EC733616 30V,9A,N-Channel MOSFET Description The EC733616 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Features and Benefits: SSF3616 ◆ VDS = 30V,ID =9A RDS(ON) < 30mΩ @ VGS=4.5V RDS(ON) < 18.5mΩ @ VGS=10V ◆ High Power and current handing capability ◆ Lead free product is acquired ◆ Surface Mount Package Application ◆ PWM applications ◆ Load switch ◆ Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±25 V ID（25℃） 9 A ID（70℃） 7 IDM 40 A PD 2.5 W TJ,TSTG -55 To 150 ℃ Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 6 4J01N-Rev.F002 EC733616 30V,9A,N-Channel MOSFET Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 30 Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.3 1.8 V Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=7A 21 30 mΩ VGS=10V, ID=9A 16 18.5 mΩ VDS=15V,ID=9A 10 S 600 PF 75 PF OFF CHARACTERISTICS V ON CHARACTERISTICS (Note 3) Forward Transconductance gFS 0.8 DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=15V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 45 PF Turn-on Delay Time td(on) 4 nS Turn-on Rise Time tr VDS=15V,VGS=10V,RGEN=6Ω 12 nS td(off) ID=1A 22 nS 4 nS 12 nC 1.2 nC 3.8 nC 13 nS 7 nC SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Body Diode Reverse Recovery Time Trr Body Diode Reverse Recovery Charge Qrr VDS=15V,ID=9A,VGS=10V IF=9A, dI/dt=100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=3A 0.7 1.2 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2 2. Surface Mounted on 1in FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. E-CMOS Corp. (www.ecmos.com.tw) Page 2 of 6 4J01N-Rev.F002 V 30V,9A,N-Channel MOSFET EC733616 Typical electrical and thermal characteristics E-CMOS Corp. (www.ecmos.com.tw) Page 3 of 6 4J01N-Rev.F002 30V,9A,N-Channel MOSFET E-CMOS Corp. (www.ecmos.com.tw) Page 4 of 6 EC733616 4J01N-Rev.F002 30V,9A,N-Channel MOSFET EC733616 Ordering and Marking Information EC733616 XX X R：Tape & Reel M1＝SOP 8L E-CMOS Corp. (www.ecmos.com.tw) Part Number Package Marking EC733616M1R SOP 8L SSF3616 Page 5 of 6 4J01N-Rev.F002 30V,9A,N-Channel MOSFET EC733616 SOP 8L Package Outline Dimension E-CMOS Corp. (www.ecmos.com.tw) Page 6 of 6 4J01N-Rev.F002