LMV1012 www.ti.com SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 LMV1012 Analog Series: Pre-Amplified IC's for High Gain 2-Wire Microphones Check for Samples: LMV1012 FEATURES DESCRIPTION • The LMV1012 is an audio amplifier series for small form factor electret microphones. This 2-wire portfolio is designed to replace the JFET amplifier currently being used. The LMV1012 series is ideally suited for applications requiring high signal integrity in the presence of ambient or RF noise, such as in cellular communications. The LMV1012 audio amplifiers are specified to operate over a 2.2V to 5.0V supply voltage range with fixed gains of 7.8 dB, 15.6 dB, 20.9 dB, and 23.8 dB. The devices offer excellent THD, gain accuracy and temperature stability as compared to a JFET microphone. 1 2 • • • • • • • • Typical LMV1012-15, 2.2V Supply, RL = 2.2 kΩ, C = 2.2 μF, VIN = 18 mVPP, Unless Otherwise Specified Supply Voltage: 2V - 5V Supply Current: <180 μA Signal to Noise Ratio (A-Weighted): 60 dB Output Voltage Noise (A-Weighted): −89 dBV Total Harmonic Distortion: 0.09% Voltage Gain – LMV1012-07: 7.8 dB – LMV1012-15: 15.6 dB – LMV1012-20: 20.9 dB – LMV1012-25: 23.8 dB Temperature Range: −40°C to 85°C Offered in 4-Bump DSBGA Packages APPLICATIONS • • • • • • Cellular Phones Headsets Mobile Communications Automotive Accessories PDAs Accessory Microphone Products Schematic Diagram The LMV1012 series enables a two-pin electret microphone solution, which provides direct pin-to-pin compatibility with the existing JFET market. The devices are offered in extremely thin space saving 4-bump DSBGA packages. The LMV1012XP is designed for 1.0 mm canisters and thicker ECM canisters. These extremely miniature packages are designed for electret condenser microphones (ECM) form factor. Built-In Gain Electret Microphone DIAPHRAGM VDD 2.2k xx xx xxx x 2.2PF x ELECTRET AIRGAP BACKPLATE CONNECTOR OUTPUT INPUT x x LMV1012 + x - + IC x GND 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2002–2013, Texas Instruments Incorporated LMV1012 SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. Absolute Maximum Ratings (1) (2) ESD Tolerance (3) Supply Voltage Human Body Model Machine Model VDD - GND Junction Temperature (4) (1) (2) (3) (4) 250V 5.5V −65°C to 150°C Storage Temperature Range Mounting Temperature 2500V 150°C max Infrared or Convection (20 sec.) 235°C Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test conditions, see the 5V Electrical Characteristics. If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. Human Body Model (HBM) is 1.5 kΩ in series with 100 pF. The maximum power dissipation is a function of TJ(MAX) , θJA and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) - TA)/θJA. All numbers apply for packages soldered directly into a PC board. Operating Ratings (1) Supply Voltage 2V to 5V −40°C to 85°C Temperature Range (1) 2 Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test conditions, see the 5V Electrical Characteristics. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMV1012 LMV1012 www.ti.com SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 2.2V Electrical Characteristics (1) Unless otherwise specified, all limits are specified for TJ = 25°C, VDD = 2.2V, VIN = 18 mV, RL = 2.2 kΩ and C = 2.2 μF. Boldface limits apply at the temperature extremes. Symbol IDD Parameter Supply Current SNR VIN Signal to Noise Ratio Max Input Signal Typ (3) Max (2) LMV1012-07 139 250 300 LMV1012-15 180 300 325 LMV1012-20 160 250 300 LMV1012-25 141 250 300 LMV1012-07 59 LMV1012-15 60 LMV1012-20 61 LMV1012-25 61 LMV1012-07 170 LMV1012-15 100 LMV1012-20 50 Conditions VIN = GND f = 1 kHz, VIN = 18 mV, A-Weighted f = 1 kHz and THD+N < 1% Min (2) LMV1012-25 VOUT Output Voltage VIN = GND Units μA dB mVPP 28 LMV1012-07 1.65 1.54 1.90 2.03 2.09 LMV1012-15 1.54 1.48 1.81 1.94 2.00 LMV1012-20 1.65 1.55 1.85 2.03 2.13 LMV1012-25 1.65 1.49 1.90 2.02 2.18 V fLOW Lower −3dB Roll Off Frequency RSOURCE = 50Ω 65 Hz fHIGH Upper −3dB Roll Off Frequency RSOURCE = 50Ω 95 kHz en Output Noise A-Weighted THD Total Harmonic Distortion CIN Input Capacitance ZIN Input Impedance AV Gain (1) (2) (3) f = 1 kHz, VIN = 18 mV f = 1 kHz, RSOURCE = 50Ω LMV1012-07 −96 LMV1012-15 −89 LMV1012-20 −84 LMV1012-25 −82 LMV1012-07 0.10 LMV1012-15 0.09 LMV1012-20 0.12 LMV1012-25 0.15 dBV % 2 pF >1000 GΩ LMV1012-07 6.4 5.5 7.8 9.5 10.0 LMV1012-15 14.0 13.1 15.6 16.9 17.5 LMV1012-20 19.5 17.4 20.9 22.0 23.3 LMV1012-25 22.5 21.4 23.8 25.0 25.7 dB Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. All limits are specified by design or statistical analysis. Typical values represent the most likely parametric norm. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMV1012 3 LMV1012 SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 www.ti.com 5V Electrical Characteristics (1) Unless otherwise specified, all limits are specified for TJ = 25°C, VDD = 5V, VIN = 18 mV, RL = 2.2 kΩ and C = 2.2 μF. Boldface limits apply at the temperature extremes. Symbol IDD Parameter Supply Current SNR VIN Signal to Noise Ratio Max Input Signal Min (2) Typ (3) Max (2) LMV1012-07 158 250 300 LMV1012-15 200 300 325 LMV1012-20 188 260 310 LMV1012-25 160 250 300 LMV1012-07 59 LMV1012-15 60 LMV1012-20 61 LMV1012-25 61 LMV1012-07 170 LMV1012-15 100 LMV1012-20 55 Conditions VIN = GND f = 1 kHz, VIN = 18 mV, A-Weighted f = 1 kHz and THD+N < 1% LMV1012-25 VOUT Output Voltage VIN = GND Units μA dB mVPP 28 LMV1012-07 4.45 4.38 4.65 4.80 4.85 LMV1012-15 4.34 4.28 4.56 4.74 4.80 LMV1012-20 4.40 4.30 4.58 4.75 4.85 LMV1012-25 4.45 4.39 4.65 4.83 4.86 V fLOW Lower −3dB Roll Off Frequency RSOURCE = 50Ω 67 Hz fHIGH Upper −3dB Roll Off Frequency RSOURCE = 50Ω 150 kHz en Output Noise A-Weighted THD Total Harmonic Distortion CIN Input Capacitance ZIN Input Impedance AV Gain (1) (2) (3) 4 f = 1 kHz, VIN = 18 mV f = 1 kHz, RSOURCE = 50Ω LMV1012-07 −96 LMV1012-15 −89 LMV1012-20 −84 LMV1012-25 −82 LMV1012-07 0.12 LMV1012-15 0.13 LMV1012-20 0.18 LMV1012-25 0.21 dBV % 2 pF >1000 GΩ LMV1012-07 6.4 5.5 8.1 9.5 10.7 LMV1012-15 14.0 13.1 15.6 16.9 17.5 LMV1012-20 19.2 17.0 21.1 22.3 23.5 LMV1012-25 22.5 21.2 23.9 25.0 25.8 dB Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. All limits are specified by design or statistical analysis. Typical values represent the most likely parametric norm. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMV1012 LMV1012 www.ti.com SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 Connection Diagram B2 GND A2 OUTPUT X B1 INPUT A1 GND 4-Bump DSBGA (Top View) NOTE Pin numbers are referenced to package marking text orientation. The actual physical placement of the package marking will vary slightly from part to part. The package will designate the date code and will vary considerably. Package marking does not correlate to device type in any way. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMV1012 5 LMV1012 SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 www.ti.com Typical Performance Characteristics Unless otherwise specified, VS = 2.2V, RL = 2.2 kΩ, C = 2.2 μF, single supply, TA = 25°C Supply Current vs. Supply Voltage (LMV1012-07) Supply Current vs. Supply Voltage (LMV1012-15) 180 260 240 SUPPLY CURRENT (PA) SUPPLY CURRENT (PA) 170 85°C 160 25°C 150 140 130 120 220 85°C 25°C 200 180 160 140 110 -40°C -40°C 100 120 2 3 2.5 3.5 4 4.5 5 2 5.5 4 4.5 5.5 5 Figure 1. Figure 2. Supply Current vs. Supply Voltage (LMV1012-20) Supply Current vs. Supply Voltage (LMV1012-25) 220 200 SUPPLY CURRENT (PA) 220 85°C 200 25°C 180 160 140 -40°C 85°C 180 25°C 160 140 120 120 -40°C 100 100 2 2.5 3 3.5 4 4.5 5 2 5.5 2.5 3.5 4 4.5 5.5 5 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) Figure 3. Figure 4. Gain and Phase vs. Frequency (LMV1012-07) Gain and Phase vs. Frequency (LMV1012-15) 300 18 8 250 16 6 200 14 10 GAIN 150 2 100 0 50 0 -2 0 GAIN -40 -80 -120 12 GAIN (dB) PHASE PHASE (°C ) 4 3 PHASE 10 -160 8 -200 6 -240 -4 -50 -6 -100 4 -280 -8 -150 2 -320 -200 0 -10 10 100 1k 10k 100k 1M 10 FREQUENCY (Hz) Figure 5. 100 100k 1k 10k FREQUENCY (Hz) PHASE (°) SUPPLY CURRENT (PA) 240 GAIN (dB) 3.5 SUPPLY VOLTAGE (V) 260 6 3 2.5 SUPPLY VOLTAGE (V) -360 1M Figure 6. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMV1012 LMV1012 www.ti.com SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 Typical Performance Characteristics (continued) Unless otherwise specified, VS = 2.2V, RL = 2.2 kΩ, C = 2.2 μF, single supply, TA = 25°C Gain and Phase vs. Frequency (LMV1012-20) Gain and Phase vs. Frequency (LMV1012-25) 25 300 GAIN 300 GAIN 250 20 20 200 200 150 50 10 0 GAIN (dB) 100 15 150 PHASE PHASE (°) PHASE GAIN (dB) 250 100 15 50 0 10 -50 5 -50 5 -100 -100 -150 -150 -200 0 100 10 1k 10k 100k PHASE (°C ) 25 -200 0 100 10 1M 1k 10k 100k 1M FREQUENCY (Hz) FREQUENCY (Hz) Figure 7. Figure 8. Total Harmonic Distortion vs. Frequency (LMV1012-07) Total Harmonic Distortion vs. Frequency (LMV1012-15) 0.7 0.6 VIN = 18 mVPP VIN = 18 mVPP 0.6 0.5 0.5 THD+N (%) THD+N (%) 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0.1 0.0 0.0 10 100 1k 10k 100k 10 1k 100 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure 9. Figure 10. Total Harmonic Distortion vs. Frequency (LMV1012-20) Total Harmonic Distortion vs. Frequency (LMV1012-25) 0.6 0.6 VIN = 18 mVPP 0.5 0.5 0.4 0.4 THD+N (%) THD+N (%) VIN = 18 mVPP 0.3 0.3 0.2 0.2 0.1 0.1 0.0 0.0 10 100 1k 10k 100k FREQUENCY (Hz) 10 100 1k 10k 100k FREQUENCY (Hz) Figure 11. Figure 12. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMV1012 7 LMV1012 SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 www.ti.com Typical Performance Characteristics (continued) Unless otherwise specified, VS = 2.2V, RL = 2.2 kΩ, C = 2.2 μF, single supply, TA = 25°C Total Harmonic Distortion vs. Input Voltage (LMV1012-07) Total Harmonic Distortion vs. Input Voltage (LMV1012-15) 1.0 1.0 f = 1 kHz 0.9 0.8 0.8 0.7 0.7 THD+N (%) THD+N (%) f = 1 kHz 0.9 0.6 0.5 0.4 0.6 0.5 0.4 0.3 0.3 0.2 0.2 0.1 0.1 0.0 0.0 0 50 100 150 200 250 0 INPUT VOLTAGE (mVPP) 20 40 60 80 100 Figure 14. Total Harmonic Distortion vs. Input Voltage (LMV1012-20) Total Harmonic Distortion vs. Input Voltage (LMV1012-25) 1.0 1.0 0.9 0.9 0.8 0.8 0.7 0.7 THD+N (%) THD+N (%) Figure 13. 0.6 0.5 0.4 0.6 0.5 0.4 0.3 0.3 0.2 0.2 0.1 0.1 f = 1 kHz f = 1 kHz 0.0 0.0 0 10 20 30 40 50 0 60 10 20 Figure 15. 40 Figure 16. Output Noise vs. Frequency (LMV1012-07) Output Noise vs. Frequency (LMV1012-15) -100 -100 INPUT IS CONNECTED TO GND -105 -110 -110 -115 -115 -120 -125 -130 -135 INPUT IS CONNECTED TO GND -105 NOISE (dBV/ Hz) NOISE (dBV/ Hz) 30 INPUT VOLTAGE (mVPP) INPUT VOLTAGE (mVPP) -120 -125 -130 -135 -140 -140 -145 -145 -150 -150 10 100 1k 10k 100k 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure 17. 8 120 INPUT VOLTAGE (mVPP) Figure 18. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMV1012 LMV1012 www.ti.com SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 Typical Performance Characteristics (continued) Unless otherwise specified, VS = 2.2V, RL = 2.2 kΩ, C = 2.2 μF, single supply, TA = 25°C Output Noise vs. Frequency (LMV1012-20) Output Noise vs. Frequency (LMV1012-25) -100 -100 INPUT IS CONNECTED TO GND -110 -110 -115 -115 -120 -125 -130 -135 -120 -125 -130 -135 -140 -140 -145 -145 -150 INPUT IS CONNECTED TO GND -105 NOISE (dBV/ Hz) NOISE (dBV/ Hz) -105 -150 10 100 1k 10k 100k FREQUENCY (Hz) 10 100 1k 10k 100k FREQUENCY (Hz) Figure 19. Figure 20. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMV1012 9 LMV1012 SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 www.ti.com APPLICATION SECTION HIGH GAIN The LMV1012 series provides outstanding gain versus the JFET and still maintains the same ease of implementation, with improved gain, linearity and temperature stability. A high gain eliminates the need for extra external components. BUILT IN GAIN The LMV1012 is offered in 0.3 mm height space saving small 4-pin DSBGA packages in order to fit inside the different size ECM canisters of a microphone. The LMV1012 is placed on the PCB inside the microphone. The bottom side of the PCB usually shows a bull's eye pattern where the outer ring, which is shorted to the metal can, should be connected to the ground. The center dot on the PCB is connected to the VDD through a resistor. This phantom biasing allows both supply voltage and output signal on one connection. DIAPHRAGM xxxx xxx x x ELECTRET AIRGAP BACKPLATE CONNECTOR x x LMV1012 IC x x Figure 21. Built in Gain A-WEIGHTED FILTER The human ear has a frequency range from 20 Hz to about 20 kHz. Within this range the sensitivity of the human ear is not equal for each frequency. To approach the hearing response weighting filters are introduced. One of those filters is the A-weighted filter. The A-weighted filter is usually used in signal to noise ratio measurements, where sound is compared to device noise. This filter improves the correlation of the measured data to the signal to noise ratio perceived by the human ear. 10 0 -10 dBV -20 -30 -40 -50 -60 -70 10 100 1k 10k 100k FREQUENCY (Hz) Figure 22. A-Weighted Filter 10 Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMV1012 LMV1012 www.ti.com SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 MEASURING NOISE AND SNR The overall noise of the LMV1012 is measured within the frequency band from 10 Hz to 22 kHz using an Aweighted filter. The input of the LMV1012 is connected to ground with a 5 pF capacitor, as in Figure 23. Special precautions in the internal structure of the LMV1012 have been taken to reduce the noise on the output. A-WEIGHTED FILTER 5 pF Figure 23. Noise Measurement Setup The signal to noise ratio (SNR) is measured with a 1 kHz input signal of 18 mVPP using an A-weighted filter. This represents a sound pressure level of 94 dB SPL. No input capacitor is connected for the measurement. SOUND PRESSURE LEVEL The volume of sound applied to a microphone is usually stated as a pressure level referred to the threshold of hearing of the human ear. The sound pressure level (SPL) in decibels is defined by: Sound pressure level (dB) = 20 log Pm/PO where • • Pm is the measured sound pressure PO is the threshold of hearing (20 μPa). (1) In order to be able to calculate the resulting output voltage of the microphone for a given SPL, the sound pressure in dB SPL needs to be converted to the absolute sound pressure in dBPa. This is the sound pressure level in decibels referred to 1 Pascal (Pa). The conversion is given by: dBPa = dB SPL + 20*log 20 μPa dBPa = dB SPL - 94 dB (2) (3) Translation from absolute sound pressure level to a voltage is specified by the sensitivity of the microphone. A conventional microphone has a sensitivity of -44 dBV/Pa. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMV1012 11 LMV1012 SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 www.ti.com ABSOLUTE SOUND PRESSURE [dBPa] -94 dB SENSITIVITY [dBV/Pa] SOUND PRESSURE [dB SPL] VOLTAGE [dBV] Figure 24. dB SPL to dBV Conversion Example: Busy traffic is 70 dB SPL VOUT = 70 −94 −44 = −68 dBV (4) This is equivalent to 1.13 mVPP Since the LMV1012-15 has a gain of 6 (15.6 dB) over the JFET, the output voltage of the microphone is 6.78 mVPP. By implementing the LMV1012-15, the sensitivity of the microphone is -28.4 dBV/Pa (−44 + 15.6). LOW FREQUENCY CUT OFF FILTER To reduce noise on the output of the microphone a low frequency cut off filter has been implemented. This filter reduces the effect of wind and handling noise. It's also helpful to reduce the proximity effect in directional microphones. This effect occurs when the sound source is very close to the microphone. The lower frequencies are amplified which gives a bass sound. This amplification can cause an overload, which results in a distortion of the signal. 20 GAIN (dB) 15 10 5 85°C 25°C 0 -40°C VDD = 2.2V -5 10 100 1k 10k 100k 1M FREQUENCY (Hz) Figure 25. LMV1012-15 Gain vs. Frequency Over Temperature The LMV1012 is optimized to be used in audio band applications. By using the LMV1012, the gain response is flat within the audio band and has linearity and temperature stability (see Figure 25). 12 Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMV1012 LMV1012 www.ti.com SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 NOISE Noise pick-up by a microphone in cell phones is a well-known problem. A conventional JFET circuit is sensitive for noise pick-up because of its high output impedance, which is usually around 2.2 kΩ. RF noise is amongst other caused by non-linear behavior. The non-linear behavior of the amplifier at high frequencies, well above the usable bandwidth of the device, causes AM-demodulation of high frequency signals. The AM modulation contained in such signals folds back into the audio band, thereby disturbing the intended microphone signal. The GSM signal of a cell phone is such an AM-modulated signal. The modulation frequency of 216 Hz and its harmonics can be observed in the audio band. This kind of noise is called bumblebee noise. RF noise caused by a GSM signal can be reduced by connecting two external capacitors to ground, see Figure 26. One capacitor reduces the noise caused by the 900 MHz carrier and the other reduces the noise caused by 1800/1900 MHz. VDD OUTPUT INPUT 10 pF 33 pF Figure 26. RF Noise Reduction Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMV1012 13 LMV1012 SNAS194H – NOVEMBER 2002 – REVISED MAY 2013 www.ti.com REVISION HISTORY Changes from Revision G (May 2013) to Revision H • 14 Page Changed layout of National Data Sheet to TI format .......................................................................................................... 13 Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMV1012 PACKAGE OPTION ADDENDUM www.ti.com 3-Jul-2014 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) LMV1012TP-25/NOPB ACTIVE DSBGA YPB 4 250 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM LMV1012TPX-15/NOPB ACTIVE DSBGA YPB 4 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM -40 to 85 LMV1012TPX-25/NOPB ACTIVE DSBGA YPB 4 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM -40 to 85 LMV1012UP-07/NOPB ACTIVE DSBGA YPC 4 250 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM LMV1012UP-15/NOPB ACTIVE DSBGA YPC 4 250 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM LMV1012UP-20/NOPB ACTIVE DSBGA YPC 4 250 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM LMV1012UP-25/NOPB ACTIVE DSBGA YPC 4 250 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 3-Jul-2014 (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 18-Aug-2014 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) LMV1012TP-25/NOPB DSBGA YPB 4 250 178.0 8.4 LMV1012TPX-15/NOPB DSBGA YPB 4 3000 178.0 LMV1012TPX-25/NOPB DSBGA YPB 4 3000 178.0 LMV1012UP-07/NOPB DSBGA YPC 4 250 LMV1012UP-15/NOPB DSBGA YPC 4 LMV1012UP-20/NOPB DSBGA YPC LMV1012UP-25/NOPB DSBGA YPC 1.02 1.09 0.66 4.0 8.0 Q1 8.4 1.02 1.09 0.66 4.0 8.0 Q1 8.4 1.02 1.09 0.66 4.0 8.0 Q1 178.0 8.4 1.02 1.09 0.56 4.0 8.0 Q1 250 178.0 8.4 1.02 1.09 0.56 4.0 8.0 Q1 4 250 178.0 8.4 1.02 1.09 0.56 4.0 8.0 Q1 4 250 178.0 8.4 1.02 1.09 0.56 4.0 8.0 Q1 Pack Materials-Page 1 W Pin1 (mm) Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 18-Aug-2014 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LMV1012TP-25/NOPB DSBGA YPB 4 250 210.0 185.0 35.0 LMV1012TPX-15/NOPB DSBGA YPB 4 3000 210.0 185.0 35.0 LMV1012TPX-25/NOPB DSBGA YPB 4 3000 210.0 185.0 35.0 LMV1012UP-07/NOPB DSBGA YPC 4 250 210.0 185.0 35.0 LMV1012UP-15/NOPB DSBGA YPC 4 250 210.0 185.0 35.0 LMV1012UP-20/NOPB DSBGA YPC 4 250 210.0 185.0 35.0 LMV1012UP-25/NOPB DSBGA YPC 4 250 210.0 185.0 35.0 Pack Materials-Page 2 MECHANICAL DATA YPB0004 0.5±0.045 D E TPA04XXX (Rev B) D: Max = 1.057 mm, Min =0.996 mm E: Max = 0.981 mm, Min = 0.92 mm 4215097/A NOTES: A. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994. B. This drawing is subject to change without notice. www.ti.com 12/12 MECHANICAL DATA YPC0004 D 0.350±0.045 E UPA04XXX (Rev C) D: Max = 1.057 mm, Min =0.996 mm E: Max = 0.981 mm, Min = 0.92 mm 4215139/A NOTES: A. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994. B. This drawing is subject to change without notice. www.ti.com 12/12 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. 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