Formosa MS Driver Transistor FMBTA55 / FMBTA56 List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings.............................................................................. 2 Electrical Characteristics.................................................................. 3 Rating and characteristic curves........................................................ 4,5 Pinning information........................................................................... 6 Marking........................................................................................... 6 Suggested solder pad layout............................................................. 6 Packing information.......................................................................... 7 Reel packing.................................................................................... 8 Suggested thermal profiles for soldering processes............................. 8 High reliability test capabilities........................................................... 9 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date DS-231164 2010/11/05 Revised Date 2011/07/21 Revision B Page. 9 Formosa MS Driver Transistor FMBTA55 / FMBTA56 Driver PNP Transistor Package outline .084(2.10) .068(1.70) 0.110 (2.80) 0.120 (3.04) Mechanical data (B) 0.012 (0.30) standards of MIL-STD-19500 /228 • Suffix "-H" indicates Halogen-free part, ex. FMBTA55-H. 0.020 (0.50) 0.045 (1.15) • Lead-free parts for green partner, exceeds environmental 0.034 (0.85) SOT-23 Features (C) (A) 0.063 (1.60) 0.027 (0.67) 0.013 (0.32) 0.047 (1.20) 0.108 (2.75) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-23 • Terminals : Solder plated, solderable per 0.051 (1.30) 0.003 (0.09) 0.007 (0.18) 0.083 (2.10) 0.035 (0.89) MIL-STD-750, Method 2026 • Mounting Position : Any • Weight : Approximated 0.008 gram Dimensions in inches and (millimeters) Maximum ratings (AT T =25 C unless otherwise noted) o A PARAMETER SYMBOL FMBTA55 FMBTA56 Collector-Base voltage V CBO -60 -80 UNIT Vdc Collector-Emitter voltage V CEO -60 -80 Vdc Emitter-Base voltage V EBO -4.0 Vdc Collector Current - continuous IC -500 mAdc Thermal Characteristics CHARACTERISTIC CONDITIONS SYMBOL Max Total device dissipation FR-5 board T A = 25 C (1) Derate above 25 OC PD 225 mW PD 1.8 mW/ OC Thermal resistance R θJA 556 PD 300 mW mW/ OC O Junction to ambient O Total device dissipation alumina substrate(2) T A = 25 C Derate above 25 C PD 2.4 Thermal resistance Junction to ambient R θJA 417 O Operating temperature Storage temperature UNIT O O TJ -55 ~ +150 T STG -65 ~ +150 C/W C/W o 1. FR-5 = 1.0 X 0.75 X0.062 in. 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 2 Document ID Issued Date DS-231164 2010/11/05 Revised Date 2011/07/21 Revision B Page. 9 C Formosa MS Driver Transistor FMBTA55 / FMBTA56 Electrical Characteristics (AT T =25 C unless otherwise noted) o A Off Characteristics PARAMETER CONDITIONS Collector-Base breakdown voltage I c = -100µAdc, I E = 0 FMBTA55 FMBTA56 Collector-Emitter breakdown voltage(3) I c = -1.0mAdc, I B = 0 FMBTA55 FMBTA56 Emitter-Base breakdown voltage I E = -100µAdc, I C = 0 SYMBOL Min. Max. UNIT V (BR)CBO -60 -80 - Vdc V (BR)CEO -60 -80 - Vdc V (BR)EBO -4.0 - Vdc Collector Cutoff Current V CE=-60Vdc, IB=0 I CES - -0.1 µAdc Collector Cutoff current FMBTA55 FMBTA56 V CB = -60Vdc, I E = 0 V CB = -80Vdc, I E = 0 I CBO - -0.1 -0.1 µAdc On Characteristics PARAMETER DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage CONDITIONS SYMBOL Min. Max. 100 - 100 - UNIT I c = -10mAdc, V CE = -1.0Vdc I c = -100mAdc, V CE = -1.0Vdc h FE I c = -100mAdc, I B = -10mAdc V CE(sat) - -0.25 Vdc I c = -100mAdc, V CE = -1.0Vdc V BE(on) - -1.2 Vdc SYMBOL Min. Max. UNIT fT 50 - Small Signal Characteristics PARAMETER Current Gain Bandwidth Product (4) CONDITIONS I c = -100mA, V CE = -1.0Vdc, f=100MHz MHz - 3. Pulse test: pulse width <=300µs, duty cycle<=2.0% 4. f T is defined as the frequency at which |h fe | extrapolates to unity. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 3 Document ID Issued Date DS-231164 2010/11/05 Revised Date 2011/07/21 Revision B Page. 9 Rating and characteristic curves (FMBTA55/FMBTA56) FIG.1 Switching Time Test Circuits TURN-OFF TIME TURN-ON TIME *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities FIG.3 Capacitance FIG.2 Current-Gain Bandwidth Product FIG.4 Switching Time FIG.5 DC Current Gain =-40V http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 4 Document ID Issued Date DS-231164 2010/11/05 Revised Date 2011/07/21 Revision B Page. 9 Rating and characteristic curves (FMBTA55/FMBTA56) FIG.6 "On" Voltage FIG.7 Collectpr Saturation Region FIG.8 Base-Emitter Temperature Coefficient RθVΒ RθVΒ http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date DS-231164 2010/11/05 Revised Date 2011/07/21 Revision B Page. 9 Formosa MS Driver Transistor FMBTA55 / FMBTA56 Pinning information Pin Simplified outline Symbol C PinB PinC PinE C Base Collector Emitter B E B E Marking Type number Marking code FMBTA55 FMBTA56 2H 2GM Suggested solder pad layout SOT-23 0.037(0.95) 0.037(0.95) 0.079(2.0) 0.035(0.90) 0.031(0.80) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date DS-231164 2010/11/05 Revised Date 2011/07/21 Revision B Page. 9 Formosa MS Driver Transistor FMBTA55 / FMBTA56 Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOT-23 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.15 2.77 1.22 1.50 178.00 55.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 12.0 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 7 Document ID Issued Date DS-231164 2010/11/05 Revised Date 2011/07/21 Revision B Page. 9 Formosa MS Driver Transistor FMBTA55 / FMBTA56 Reel packing PACKAGE REEL SIZE SOT-23 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) 3,000 4.0 30,000 REEL DIA, (m/m) INNER BOX (m/m) 183*183*123 CARTON SIZE (m/m) 178 382*262*387 CARTON (pcs) APPROX. GROSS WEIGHT (kg) 11.6 240,000 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 150 oC 200 oC 60~120sec Tsmax to T L -Ramp-upRate <3 oC/sec Time maintained above: -Temperature(T L ) -Time(t L ) 217 oC 60~260sec 255 oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 oC/sec Time 25 oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 8 Document ID Issued Date DS-231164 2010/11/05 Revised Date 2011/07/21 Revision B Page. 9 Formosa MS Driver Transistor FMBTA55 / FMBTA56 High reliability test capabilities Item Test Conditions 1. Steady State Operating Life TA=25°C P D=225mW Test Duration:1000hrs 2. High Temperature Reverse Bias Tj= 150℃,V CE=80% related volage, Test Duration: 1000hrs 3. Temperature Cycle 4. Autoclave -55℃( 15min) to 150℃( 15min)Air to Air Transition Time< 20sec Test Cycles:1000cycle P=2atm Ta=121℃ RH=100% Test Duration:96hrs 5. High Temperature Storage Life Ta=150℃ Test Duration:1000hrs 6. Solderability 245℃,Test Duration:5sec 7. High Temperature High Humidity Reverse Bias Ta=85℃, 85%RH, V CE= 80% related volage,Test Duration: 1000hrs 8. Resistance to Soldering Heat 260℃, Test Duration: 10sec http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 9 Document ID Issued Date DS-231164 2010/11/05 Revised Date 2011/07/21 Revision B Page. 9