AOT42S60/AOB42S60 600V 37A α MOS TM Power Transistor General Description Product Summary The AOT42S60 & AOB42S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these devices can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 700V IDM 166A RDS(ON),max 0.109Ω Qg,typ 40nC Eoss @ 400V 9.2µJ 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT42S60L & AOB42S60L Top View TO-263 D2PAK TO-220 G D D S G S S G AOT42S60 AOB42S60 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter AOT42S60/AOB42S60 VDS Drain-Source Voltage 600 Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ±30 Units V V 37 ID 23 A Pulsed Drain Current C IDM Avalanche Current C IAR 11 A Repetitive avalanche energy C EAR 234 mJ Single pulsed avalanche energy G EAS 1345 mJ TC=25°C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range 166 PD dv/dt TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RθJA Maximum Case-to-sink A Maximum Junction-to-Case Rev3: Nov 2012 RθCS RθJC www.aosmd.com 417 W 3.3 100 20 -55 to 150 W/ oC 300 °C AOT42S60/AOB42S60 Units 65 °C/W 0.5 0.3 °C/W °C/W V/ns °C Page 1 of 6 AOT42S60/AOB42S60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units ID=250µA, VGS=0V, TJ=25°C 600 - - ID=250µA, VGS=0V, TJ=150°C 650 700 - V µA STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V - - 1 VDS=480V, TJ=150°C - 10 - IGSS Gate-Body leakage current VDS=0V, VGS=±30V - - ±100 VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA 2.5 3.2 3.8 nΑ V RDS(ON) Static Drain-Source On-Resistance VSD Diode Forward Voltage IS ISM VGS=10V, ID=21A, TJ=25°C - 0.095 0.109 Ω VGS=10V, ID=21A, TJ=150°C - 0.27 0.31 Ω IS=21A,VGS=0V, TJ=25°C - 0.84 - V Maximum Body-Diode Continuous Current - - 37 A Maximum Body-Diode Pulsed Current - - 166 A - 2154 - pF - 135 - pF - 103 - pF - 344 - pF VGS=0V, VDS=100V, f=1MHz - 2.7 - pF VGS=0V, VDS=0V, f=1MHz - 1.7 - Ω DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Co(tr) VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg - 40 - nC - 11.7 - nC Gate Drain Charge - 11.9 - nC Turn-On DelayTime - 38.5 - ns - 53 - ns - 136 - ns - 46 - ns Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time VGS=10V, VDS=480V, ID=21A VGS=10V, VDS=400V, ID=21A, RG=25Ω Body Diode Reverse Recovery Time Peak Reverse Recovery Current IF=21A,dI/dt=100A/µs,VDS=400V - 473 - ns Irm IF=21A,dI/dt=100A/µs,VDS=400V - 38.5 - Qrr Body Diode Reverse Recovery Charge IF=21A,dI/dt=100A/µs,VDS=400V - 10.5 - A µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. L=60mH, IAS=6.7A, VDD=150V, Starting TJ=25°C H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. Wavesoldering only allowed at leads. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev3: Nov 2012 www.aosmd.com Page 2 of 6 AOT42S60/AOB42S60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 80 10V 10V 70 7V 50 60 6V ID (A) ID (A) 50 40 5.5V 30 5V 10 5V VGS=4.5V 10 5.5V 30 20 20 VGS=4.5V 0 0 0 5 10 15 0 20 5 10 15 20 VDS (Volts) Figure 2: On-Region Characteristics@125°C VDS (Volts) Figure 1: On-Region Characteristics@25°C 1000 0.30 -55°C VDS=20V 0.25 100 125°C RDS(ON) (Ω ) 0.20 ID(A) 10 1 25°C 0.1 VGS=10V 0.15 0.10 0.05 0.00 0.01 2 3 4 5 6 7 8 9 0 10 VGS(Volts) Figure 3: Transfer Characteristics 15 30 45 60 75 90 ID (A) Figure 4: On-Resistance vs. Drain Current and Gate Voltage 1.2 3 2.5 VGS=10V ID=21A 2 BVDSS (Normalized) Normalized On-Resistance 6V 7V 40 1.5 1 1.1 1 0.9 0.5 0 -100 -50 0 50 100 150 200 Temperature (°C) Figure 5: On-Resistance vs. Junction Temperature Rev3: Nov 2012 www.aosmd.com 0.8 -100 -50 0 50 100 150 200 TJ (oC) Figure 6: Break Down vs. Junction Temperature Page 3 of 6 AOT42S60/AOB42S60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 1.0E+02 1.0E+01 12 VDS=480V ID=21A 125°C 1.0E-01 25°C VGS (Volts) IS (A) 1.0E+00 1.0E-02 1.0E-03 9 6 3 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 0 1.0 0 15 30 45 60 Qg (nC) Figure 8: Gate-Charge Characteristics VSD (Volts) Figure 7: Body-Diode Characteristics (Note E) 10000 20 16 1000 Eoss(uJ) Capacitance (pF) Ciss Coss 100 Eoss 12 8 Crss 10 4 0 1 0 100 200 300 400 500 VDS (Volts) Figure 9: Capacitance Characteristics 600 0 100 200 300 400 VDS (Volts) Figure 10: Coss stored Energy 500 600 1000 ID (Amps) 100 10µs RDS(ON) limited 10 100µs 1ms 10ms 1 DC TJ(Max)=150°C TC=25°C 0.1 0.01 0.1 1 10 100 1000 VDS (Volts) Figure 11: Maximum Forward Biased Safe Operating Area for AOT(B)42S60(Note F) Rev3: Nov 2012 www.aosmd.com Page 4 of 6 AOT42S60/AOB42S60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 1500 35 Current rating ID(A) EAS(mJ) 1200 900 600 300 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 0 25 75 100 125 TCASE (°C) Figure 13: Current De-rating (Note B) TCASE (°C) Figure 12: Avalanche energy 50 150 Zθ JC Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.3°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for AOT(B)42S60(Note F) Rev3: Nov 2012 www.aosmd.com Page 5 of 6 AOT42S60/AOB42S60 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev3: Nov 2012 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 6 of 6