FDZ493P tm P-Channel 2.5V Specified PowerTrench® BGA MOSFET –20V, –4.6A, 46mΩ Features General Description Combining Fairchild's advanced 2.5V specified PowerTrench® process with state of the art BGA packaging process, the FDZ493P minimizes both PCB space and rDS(on). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handing capability,ultra-low profile packaging, low gate charge, and low rDS(on). Max rDS(on) = 46mΩ at VGS = –4.5V, ID = –4.6A Max rDS(on) = 72mΩ at VGS = –2.5V, ID = –3.6A Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of SSOT-6. Ultra-thin package: less than 0.80 mm height when mounted to PCB. Application Outstanding thermal transfer characteristics:4 times better than SSOT-6. Battery management Ultra-low Qg x rDS(on) figure-of-merit. Load switch RoHS Compliant. Battery protection S GATE G D TOP BOTTOM MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TA = 25°C (Note 1a) Ratings –20 Units V ±12 V –4.6 –10 -Pulsed PD Power Dissipation TJ, TSTG Operating and Storage Junction Temperature Range TA = 25°C (Note 1a) A 1.7 W –55 to +150 °C 72 °C/W Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) Package Marking and Ordering Information Device Marking E ©2006 Fairchild Semiconductor Corporation FDZ493P Rev.B(W) Device FDZ493P Reel Size 7’’ 1 Tape Width 8mm Quantity 3000 units www.fairchildsemi.com FDZ493P P-Channel 2.5V Specified PowerTrench® BGA MOSFET November 2006 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = –250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient –20 ID = –250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = –16V, VGS = 0V –1 µA IGSS Gate to Source Leakage Current VGS = ±12V, VDS = 0V ±100 nA –1.5 V V mV/°C –13 On Characteristics (note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = –250µA, referenced to 25°C 3 VGS = –4.5V, ID = –4.6A 36 46 rDS(on) Drain to Source On Resistance VGS = –2.5V, ID = –3.6A 58 72 VGS = –4.5V, ID = –4.6A,TJ=125°C 47 65 ID(on) On to State Drain Current VGS = –4.5V, VDS = –5V gFS Forward Transconductance VDS = –5V, ID = –4.6A –0.6 –0.8 mV/°C –10 mΩ A 13 S 754 pF 167 pF 92 pF f = 1MHz 6 Ω VDD = –10V, ID = –1A VGS = –4.5V, RGEN = 6Ω 11 20 ns 10 20 ns 22 35 ns 17 31 ns 7.5 11 nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = –10V, VGS = 0V, f = 1MHz Switching Characteristics (note 2) td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = –10V ,ID = –4.6A VGS = –4.5V 1.5 nC 2.0 nC Drain-Source Diode Characteristics IS Maximum continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = –1.4A –1.4 (Note 2) IF = –4.6A, di/dt = 100A/µs –0.7 –1.2 A V 17 ns 5 nC Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB is defined for reference. For RθJC the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design. a. 72°C/W when mounted on a 1 in2 pad of 2 oz copper,1.5” X 1.5” X 0.062” thick PCB b. 157°C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. FDZ493P Rev.B(W) 2 www.fairchildsemi.com FDZ493P P-Channel 2.5V Specified PowerTrench® BGA MOSFET Electrical Characteristics TA = 25°C unless otherwise noted 10 8 VGS = -3.5V VGS = -2.0V rDS(ON), NORMALIZED -ID, DRAIN CURRENT (A) VGS = -3.0V 6 VGS = -4.5V 4 2 0 0.0 PULSE DURATION = 300µs DUTY CYCLE = 2%MAX 0.5 1.0 -VDS, DRAIN TO SOURCE VOLTAGE (V) DRAIN TO SOURCE ON-RESISTANCE 2.6 VGS = -2.5V 2.2 VGS = - 3.5V 1.0 0.6 1.5 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) rDS(ON),NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 0.8 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 8 10 -IS, REVERSE DRAIN CURRENT (A) 8 6 4 TJ = 25oC TJ = -55oC 100 TJ = 125oC 50 TJ = 25oC 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 5 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 300µs DUTY CYCLE = 2%MAX TJ = 125oC PULSE DURATION = 300µs DUTY CYCLE = 2%MAX 150 1 10 -ID, DRAIN CURRENT (A) 2 4 6 -ID, DRAIN CURRENT(A) ID = -2.3A 150 Figure 3. Normalized On Resistance vs Junction Temperature VDS=-5V 1.0 1.5 2.0 -VGS, GATE TO SOURCE VOLTAGE (V) 2.5 Figure 5. Transfer Characteristics FDZ493P Rev.B(W) 0 200 ID = -4.6A VGS = -4.5V 1.0 0 0.5 VGS = -4.5V Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.2 2 VGS = -3.0V 1.4 1.6 0.6 -50 VGS = -2.5V 1.8 Figure 1. On Region Characteristics 1.4 PULSE DURATION = 300µs DUTY CYCLE = 2%MAX VGS = -2.0V 10 VGS = 0V 1 0.1 0.01 1E-3 1E-4 0.0 TJ = 125oC TJ = 25oC TJ = -55oC 0.2 0.4 0.6 0.8 1.0 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDZ493P P-Channel 2.5V Specified PowerTrench® BGA MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2000 VDD = -10V 4 3 VDD = -5V VDD = -15V 2 1 0 0 2 4 6 Qg, GATE CHARGE(nC) 8 Coss Crss 100 40 0.1 10 Figure 7. Gate Charge Characteristics 30 P(PK), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) rDS(on) LIMIT 10 100us 1ms 10ms 1 100ms VGS = -4.5V SINGLE PULSE Rthja = 157OC/W TA = 25OC 0.01 0.1 1s 10s DC 1 10 -VDS, DRAIN to SOURCE VOLTAGE (V) 50 Figure 9. Forward Bias Safe Operating Area NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 f = 1MHz VGS = 0V SINGLE PULSE O Rthja = 157 C/W VGS = -4.5V 25 TA = 25oC 20 FOR TEMPERATURES ABOVE 25oC DERATE PEAK 15 CURRENT AS FOLLOWS: 150 – T A -----------------------125 I = I25 10 5 0 -2 10 -1 0 10 1 10 10 t, PULSE WIDTH (s) 2 3 10 10 Figure 10. Single Pulse Maximum Power Dissipation DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE 1E-3 -4 10 20 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage 50 0.1 Ciss 1000 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 5 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 11. Transient Thermal Response Curve FDZ493P Rev.B(W) 4 www.fairchildsemi.com FDZ493P P-Channel 2.5V Specified PowerTrench® BGA MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDZ493P P-Channel 2.5V Specified PowerTrench® BGA MOSFET Dimensional Pad and Layout FDZ493P Rev.B(W) 5 www.fairchildsemi.com FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I21