Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES BYQ28F, BYQ28EX series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Isolated mounting tab VF ≤ 0.895 V a2 3 a1 1 IO(AV) = 10 A k 2 IRRM = 0.2 A trr ≤ 25 ns GENERAL DESCRIPTION Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYQ28F series is supplied in the SOT186 package. The BYQ28EX series is supplied in the SOT186A package. PINNING SOT186 PIN SOT186A DESCRIPTION case case 1 anode 1 (a) 2 cathode (k) 3 anode 2 (a) tab 1 2 3 1 2 3 isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. BYQ28F / BYQ28EX VRRM VRWM VR Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage IO(AV) Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode IFRM IFSM IRRM IRSM Tstg Tj Ths ≤ 148˚C square wave δ = 0.5; Ths ≤ 92 ˚C t = 25 µs; δ = 0.5; Ths ≤ 92 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Storage temperature Operating junction temperature - MAX. -150 150 150 150 UNIT -200 200 200 200 V V V - 10 A - 10 A - 50 55 A A - 0.2 A - 0.2 A -40 - 150 150 ˚C ˚C 1 Neglecting switching and reverse current losses October 1998 1 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ28F, BYQ28EX series ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model; C = 250 pF; R = 1.5 kΩ MIN. MAX. UNIT - 8 kV ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER Visol Peak isolation voltage from all terminals to external heatsink Visol Cisol CONDITIONS MIN. SOT186 package; R.H. ≤ 65%; clean and dustfree TYP. MAX. UNIT - - 1500 V R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz; all terminals to external sinusoidal waveform; R.H. ≤ 65%; clean heatsink and dustfree - - 2500 V Capacitance from pin 2 to external heatsink - 10 - pF MIN. TYP. MAX. UNIT - 55 5.7 6.7 - K/W K/W K/W MIN. TYP. MAX. UNIT - 0.80 0.95 1.10 0.1 2 4 15 0.895 1.10 1.25 0.2 10 9 25 V V V mA µA nC ns - 10 0.5 1 20 0.7 - ns A V f = 1 MHz THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink Thermal resistance junction to ambient with heatsink compound without heatsink compound in free air Rth j-a ELECTRICAL CHARACTERISTICS characteristics are per diode at Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current Qs trr1 Reverse recovery charge Reverse recovery time trr2 Irrm Vfr Reverse recovery time Peak reverse recovery current Forward recovery voltage IF = 5 A; Tj = 150˚C IF = 5 A IF = 10 A VR = VRWM; Tj = 100 ˚C VR = VRWM IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 5 A; VR ≥ 30 V; -dIF/dt = 50 A/µs IF = 1 A; dIF/dt = 10 A/µs October 1998 2 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged I dI F BYQ28F, BYQ28EX series 0.5A F dt IF t 0A rr time Q 10% s I rec = 0.25A IR 100% trr2 I I R rrm I = 1A R Fig.1. Definition of trr1, Qs and Irrm I Fig.4. Definition of trr2 8 F PF / W Ths(max) / C BYQ28 Vo = 0.748 V D = 1.0 Rs = 0.0293 Ohms 7 110.1 115.8 6 0.5 5 time 127.2 0.1 3 132.9 fr tp I 2 V 121.5 0.2 4 VF D= 1 0 time Fig.2. Definition of Vfr 0 1 2 3 4 IF(AV) / A 5 tp T 138.6 144.3 t T VF 104.4 6 150 8 7 Fig.5. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. R 6 PF / W Ths(max) / C BYQ28 Vo = 0.748 V Rs = 0.0293 Ohms a = 1.57 5 115.8 121.5 1.9 D.U.T. 2.2 4 Voltage Pulse Source 4 3 Current shunt to ’scope Fig.3. Circuit schematic for trr2 132.9 2 138.6 1 144.3 0 October 1998 127.2 2.8 0 1 2 3 IF(AV) / A 4 5 150 6 Fig.6. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). 3 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ28F, BYQ28EX series trr / ns 1000 Qs / nC 100 IF=5A IF=2A IF=1A 100 IF=5A 10 IF=1A 10 1 1.0 1 0.1 100 10 dIF/dt (A/us) Fig.7. Maximum trr at Tj = 25 ˚C; per diode 10 -dIF/dt (A/us) 100 Fig.10. Maximum Qs at Tj = 25 ˚C; per diode Irrm / A 10 1.0 10 Transient thermal impedance, Zth j-hs (K/W) 1 1 IF=5A 0.1 0.1 IF=1A PD 0.01 0.01 10 -dIF/dt (A/us) 1 0.001 1us 100 Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode 15 tp D= T 10us tp T t 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) BYQ28F/EX Fig.11. Transient thermal impedance; per diode; Zth j-hs = f(tp). BYQ28 IF / A Tj=150C Tj=25C 10 5 max typ 0 0 0.5 VF / V 1 1.5 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj October 1998 4 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ28F, BYQ28EX series MECHANICAL DATA Dimensions in mm 10.2 max 5.7 max 3.2 3.0 Net Mass: 2 g 4.4 max 0.9 0.5 2.9 max 4.4 4.0 7.9 7.5 17 max seating plane 3.5 max not tinned 4.4 13.5 min 1 0.4 2 3 0.9 0.7 M 0.55 max 2.54 1.3 5.08 top view Fig.12. SOT186; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1998 5 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ28F, BYQ28EX series MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max 2.8 Recesses (2x) 2.5 0.8 max. depth 6.4 15.8 19 max. max. 15.8 max seating plane 3 max. not tinned 3 2.5 13.5 min. 1 0.4 2 3 M 1.0 (2x) 0.6 2.54 0.9 0.7 0.5 2.5 5.08 1.3 Fig.13. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1998 6 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ28F, BYQ28EX series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1998 7 Rev 1.300