 100 80 100k PHASE MARGIN (°) 0 10 120 0 VS = 1.8 V VS = 5 V PHASE (°) 20 300 PHASE (°) 4.5 0 100 CMRR (dB) RL = 10 kW TA = 25°C 120 60 50 40 30 20 10 0 0 100M 0 FREQUENCY (Hz) 50 100 150 200 CAPACITIVE LOAD (pF) Figure 12. Open Loop Gain and Phase vs. Frequency @ VS = 5 V Figure 13. Phase Margin vs. Capacitive Load www.onsemi.com 9 NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034 TYPICAL CHARACTERISTICS 120 VOLTAGE (mV) 100 Output Input 120 100 80 60 40 60 40 20 0 0 1800 1600 1400 0 20 40 −20 −20 60 20 40 60 TIME (ms) Figure 14. Inverting Small Signal Transient Response Figure 15. Non−Inverting Small Signal Transient Response 1800 VS = 1.8 V RL = 2 kW TA = 25°C Output Input 1600 1400 VOLTAGE (mV) 1000 800 600 400 1000 800 600 400 200 0 0 0 20 40 −200 −20 60 Output Input VS = 1.8 V RL = 2 kW TA = 25°C 1200 200 −200 −20 0 20 40 60 TIME (ms) TIME (ms) Figure 16. Inverting Large Signal Transient Response Figure 17. Non−Inverting Large Signal Transient Response 100 6 VS = 5 V RL = 2 kW TA = 25°C Output Input 10 4 RL = 2 kW AV = +1 TA = 25°C f = 1 kHz 1 THD+N (%) VOLTAGE (V) 0 TIME (ms) 1200 5 Output Input VS = 1.8 V RL = 2 kW TA = 25°C 80 20 −20 −20 VOLTAGE (mV) 140 VS = 1.8 V RL = 2 kW TA = 25°C VOLTAGE (mV) 140 3 2 1 0.1 VS = 1.8 V 0.01 0.001 0 VS = 5 V −1 −20 0 20 40 0.0001 0.01 60 0.1 1 TIME (ms) OUTPUT VOLTAGE (Vpp) Figure 18. Non−Inverting Large Signal Transient Response Figure 19. THD+N vs. Output Voltage www.onsemi.com 10 10 NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034 TYPICAL CHARACTERISTICS 140 1 THD+N (%) 0.1 VS = 1.8 V 0.01 VS = 5 V 0.001 0.0001 10 100 1k 10k VS = 1.8 V VIN = VS/2 100 TA = 25°C 80 60 40 20 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure 20. THD+N vs. Frequency Figure 21. Input Voltage Noise vs. Frequency 40 10 VS = 1.8 V VIN = VS/2 1 35 0.1 0.01 0.001 30 25 20 15 10 0.0001 0.00001 10 5 TA = 25°C 0 100 1k 10k 100k 11 12 13 14 FREQUENCY (Hz) FALLING EDGE SLEW RATE (V/ms) Figure 22. Noise Density vs. Frequency Figure 23. Falling Edge Slew Rate @ Vs = 5 V 45 CHANNEL SEPARATION (dB) VS = 5 V TA = 25°C 40 NUMBER OF PARTS 120 0 10 100k NUMBER OF PARTS CURRENT NOISE DENSITY (pA/√Hz) VOLTAGE NOISE (nV/√Hz) RL = 2 kW AV = +1 TA = 25°C f = 1 kHz 35 30 25 20 15 10 0 −10 −20 Vs = 1.8 V Vs = 5 V −30 −40 TA = 25°C −50 −60 −70 −80 −90 −100 5 −110 −120 0 7 8 9 10 100 1K 10K 100K RISING EDGE SLEW RATE (V/ms) FREQUENCY (Hz) Figure 24. Rising Edge Slew Rate @ Vs = 5 V Figure 25. Channel Separation www.onsemi.com 11 1M NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034 PACKAGE DIMENSIONS TSOP−5 CASE 483−02 ISSUE K NOTE 5 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. D 5X 0.20 C A B 0.10 T M 2X 0.20 T B 5 1 4 2 S 3 K B DETAIL Z G A A TOP VIEW DIM A B C D G H J K M S DETAIL Z J C 0.05 H SIDE VIEW C SEATING PLANE END VIEW MILLIMETERS MIN MAX 3.00 BSC 1.50 BSC 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 0_ 10 _ 2.50 3.00 SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 12 NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034 PACKAGE DIMENSIONS SOT−553, 5 LEAD CASE 463B ISSUE C D −X− 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 4 1 2 E −Y− 3 b e HE c 5 PL 0.08 (0.003) DIM A b c D E e L HE M X Y MILLIMETERS NOM MAX 0.55 0.60 0.22 0.27 0.13 0.18 1.60 1.65 1.20 1.25 0.50 BSC 0.10 0.20 0.30 1.55 1.60 1.65 MIN 0.50 0.17 0.08 1.55 1.15 RECOMMENDED SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 13 INCHES NOM 0.022 0.009 0.005 0.063 0.047 0.020 BSC 0.004 0.008 0.061 0.063 MIN 0.020 0.007 0.003 0.061 0.045 MAX 0.024 0.011 0.007 0.065 0.049 0.012 0.065 NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034 PACKAGE DIMENSIONS Micro8t CASE 846A−02 ISSUE J D HE PIN 1 ID NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. 846A-01 OBSOLETE, NEW STANDARD 846A-02. E b 8 PL 0.08 (0.003) −T− DIM A A1 b c D E e L HE e M T B S A S SEATING PLANE A 0.038 (0.0015) A1 MILLIMETERS NOM MAX −− 1.10 0.08 0.15 0.33 0.40 0.18 0.23 3.00 3.10 3.00 3.10 0.65 BSC 0.40 0.55 0.70 4.75 4.90 5.05 MIN −− 0.05 0.25 0.13 2.90 2.90 L c RECOMMENDED SOLDERING FOOTPRINT* 8X 8X 0.48 0.80 5.25 0.65 PITCH DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 14 INCHES NOM −− 0.003 0.013 0.007 0.118 0.118 0.026 BSC 0.016 0.021 0.187 0.193 MIN −− 0.002 0.010 0.005 0.114 0.114 MAX 0.043 0.006 0.016 0.009 0.122 0.122 0.028 0.199 NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. −X− A 8 5 S B 0.25 (0.010) M Y M 1 4 K −Y− G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X S J SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 15 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034 PACKAGE DIMENSIONS TSSOP−8 CASE 948S ISSUE C 8x 0.20 (0.008) T U K REF 0.10 (0.004) S 2X L/2 8 B −U− 1 PIN 1 IDENT S T U S 5 L 0.20 (0.008) T U M J J1 4 V ÇÇÇÇ ÉÉÉÉ ÉÉÉÉ ÇÇÇÇ ÉÉÉÉ K1 K A −V− SECTION N−N −W− C 0.076 (0.003) D −T− SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 6. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. S DETAIL E G 0.25 (0.010) N M N F DETAIL E www.onsemi.com 16 DIM A B C D F G J J1 K K1 L M MILLIMETERS MIN MAX 2.90 3.10 4.30 4.50 --1.10 0.05 0.15 0.50 0.70 0.65 BSC 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.114 0.122 0.169 0.177 --0.043 0.002 0.006 0.020 0.028 0.026 BSC 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034 PACKAGE DIMENSIONS SOIC−14 NB CASE 751A−03 ISSUE K D A B 14 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 8 A3 E H L 1 0.25 M DETAIL A 7 B 13X M DIM A A1 A3 b D E e H h L M b 0.25 M C A S B S X 45 _ M A1 e DETAIL A h A C SEATING PLANE MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.19 0.25 0.35 0.49 8.55 8.75 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ INCHES MIN MAX 0.054 0.068 0.004 0.010 0.008 0.010 0.014 0.019 0.337 0.344 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.019 0.016 0.049 0_ 7_ SOLDERING FOOTPRINT* 6.50 14X 1.18 1 1.27 PITCH 14X 0.58 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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