SavantIC Semiconductor Product Specification BD241/A/B/C Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD242/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BD241 VCBO VCEO VEBO Collector-base voltage Collector-emitter voltage Emitter-base voltage BD241A VALUE 55 Open emitter 70 BD241B 90 BD241C 115 BD241 45 BD241A UNIT Open base 60 BD241B 80 BD241C 100 Open collector V V 5 V IC Collector current 3 A ICM Collector current-peak 5 A IB Base current 1 A PC Collector power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification BD241/A/B/C Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCEsat PARAMETER Collector-emitter sustaining voltage CONDITIONS MIN BD241 45 BD241A 60 TYP. MAX IC=30mA; IB=0 UNIT V BD241B 80 BD241C 100 Collector-emitter saturation voltage IC=3A;IB=0.6 A 1.2 V VBE Base-emitter on voltage IC=3A ; VCE=4V 1.8 V ICEO Collector cut-off current 0.3 mA 0.2 mA 1 mA ICES BD241/A VCE=30V; IB=0 BD241B/C VCE=60V; IB=0 BD241 VCE=45V; VBE=0 BD241A VCE=60V; VBE=0 BD241B VCE=80V; VBE=0 BD241C VCE=100V; VBE=0 Collector cut-off current IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=1A ; VCE=4V 25 hFE-2 DC current gain IC=3A ; VCE=4V 10 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 BD241/A/B/C