FDC8886 N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ Features General Description Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance. Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A High performance trench technology for extremely low rDS(on) Fast switching speed Application RoHS Compliant Primary Switch S D S 4 3 G D 5 2 D D 6 1 D D G D Pin 1 D SuperSOTTM -6 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 3) Drain Current -Continuous (Package limited) TC = 25 °C ID TA = 25 °C -Continuous TJ, TSTG Units V ±20 V 8.0 (Note 1a) -Pulsed PD Ratings 30 6.5 A 25 Power Dissipation (Note 1a) 1.6 Power Dissipation (Note 1b) 0.8 Operating and Storage Junction Temperature Range -55 to +150 W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 30 (Note 1a) 78 °C/W Package Marking and Ordering Information Device Marking .886 Device FDC8886 ©2012 Fairchild Semiconductor Corporation FDC8886 Rev.C3 Package SSOT-6 Reel Size 7 ’’ 1 Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDC8886 N-Channel Power Trench® MOSFET January 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 30 V 18 mV/°C 1 μA 100 nA 3.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 6.5 A 19 23 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 6.0 A 30 36 VGS = 10 V, ID = 6.5 A, TJ = 125 °C 25 30 VDD = 5 V, ID = 6.5 A 24 gFS Forward Transconductance 1.2 1.9 -6 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 348 465 135 180 pF pF 16 25 pF Ω 1.2 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) VDD = 15 V, ID = 6.5 A, VGS = 10 V, RGEN = 6 Ω 5 10 ns 1 10 ns 11 19 ns 1 10 ns nC Total Gate Charge VGS = 0 V to 10 V 5.3 7.4 Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V ID = 6.5 A 2.5 3.5 Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge nC 1.0 nC 0.8 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 6.5 A (Note 2) IF = 6.5 A, di/dt = 100 A/μs 0.86 1.2 V 14 22 ns 3 10 nC NOTES: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 78 °C/W when mounted on a 1 in2 pad of 2 oz copper b.175 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. ©2012 Fairchild Semiconductor Corporation FDC8886 Rev.C3 2 www.fairchildsemi.com FDC8886 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 3.5 VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 25 VGS = 6 V VGS = 4.5 V 20 VGS = 4 V 15 10 VGS = 3.5 V 5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 0.4 0.8 1.2 1.6 2.0 VGS = 3.5 V 3.0 VGS = 4 V 2.5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 2.0 VGS = 4.5 V 1.5 VGS = 6 V 1.0 0.5 VGS = 10 V 0 5 Figure 1. On Region Characteristics rDS(on), DRAIN TO 1.2 1.1 1.0 0.9 0.8 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.3 -50 25 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 40 TJ = 125 oC 20 TJ = 25 oC 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 30 25 20 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) ID = 6.5 A 0 100 125 150 TJ, JUNCTION TEMPERATURE (oC) VDS = 5 V 15 TJ = 150 oC 10 TJ = 25 oC 5 TJ = -55 oC 0 20 80 ID = 6.5 A VGS = 10 V 0.7 -75 15 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.5 1.4 10 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 1 2 3 4 TJ = 150 oC 1 TJ = 25 oC TJ = -55 oC 0.1 0.01 0.2 5 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDC8886 Rev.C3 VGS = 0 V 10 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDC8886 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 500 ID = 6.5 A VDD = 10 V Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 15 V 6 VDD = 20 V 4 100 Coss 2 0 f = 1 MHz VGS = 0 V 0 1 2 3 4 5 6 1 Figure 7. Gate Charge Characteristics 30 Figure 8. Capacitance vs Drain to Source Voltage 8 7 6 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 5 TJ = 100 oC 4 3 TJ = 125 oC 2 6 VGS = 10 V 4 VGS = 4.5 V 2 o RθJA = 78 C/W 1 0.01 0.1 1 0 25 5 50 125 150 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 30 P(PK), PEAK TRANSIENT POWER (W) 200 10 100 μs 1 THIS AREA IS LIMITED BY rDS(on) 1 ms 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s DC RθJA = 175 oC/W TA = 25 oC 0.01 0.01 100 o Figure 9. Unclamped Inductive Switching Capability 0.1 75 TA, AMBIENT TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss 10 0.1 0.1 1 10 100200 TA = 25 oC 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 3 10 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDC8886 Rev.C3 SINGLE PULSE RθJA = 175 oC/W 100 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDC8886 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 175 C/W 0.01 0.005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDC8886 Rev.C3 5 www.fairchildsemi.com FDC8886 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDC8886 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDC8886 Rev.C3 6 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Definition Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 ©2012 Fairchild Semiconductor Corporation FDC8886 Rev.C3 7 www.fairchildsemi.com FDC8886 N-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ F-PFS™ PowerTrench® The Power Franchise® ® PowerXS™ AccuPower™ FRFET® Global Power ResourceSM Programmable Active Droop™ AX-CAP™* Green Bridge™ QFET® BitSiC® TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Quiet Series™ Green FPS™ e-Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® CROSSVOLT™ GTO™ ™ TINYOPTO™ CTL™ IntelliMAX™ TinyPower™ Saving our world, 1mW/W/kW at a time™ Current Transfer Logic™ ISOPLANAR™ TinyPWM™ DEUXPEED® Marking Small Speakers Sound Louder SignalWise™ TinyWire™ Dual Cool™ SmartMax™ and Better™ TranSiC® EcoSPARK® SMART START™ MegaBuck™ TriFault Detect™ EfficentMax™ Solutions for Your Success™ MICROCOUPLER™ TRUECURRENT®* ESBC™ SPM® MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ SuperSOT™-3 MillerDrive™ Fairchild® UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® VisualMax™ Sync-Lock™ OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® ®* FETBench™ XS™ FlashWriter® * ® FPS™