DATA SHEET THYRISTORS AC16DSMA,AC16FSMA 16 A MOLD ISOLATED TRIAC PACKAGE DRAWING (Unit: mm) DESCRIPTION The AC16DSMA and AC16FSMA are all diffused mold type 4.7 MAX. 10.5 MAX. triac granted RMS on-state current 16 A, with rated voltages up 7 ±0.2 φ 3.2 ±0.2 3.0 MAX. 2.8 ±0.2 • Isolated plastic package (modified TO-220AB) 1 2 3 5 ±0.2 • 150 A surge current APPLICATIONS 12 ±0.2 FEATURES * 13.5 MIN. 17 ±0.2 5 ±0.1 to 600 V. • Motor speed control • Lamp dimmer, temperature controllers • Various solid state switches, etc. 0.8 ±0.1 1.3 ±0.2 1.5 ±0.2 0.5 ±0.1 2.54 TYP. 2.54 TYP. 2.5 ±0.1 Triac 1: T1 2: T2 3: Gate ABSOLUTE MAXIMUM RATINGS *: TC test bench-mark Standard weight: 2 g Parameter Symbol AC16DSMA AC16FSMA Unit Remarks Non-repetitive Peak Off-state Voltage VDSM 500 700 V − Repetitive Peak Off-state Voltage VDRM 400 600 V − RMS On-state Current IT(RMS) 16 (TC = 68°C) A Refer to Figure 11. Surge On-state Current ITSM 150 (50 Hz 1 cycle) A Refer to Figure 2. 165 (60 Hz 1 cycle) Fusing Current ∫ iT2dt 100 (1 ms ≤ t ≤ 10 ms) As 2 − Critical Rate Rise of On-state Current dIT/dt 50 A/µs − PGM 5 (f ≥ 50 Hz, Duty ≤ 10%) W PG(AV) 0.5 W Peak Gate Current IGM ±3 (f ≥ 50 Hz, Duty ≤ 10%) A Junction Temperature Tj −40～+125 °C − Storage Temperature Tstg −55～+150 °C − Peak Gate Power Dissipation Average Gate Power Dissipation Refer to Figure 3. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17166EJ3V0DS00 (3rd edition) (Previous No. SC-2106A) Date Published June 2004 NS CP(K) Printed in Japan The mark shows major revised points. 1988 AC16DSMA,AC16FSMA ELECTRICAL CHARACTERISTICS (Tj = 25°C) Parameter Symbol Repetitive Peak Off-state Current On-state Voltage IDRM VTM Gate Trigger Current TYP. MAX. Unit Remarks Tj = 25°C − − 100 µA − Tj = 125°C − − 2 mA − − − 1.4 V Refer to Figure 1. mA ITM = 25 A T2+, G+ − − 30 RL = 30 Ω T2−, G+ − − − III T2−, G− − − 30 IV T2+, G− − − 30 VDM = 12 V, T2+, G+ − − 1.5 RL = 30 Ω T2−, G+ − − − III T2−, G− − − 1.5 IV T2+, G− Tj = 125°C, VDM = 1 VDRM − − 1.5 0.3 − − V − − 30 − mA Refer to Figure 9. − 100 − V/µs 10 − − V/µs IGT Mode I VGT II Gate Non-trigger Voltage Holding Current VGD IH Critical Rate Rise of Off-state Voltage Commutating Critical Rate Rise of dv/dt 2 VDM = 24 V, ITM = 20 A 2 Tj = 125°C, VDM = 3 VDRM (dv/dt)c Tj = 125°C, ITM = 22 A Refer to Figure 4, 5 and 7. V Refer to Figure 4, 6 and 8. Note Rth(j-c) Junction to case AC − − 3.3 °C/W Refer to Figure 13. Rth(j-a) Junction to ambient AC − − 60 °C/W Note The thermal resistance at 50 Hz and 60 Hz sine wave current, which is shown on the follow expression. Rth(j-c) = Tj (max) − TC PT ( AV ) Tj(max): Maximum junction temperature TC: Case temperature PT(AV): Average on-dissipation 2 − (diT/dt)c = −8 A/ms, VD = 400 V Off-state Voltage Thermal Resistance VDM = VDRM MIN. VDM = 12 V, Mode I II Gate Trigger Voltage Conditions Data Sheet D17166EJ3V0DS AC16DSMA,AC16FSMA TYPICAL CHARACTERISTICS Figure 1. iT vs. νT CHARACTERISTIC Figure 2. ITSM RATING 180 MAX. ITSM - Surge On-state Current - A iT - On-state Current - A 100 10 25˚C Tj = 125˚C 1 0.1 0 1 2 Initial Tj = 125˚C ITSM 2π 0 π 160 60 Hz N=1 140 50 Hz 120 100 80 60 40 0 3 1 5 νT - On-state Voltage - V Figure 3. GATE RATING 8 6 PGM = 5 W f ≥ 50 Hz Duty ≤ 10% 4 0 100 Figure 4. GATE CHARACTERISTIC Tj = −40 to +125˚C PG(AV) = 0.5 W 2 50 3 Trigger mode I, III, IV VGT - Gate Trigger Voltage - V VG - Gate Voltage - V 10 10 Cycles - N 2 Tj = −40˚C 25˚C 1 125˚C 0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 20 IG - Gate Current - A 40 60 80 100 120 IGT - Gate Trigger Current - mA Figure 5. IGT vs. TA CHARACTERISTIC Figure 6. VGT vs. TA CHARACTERISTIC 1000 100 10 1 −40 1.2 1.0 0.8 0.6 0.4 0.2 0 0 40 80 Trigger mode I, III, IV 1.4 VGT - Gate Trigger Voltage - V IGT - Gate Trigger Current - mA Trigger mode I, III, IV 120 TA - Ambient Temperature - °C −40 0 40 80 120 TA - Ambient Temperature - °C Data Sheet D17166EJ3V0DS 3 AC16DSMA,AC16FSMA Figure 7. iGT vs. τ CHARACTERISTIC Figure 8. νGT vs. τ CHARACTERISTIC 10000 5 Trigger mode I, III, IV νGT - Gate Trigger Voltage - V iGT - Gate Trigger Current - mA Trigger mode I, III, IV 1000 100 10 1 4 3 2 1 0 1 10 100 1000 1 10 τ - Pulse Width - µs IH - Holding Current - mA 60 50 40 30 20 10 50 100 150 TA - Ambient Temperature - °C PT(AV) - On-state Average Power Dissipation - W Figure 10. PT(AV) vs. IT(RMS) CHARACTERISTIC 70 0 1000 τ - Pulse Width - µs Figure 9. IH vs. TA CHARACTERISTIC 0 −50 100 24 22 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 IT(RMS) - RMS On-state Current - A Figure 11. TC vs. IT(RMS) RATING Figure 12. TA vs. IT(RMS) RATING TA - Ambient Temperature - °C 140 TC - Case Temperature - °C 140 120 100 80 60 40 20 120 100 80 60 40 20 0 0 0 2 4 6 8 10 12 14 16 18 20 IT(RMS) - RMS On-state Current - A 4 0 1.0 2.0 IT(RMS) - RMS On-state Current - A Data Sheet D17166EJ3V0DS AC16DSMA,AC16FSMA Figure 13. Zth CHARACTERISTIC Zth - Transient Thermal Impedance - °C/W 100 Junction to ambient 10 Junction to case 1 0.1 0.1 1 10 100 1k 10 k 100 k Cycles (50 Hz) Data Sheet D17166EJ3V0DS 5 AC16DSMA,AC16FSMA • The information in this document is current as of June, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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