N-Channel MOSFET 600V, 11A, 0.55Ω Features The MDF11N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF11N60 is suitable device for SMPS, high Speed switching and general purpose applications. D VDS = 600V VDS = 660V ID = 11A RDS(ON) ≤ 0.55Ω @ Tjmax @ VGS = 10V @ VGS = 10V Applications G N-channel MOSFET 600V General Description Power Supply PFC High Current, High Speed Switching S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Symbol Rating Unit VDSS 600 V VDSS @ Tjmax 660 V VGSS ±30 V 11 A 6.9 A o TC=25 C Continuous Drain Current (※) o TC=100 C Pulsed Drain Current (1) IDM TC=25oC Power Dissipation Derate above 25 oC Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy ID PD dv/dt (4) Junction and Storage Temperature Range 44 A 49 W 0.39 W/ oC 4.5 V/ns mJ EAS 720 TJ, Tstg -55~150 Symbol Rating RθJA 62.5 RθJC 2.55 o C ※ Id limited by maximum junction temperature Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Jun 2011 Version 2.3 (1) (1) 1 MDF11N60 MDF11N60 Unit o C/W MagnaChip Semiconductor Ltd. Part Number Temp. Range MDF11N60TH o -55~150 C Package Packing RoHS Status TO-220F Tube Halogen Free Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 600 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 3.0 - 5.0 Drain Cut-Off Current IDSS VDS = 600V, VGS = 0V - - 1 μA Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA RDS(ON) VGS = 10V, ID = 5.5A - 0.45 0.55 Ω gfs VDS = 30V, ID = 5.5A - 13 - S - 38.4 - Drain-Source ON Resistance Forward Transconductance V Dynamic Characteristics Total Gate Charge Qg VDS = 480V, ID = 11A, VGS = 10V (3) Gate-Source Charge Qgs - 11.2 - Gate-Drain Charge Qgd - 14 - Input Capacitance Ciss - 1700 - Reverse Transfer Capacitance Crss - 6.2 - VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Output Capacitance Coss - 184 - Turn-On Delay Time td(on) - 38 - - 50 - - 76 - tf - 33 - Maximum Continuous Drain to Source Diode Forward Current IS - 11 - A Source-Drain Diode Forward Voltage VSD - - 1.4 V - 430 - ns - 4.0 - μC Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 10V, VDS = 300V, ID = 11A, RG = 25Ω(3) ns Drain-Source Body Diode Characteristics Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 11A, VGS = 0V IF = 11A, dl/dt = 100A/μs(3) Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤11A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C 4. L=10.9mH, IAS=11A, VDD=50V, Rg =25Ω, Starting TJ=25°C Jun 2011 Version 2.3 2 MagnaChip Semiconductor Ltd. N-channel MOSFET 600V Electrical Characteristics (Ta = 25oC) MDF11N60 Ordering Information 1.0 Notes 1. 250㎲ Pulse Test 2. TC=25 0.8 RDS(ON) [Ω ] 20 0.9 ℃ 15 10 0.7 VGS=20V VGS=10.0V 0.6 0.5 5 0.4 5 10 15 20 25 0 5 10 VDS,Drain-Source Voltage [V] 20 25 30 ID,Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.2 3.0 ※ Notes : BVDSS, (Normalized) Drain-Source Breakdown Voltage ※ Notes : RDS(ON), (Normalized) Drain-Source On-Resistance 15 1. VGS = 10 V 2. ID = 5.5 A 2.5 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 1. VGS = 0 V 2. 250 s Pulse Test 1.1 1.0 0.9 0.8 -50 200 0 50 ※ Notes : IDR Reverse Drain Current [A] 1. VGS = 0 V 2. ID = 250㎂ 10 ID [A] 200 Fig.4 Breakdown Voltage Variation vs. Temperature * Notes ; 1. VDS=30V 150 ℃ -55 25 ℃ ℃ 1 4 6 8 10 150 ℃ 10 25 ℃ 1 0.1 0.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain Voltage [V] VGS [V] Fig.5 Transfer Characteristics Jun 2011 Version 2.3 150 TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature 2 100 o o TJ, Junction Temperature [ C] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. N-channel MOSFET 600V Vgs=5.5V =6.0V =6.5V =7.0V =8.0V =10.0V =15.0V 25 ID,Drain Current [A] MDF11N60 30 120V Capacitance [pF] 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 Ciss ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 1 Fig.7 Gate Charge Characteristics 10 2 Fig.8 Capacitance Characteristics Operation in This Area is Limited by R DS(on) 14 10 s 100 s 1 12 1 ms ID, Drain Current [A] ID, Drain Current [A] 10 10 ms 100 ms 10 10 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 0 DC 1s -1 Single Pulse TJ=Max rated TC=25 10 8 6 4 2 ℃ 10 -2 10 -1 10 0 10 1 10 0 25 2 50 75 100 125 TC, Case Temperature [ VDS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area ℃ 150 ] Fig.10 Maximum Drain Current vs. Case Temperature 16000 1 10 single Pulse RthJC = 2.55 /W TC = 25 14000 ℃ ℃ 0 10 10000 Power (W) Zθ JC(t), Thermal Response 12000 D=0.5 0.2 0.1 -1 10 0.02 Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JC=2.55 /W 2000 ℃ 0.01 single pulse 0 1E-5 -2 10 -5 10 6000 4000 ※ Notes : 0.05 8000 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Rectangular Pulse Duration [sec] 1E-3 0.01 0.1 1 10 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation Fig.11 Transient Thermal Response Curve Jun 2011 Version 2.3 1E-4 4 MagnaChip Semiconductor Ltd. N-channel MOSFET 600V VGS, Gate-Source Voltage [V] 300V 480V 8 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss MDF11N60 4000 3800 3600 3400 3200 3000 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0.1 ※ Note : ID = 11A 10 MDF11N60 Physical Dimensions N-channel MOSFET 600V 3 Leads, TO-220F Dimensions are in millimeters unless otherwise specified Symbol A b b1 C D E e F G L L1 Q Q1 ￠R Jun 2011 Version 2.3 Min 4.50 0.63 1.15 0.33 15.47 9.60 Nom Max 4.93 0.91 1.47 0.63 16.13 10.71 2.54 2.34 6.48 12.24 2.79 2.52 3.10 3.00 2.84 6.90 13.72 3.67 2.96 3.50 3.55 5 MagnaChip Semiconductor Ltd. MDF11N60 N-channel MOSFET 600V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Jun 2011 Version 2.3 6 MagnaChip Semiconductor Ltd.