H7N0308CF Silicon N Channel MOS FET High Speed Power Switching REJ03G1123-0300 (Previous: ADE-208-1570A) Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM) D 1. Gate 2. Drain 3. Source G 1 2 Rev.3.00 Sep 07, 2005 page 1 of 3 3 S H7N0308CF Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS Value 30 Unit V VGSS ID ±20 60 V A 240 60 A A Pch θ ch-c 30 4.17 W °C/W Channel to ambient thermal impedance Channel temperature θ ch-a Tch 62.5 150 °C/W °C Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Tstg –55 to +150 °C Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current ID (pulse) IDR Note 1 Note 2 Channel dissipation Channel to case thermal impedance Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V (BR) DSS Min 30 Typ — Max — Unit V Test Conditions ID = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current V (BR) GSS IGSS ±20 — — — — ±10 V µA IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 IDSS — 1.0 — — 10 2.5 µA V VDS = 30 V, VGS = 0 Note 3 ID = 1 mA, VDS = 10 V Zero gate voltage drain current Gate to source cutoff voltage VGS (off) Static drain to source on state resistance RDS (on) — — 3.8 6.0 4.8 8.5 mΩ mΩ ID = 30 A, VGS = 10 V Note 3 ID = 30 A, VGS = 4.5 V Forward transfer admittance Input capacitance |yfs| Ciss 42 — 70 3350 — — S pF Output capacitance Reverse transfer capacitance Coss Crss — — 840 480 — — pF pF ID = 30 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz Total gate charge Gate to source charge Qg Qgs — — 52 11 — — nC nC Gate to drain charge Turn-on delay time Qgd td (on) — — 10 30 — — nC ns Rise time Turn-off delay time tr td (off) — — 370 80 — — ns ns Fall time Body-drain diode forward voltage tf VDF — — 27 0.90 — — ns V trr — 55 — ns Body-drain diode reverse recovery time Note: 3. Pulse test Rev.3.00 Sep 07, 2005 page 2 of 3 Note 3 VDD = 10 V VGS = 10 V ID = 60 A VGS = 10 V, ID = 30 A RL = 0.33 Ω Rg = 4.7 Ω IF = 60 A, VGS = 0 IF = 60 A, VGS = 0 diF/dt = 50 A/µs Note 3 H7N0308CF Package Dimensions RENESAS Code Package Name MASS[Typ.] PRSS0003AE-A TO-220CFM / TO-220CFMV 1.9g 0.6 ± 0.1 2.54 4.1 ± 0.3 1.0 ± 0.2 1.15 ± 0.2 φ 3.2 ± 0.2 12.0 ± 0.3 10.0 ± 0.3 2.54 Unit: mm 4.5 ± 0.3 2.7 ± 0.2 15.0 ± 0.3 2.5 ± 0.2 13.6 ± 1.0 JEITA Package Code 0.7 ± 0.1 Ordering Information Part Name Quantity Shipping Container H7N0308CF-E 50 pcs Plastic magazine Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Sep 07, 2005 page 3 of 3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. 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