TIGER ELECTRONIC CO.,LTD TO-220F Plastic-Encapsulate Diodes MBRF20100CT, 150CT, 200CT TO-220F SCHOTTKY BARRIER RECTIFIER 1. ANODE FEATURES Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications 2. CATHODE 3. ANODE MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Value Parameter VRRM Peak repetitive reverse voltage VRWM Working peak reverse voltage VR DC blocking voltage VR(RMS) RMS reverse voltage Unit MBRF20100CT MBRF20150CT MBRF20200CT 100 150 200 V 70 105 140 V Average rectified output current 20 A 150 A Power dissipation 2 W Thermal resistance from junction to ambient 50 ℃/W Tj Junction temperature 125 ℃ Tstg Storage temperature -55~+150 ℃ IO Non-Repetitive peak forward surge current IFSM 8.3ms half sine wave PD RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Device Test conditions MBRF20100CT Reverse voltage V(BR) MBRF20150CT IR Typ IR=1mA VF 200 MBRF20100CT VR=100V 0.15 MBRF20150CT VR=150V 0.1 MBRF20200CT VR=200V 0.1 MBRF20150CT Ctot MBRF20100CT- 20200CT mA 0.85 IF=10A 0.9 MBRF20200CT Typical total capacitance Unit V 150 MBRF20100CT Forward voltage Max 100 MBRF20200CT Reverse current Min V 0.9 VR=5V,f=1MHz 1000 pF B,Apr,2012 Typical Characteristics Forward 20 Characteristics MBRF20100CT Reverse 100 Characteristics 10 (uA) 10 T= a 2 5℃ FORWARD CURRENT 1 REVERSE CURRENT IR T a IF =1 00 ℃ (A) Ta=100℃ 0.1 0.01 0.0 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 VF 0.1 1.0 0 20 (V) 40 60 REVERSE VOLTAGE Capacitance Characteristics Per Diode 800 Ta=25℃ 1 80 VR 100 (V) Power Derating Curve 2.5 Ta=25℃ f=1MHz (W) 2.0 PD POWER DISSIPATION JUNCTION CAPACITANCE CJ (pF) 600 400 200 1.5 1.0 0.5 0 0 5 10 REVERSE VOLTAGE 15 VR (V) 20 0.0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) B,Apr,2012