To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. 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HAT2131R Silicon N Channel Power MOS FET Power Switching REJ03G1815-0100 Rev.1.00 Jul 17, 2009 Features • • • • Low on-resistance Low drive current High density mounting Capable of 4 V gate drive Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) 5 6 7 8 D D D D 65 87 4 G 3 12 1, 2, 3 4 5, 6, 7, 8 4 Source Gate Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) Note1 IDR IDR (pulse) Note1 Pch Note2 Tch Tstg Ratings 350 ±20 0.9 7.2 0.9 7.2 2.5 150 –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s REJ03G1815-0100 Rev.1.00 Jul 17, 2009 Page 1 of 6 Unit V V A A A A W °C °C HAT2131R Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Min 350 — — 1.0 1.2 — — — — — — — — — — — — Typ — — — — 2.0 2.5 2.6 460 32 8 15 13 76 50 20 1 6 Max — 0.1 ±0.1 2.5 — 3.0 3.2 — — — — — — — — — — Unit V µA µA V S Ω Ω pF pF pF ns ns ns ns nC nC nC VDF trr — — 0.8 220 1.2 — V ns Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 3. Pulse test REJ03G1815-0100 Rev.1.00 Jul 17, 2009 Page 2 of 6 Test conditions ID = 10 mA, VGS = 0 VDS = 350 V, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 0.45 A, VDS = 10 V Note3 ID = 0.45 A, VGS = 10 V Note3 ID = 0.45 A, VGS = 4 V Note3 VDS = 25 V VGS = 0 f = 1 MHz ID = 0.45 A VGS = 10 V RL = 556 Ω Rg = 10 Ω VDD = 250 V VGS = 10 V ID = 0.9 A IF = 0.9 A, VGS = 0 Note3 IF = 0.9 A, VGS = 0 diF/dt = 100 A/µs HAT2131R Main Characteristics Maximum Safe Operation Area Typical Output Characteristics 5 10 µs 10 ID (A) ID (A) 100 PW = 100 µs 0.1 Operation in this area is limited by RDS(on) 0.01 Ta = 25°C 0.001 1 shot 0.1 1 10 100 0 Drain to Source on State Resistance RDS(on) (Ω) 2 1 25°C Tc = 75°C −25°C 0 2 3 4 Gate to Source Voltage 5 VGS = 10 V Pulse Test 8 ID = 0.9 A 0.45 A 4 0.1 A 2 25 50 75 Case Temperature 100 125 150 Tc (°C) REJ03G1815-0100 Rev.1.00 Jul 17, 2009 Page 3 of 6 8 12 16 20 VDS (V) 10 Ta = 25°C Pulse Test VGS = 4 V 3 10 V 1 0.1 1 VGS (V) Static Drain to Source on State Resistance vs. Temperature (Typical) (1) 6 4 Drain to Source Voltage 10 Drain Current Static Drain to Source on State Resistance RDS(on) (Ω) ID (A) Drain Current 3 0 2.4 V Static Drain to Source on State Resistance vs. Drain Current (Typical) 4 0 −25 1 VDS (V) VDS = 10 V Pulse Test 1 2.6 V 1000 5 0 2 VGS = 2.2 V Typical Transfer Characteristics Static Drain to Source on State Resistance RDS(on) (Ω) 2.8 V 0 Drain to Source Voltage 10 3V 4V 10 V 4 3 Drain Current Drain Current 1 Ta = 25°C Pulse Test ID (A) Static Drain to Source on State Resistance vs. Temperature (Typical) (2) 10 VGS = 4 V Pulse Test 8 ID = 0.9 A 6 0.45 A 4 0.1 A 2 0 −25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) HAT2131R Body-Drain Diode Reverse Recovery Time (Typical) Typical Capacitance vs. Drain to Source Voltage 10000 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 100 VGS = 0 f = 1 MHz Ta = 25°C 1000 Ciss 100 Coss 10 Crss di / dt = 100 A / µs VGS = 0, Ta = 25°C 1 10 1 0 10 Reverse Drain Current IDR (A) VDS = 100 V 250 V 400 VDS 200 4 VDS = 250 V 100 V 0 0 8 16 24 Gate Charge Gate to Source Cutoff Voltage VGS(off) (V) 8 32 0 40 Qg (nC) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 2.5 VDS = 10 V 2.0 1.5 ID = 10 mA 1.0 1 mA 0.1 mA 0.5 0 -25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) REJ03G1815-0100 Rev.1.00 Jul 17, 2009 Page 4 of 6 5 Reverse Drain Current IDR (A) 12 VGS (V) VGS 600 120 160 200 VDS (V) Reverse Drain Current vs. Source to Drain Voltage (Typical) Gate to Source Voltage VDS (V) Drain to Source Voltage 16 ID = 0.9 A Ta = 25°C 80 Drain to Source Voltage Dynamic Input Characteristics (Typical) 800 40 VGS = 0 V Ta = 25 °C Pulse Test 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage VSD (V) HAT2131R Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 1 D=1 0.5 0.2 0.1 0.1 θch – f (t) = γ s (t) • θch – f θch – f = 83.3°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 0.05 0.01 0.02 0.01 D= PDM 0.001 1s 0.0001 10 µ t ho pu lse PW T PW T 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (s) Switching Time Test Circuit 90% Vout Monitor Vin Monitor 10 Ω Switching Time Waveform D.U.T. Vin Vout Vin 10 V 10% RL VDD = 250 V 10% 90% td(on) REJ03G1815-0100 Rev.1.00 Jul 17, 2009 Page 5 of 6 10% tr 90% td(off) tf HAT2131R Package Dimensions JEITA Package Code P-SOP8-3.95 × 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g F Package Name SOP-8 *1 D bp 1 c *2 E Index mark HE 5 8 4 Z *3 Terminal cross section (Ni/Pd/Au plating) bp x M e NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Reference Dimension in Millimeters Symbol Min D E A2 A1 A bp b1 c c1 1 A L1 L y HE e x y Z L L1 Detail F Ordering Information Part No. HAT2131R-EL-E Quantity 2500 pcs REJ03G1815-0100 Rev.1.00 Jul 17, 2009 Page 6 of 6 Shipping Container Taping Nom Max 4.90 5.3 3.95 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 0° 8° 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. 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