ON C122F1G Silicon controlled rectifiers reverse blocking thyristor Datasheet

C122F1, C122B1
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for full-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half−wave silicon gate−controlled, solid−state devices are needed.
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Features
SCRs
8 AMPERES RMS
50 thru 200 VOLTS
• Glass Passivated Junctions and Center Gate Fire for Greater
•
•
•
Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 200 Volts
Pb−Free Packages are Available*
G
A
K
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Peak Repetitive Off−State Voltage
(Note 1) (TJ = 25 to 100°C, Sine Wave,
50 to 60 Hz; Gate Open)
C122F1
C122B1
VDRM,
VRRM
On-State RMS Current
(180° Conduction Angles; TC = 75°C)
IT(RMS)
8.0
A
ITSM
90
A
I2t
34
A2s
PGM
5.0
W
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width = 10 ms, TC = 70°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
−40 to +125
°C
1
Cathode
Storage Temperature Range
Tstg
−40 to +150
°C
2
Anode
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
TC = 75°C)
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width = 10 ms, TC = 70°C)
Forward Average Gate Power
(t = 8.3 ms, TC = 70°C)
Value
MARKING
DIAGRAM
Rating
Unit
V
4
50
200
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
August, 2005 − Rev. 3
2
3
A
Y
W
C122F1
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
PIN ASSIGNMENT
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
© Semiconductor Components Industries, LLC, 2005
1
A YW
C122F1G
AKA
TO−220AB
CASE 221A
STYLE 3
1
3
Gate
4
Anode
ORDERING INFORMATION
Device
Package
Shipping
C122F1
TO220AB
500 Units / Box
C122F1G
TO220AB
(Pb−Free)
500 Units / Box
C122B1
TO220AB
500 Units / Box
C122B1G
TO220AB
(Pb−Free)
500 Units / Box
Publication Order Number:
C122F1/D
C122F1, C122B1
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristic
RqJC
1.8
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
°C/W
TL
260
°C
Min
Typ
Max
Unit
−
−
−
−
10
0.5
mA
mA
−
−
1.83
V
−
−
−
−
25
40
−
−
−
−
1.5
2.0
0.2
−
−
−
−
−
−
30
60
Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
IDRM, IRRM
TC = 25°C
TC = 125°C
ON CHARACTERISTICS
Peak On−State Voltage (Note 2)
(ITM = 16 A Peak, TC = 25°C)
Gate Trigger Current (Continuous dc)
(VAK = 12 V, RL = 100 W)
Gate Trigger Voltage (Continuous dc)
(VAK = 12 V, RL = 100 W)
VTM
IGT
TC = 25°C
TC = −40°C
mA
VGT
TC = 25°C
TC = −40°C
Gate Non−Trigger Voltage (Continuous dc)
(VAK = 12 V, RL = 100 W, TC = 125°C)
VGD
V
V
Holding Current
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = 25°C
TC = −40°C
IH
mA
Turn-Off Time (VD = Rated VDRM)
(ITM = 8 A, IR = 8 A)
tq
−
50
−
ms
dv/dt
−
50
−
V/ms
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of Off−State Voltage
(VAK = Rated VDRM, Exponential Waveform, Gate Open, TC = 100°C)
2. Pulse Test: Pulse Width ≤ 1 ms, Duty Cycle ≤ 2%.
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2
C122F1, C122B1
Voltage Current Characteristic of SCR
+ Current
Anode +
VTM
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On State Voltage
IH
Holding Current
on state
IH
IRRM at VRRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE °( C)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE °( C)
Anode −
100
100
90
80
DC
CONDUCTION
ANGLE = 30°
70
60° 90°
120°
180°
0
360
CONDUCTION
ANGLE
60
0
1
2
3
4
5
6
7
8
IT(AV), AVERAGE ON−STATE FORWARD CURRENT (AMPERES)
CONDUCTION CONDUCTION
ANGLE
ANGLE
95
0
90
85
80
CONDUCTION
ANGLE = 60°
75
70
0
240°
14
1
2
3
4
5
10
RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz
12
DC
10
180°
8
CONDUCTION
ANGLE 30°
6
60°
90°
120°
4
2
0
1
2
3
4
5
6
7
360°
6
7
8
Figure 2. Current Derating (Full−Wave)
TC , AVERAGE ON−STATE POWER DISSIPATION (WATTS)
P(AV), AVERAGE ON−STATE POWER DISSIPATION (WATTS)
180°
IT(AV), AVERAGE ON−STATE CURRENT (AMPERES)
Figure 1. Current Derating (Half−Wave)
0
120°
RESISTIVE OR
INDUCTIVE LOAD.
50 TO 400 Hz
65
60
360
ONE CYCLE OF SUPPLY
FREQUENCY
8
360°
240°
180°
8
120°
CONDUCTION
ANGLE = 60°
6
CONDUCTION CONDUCTION
ANGLE
ANGLE
4
0
360
2
0
ONE CYCLE OF SUPPLY
FREQUENCY
RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz
0
1
2
3
4
5
6
7
IT(AV), AVERAGE ON−STATE CURRENT (AMPERES)
IT(AV), AVERAGE ON−STATE CURRENT (AMPERES)
Figure 3. Maximum Power Dissipation
(Half−Wave)
Figure 4. Maximum Power Dissipation
(Full−Wave)
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3
8
C122F1, C122B1
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−07
ISSUE AA
−T−
B
F
T
SEATING
PLANE
C
S
4
Q
A
1 2 3
U
H
K
Z
R
L
V
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−− 0.080
STYLE 3:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
CATHODE
ANODE
GATE
ANODE
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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C122F1/D
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