MOSFET SMD Type P-Channel MOSFET AO3407A-HF (KO3407A-HF) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ● ID =-4.3 A (VGS =-10V) 1 ● RDS(ON) ＜ 48mΩ (VGS =-10V) 0.55 ● VDS (V) =-30V +0.1 1.3 -0.1 +0.1 2.4 -0.1 0.4 3 ■ Features 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 ● RDS(ON) ＜ 78mΩ (VGS =-4.5V) +0.05 0.1 -0.01 ● Pb−Free Package May be Available. The G−Suffix Denotes a 0-0.1 D +0.1 0.38 -0.1 Pb−Free Lead Finish 1. Gate 2. Source 3. Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead ID IDM TA=25°C TA=70°C t ≤ 10s Steady-State PD RthJA RthJL Unit V -4.3 -3.5 A -25 1.4 0.9 W 90 125 ℃/W 80 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET AO3407A-HF (KO3407A-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS VDS=0V, VGS=±20V VGS(th) VDS=VGS ID=-250μA Gate Threshold Voltage Min Typ -30 ID=-250μA, VGS=0V RDS(On) VDS=-30V, VGS=0V -1 VDS=-30V, VGS=0V, TJ=55℃ -5 VGS=-10V, ID=-4.3A -1.4 ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) VGS=-10V, VDS=-5V VGS=0V, VDS=-15V, f=1MHz pF 100 VGS=-10V, VDS=-15V, ID=-4.3A 3.5 11.5 9.2 11 4.6 6 1.6 Turn-On DelayTime td(on) 7.5 Turn-On Rise Time tr Turn-Off DelayTime td(off) VGS=-10V, VDS=-15V, RL=3.5Ω, RGEN=3Ω tf 7 trr 11 Body Diode Reverse Recovery Charge Qrr IS IS=-1A,VGS=0V nC ns 19 Body Diode Reverse Recovery Time IF=-4.3A, dI/dt=100A/μs Ω 5.5 Turn-Off Fall Time www.kexin.com.cn S 65 VGS=0V, VDS=0V, f=1MHz * The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. 2 10 2.2 X7** F mΩ 520 Qgd Marking V A Gate Drain Charge ■ Marking -2.4 -25 VDS=-5V, ID=-4.3A Qg VSD nA 78 Qgs Diode Forward Voltage ±100 68 TJ=125℃ Gate Source Charge Maximum Body-Diode Continuous Current uA 48 VGS=-4.5V, ID=-3A On state drain current Unit V VGS=-10V, ID=-4.3A Static Drain-Source On-Resistance Max 5.3 nC -2 A -1 V MOSFET SMD Type P-Channel MOSFET AO3407A-HF (KO3407A-HF) ■ Typical Characterisitics 30 30 -6V -10V -4.5V -ID (A) 20 20 15 -4V 10 5 15 10 125°C 25°C 5 VGS=-3.5V 0 0 0 1 2 3 4 0.5 5 1.5 2.5 3.5 4.5 5.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 80 1.8 Normalized On-Resistance 70 VGS=-4.5V 60 RDS(ON) (mΩ Ω) VDS=-5V 25 -ID(A) 25 50 40 30 VGS=-10V 20 VGS=-10V ID=-4.3A 1.6 1.4 1.2 VGS=-4.5V ID=-3A 1 0.8 10 0 2 0 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 120 ID=-4.3A 1.0E+01 100 80 125°C 60 -IS (A) RDS(ON) (mΩ Ω) 1.0E+00 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 40 25°C 1.0E-04 1.0E-05 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET AO3407A-HF (KO3407A-HF) ■ Typical Characterisitics 10 800 VDS=-15V ID=-4.3A Ciss 600 Capacitance (pF) -VGS (Volts) 8 6 4 400 Coss 200 2 0 Crss 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 10 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 40 100.0 TA=25°C 10µs RDS(ON) limited 100µs 1ms 1.0 10ms 10ms 0.1 DC 0.0 0.1 1 VDS (Volts) . 10 0 100 0.0001 1 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 1 20 10 10s TJ(Max)=150°C TA=25°C 0.01 30 Power (W) ID (Amps) 10.0 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=125°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 PD 0.01 0.1 1 Ton T T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4 www.kexin.com.cn 100 1000