Fairchild J110 N-channel switch Datasheet

N-Channel Switch
3
• This device is designed for digital switching
applications where very low on resistance is
mandatory.
• Sourced from Process 58.
2
TO-92
1
1. Drain 2. Source 3. Gate
1
SuperSOT-3
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings * TA=25°C unless otherwise noted
Symbol
VDG
Drain-Gate Voltage
Parameter
Value
25
Units
V
VGS
Gate-Source Voltage
-25
V
IGF
Forward Gate Current
10
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Gate-Source Breakdwon Voltage
V(BR)GSS
Test Condition
Min.
IG = -10µA, VDS = 0
Typ.
Max.
Units
-3.0
-200
nA
nA
-10
-6.0
-4.0
V
V
V
-25
IGSS
Gate Reverse Current
VGS = -15V, VDS = 0
VGS = -15V, VDS = 0, TA = 100°C
VGS(off)
Gate-Source Cutoff Voltage
VDS = 15V, ID = 10nA
108
109
110
-3.0
-2.0
-0.5
80
40
10
V
On Characteristics
IDSS
Zero-Gate Voltage Drain Current *
VDS = 15V, IGS = 0
108
109
110
rDS(on)
Drain-Source On Resistance
VDS ≤ 0.1V, VGS = 0
108
109
110
mA
mA
mA
8.0
12
18
Ω
Ω
Ω
Small Signal Characteristics
Cdg(on)
Csg(off)
Drain Gate & Source Gate On
Capacitance
VDS = 0, VGS = 0, f = 1.0MHz
85
pF
Cdg(on)
Drain-Gate Off Capacitance
VDS = 0, VGS = -10, f = 1.0MHz
15
pF
Csg(off)
Source-Gate Off Capacitance
VDS = 0, VGS = -10, f = 1.0MHz
15
pF
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
©2002 Fairchild Semiconductor Corporation
Rev. B, July 2002
J108/J109/J110/MMBFJ108
J108/J109/J110/MMBFJ108
Symbol
Parameter
Max.
J108 - 110
625
5.0
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
125
RθJA
Thermal Resistance, Junction to Ambient
357
*MMBFJ108
350
2.8
Units
mW
mW/°C
°C/W
556
°C/W
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06"
©2002 Fairchild Semiconductor Corporation
Rev. B, July 2002
J108/J109/J110/MMBFJ108
Thermal Characteristics TA=25°C unless otherwise noted
Ω)
r DS - DRAIN "ON" RESISTANCE (Ω
- 3.0 V
60
40
- 4.0 V
캜
T A = 25캜
°C
20
TYP V GS(off) = - 5.0 V
I
D
- 1.0 V
- 5.0 V
0
0
0.4
0.8
1.2
1.6
VDS - DRAIN-SOURCE VOLTAGE (V)
r DS @ V DS = 100mV, V GS = 0
50
V GS(off) @ V DS = 5.0V, I
100
50
5
I DSS
10
_
_
_
0.5
1
5
10
- GATE CUTOFF VOLTAGE (V)
_
0.1
VGS (OFF)
Figure 2. Parameter Interactions
50
100
- DRAIN CURRENT (mA)
f = 0.1 - 1.0 MHz
C iss (V DS = 5.0V)
10
D
C rss (VDS = 0 )
캜
T A = 25캜
°C
TYP V GS(off) = - 0.7 V
40
30
V GS = 0 V
20
- 0.1 V
- 0.2 V
- 0.3 V
- 0.4 V - 0.5 V
10
I
C ts (C rs ) - CAPACITANCE (pF)
500
= 3.0 nA
r DS
Figure 1. Common Drain-Source
0
-4
-8
-12
-16
V GS - GATE-SOURCE VOLTAGE (V)
0
-20
0
100
50
20
10
V GS(off) @ 5.0V, 10 µA
r DS
r DS =
V GS
1 -________
V GS(off)
5
2
1
0
0.2
0.4
0.6
0.8
1
VGS /VGS(off)- NORMALIZED GATE-SOURCE VOLTAGE (V)
Figure 5. Normalized Drain Resistance vs
Bias Voltage
©2002 Fairchild Semiconductor Corporation
1
2
3
4
VDS - DRAIN-SOURCE VOLTAGE (V)
5
Figure 4. Common Drain-Source
e n - NOISE VOLTAGE (nV / √ Hz)
Figure 3. Common Drain-Source
r DS - NORMALIZED RESISTANCE
D
10
_
2
1,000
I DSS @ V DS = 5.0V, V GS = 0 PULSED
DRAIN CURRENT (mA)
80
100
DSS -
- 2.0 V
V GS = 0 V
I
- DRAIN CURRENT (mA)
100
100
50
V DG = 10V
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.21 @ f ≥ 1.0 kHz
10
5
I D = 1.0 mA
I D = 10 mA
1
0.01 0.03
0.1
0.5 1 2
10
f - FREQUENCY (kHz)
100
Figure 6. Noise Voltage vs Frequency
Rev. B, July 2002
J108/J109/J110/MMBFJ108
Typical Characteristics
J108/J109/J110/MMBFJ108
Typical Characteristics (Continued)
50
TA = 25캜
°캜
C
TURN-OFF TIME (ns)
t ON - TURN-ON TIME (ns)
10
VDD = 1.5V
8
V GS(off) = - 12V
6
I D = 30 mA
4
OFF-
I D = 10 mA
V GS(off) = - 8.5V
V GS(off) = - 5.5V
30
V GS(off) = - 3.5V
20
캜
TA = 25캜
°C
VDD = 1.5V
10
V GS(off) = - 12V
t
2
40
0
-2
-4
-6
-8
-10
VGS(off) - GATE-SOURCE CUTOFF VOLTAGE (V)
Ω)
r DS - DRAIN "ON" RESISTANCE (Ω
Figure 7. Switching Turn-On Time vs
Gate-Source Cutoff Voltage
V GS = 0
50
V GS(off) = - 3.0V
캜
125캜
°C
캜
°C
125캜
10
캜
°C
25캜
5
°캜
C
- 55캜
V GS(off) = - 5.0V
25캜
°캜
C
1
10
I D - DRAIN CURRENT (mA)
100
캜
T A = 25캜
°C
캜
T A = - 55캜
°C
V DG = 10V
캜
°C
T A = 25캜
f = 1.0 kHz
캜
°C
T A = 125캜
V GS(off) = - 1.0V
V GS(off) = - 3.0V
V GS(off) = - 5.0V
1
I D - DRAIN CURRENT (mA)
10
Figure 11. Transconductance vs Drain Current
©2002 Fairchild Semiconductor Corporation
10
15
20
I D - DRAIN CURRENT (mA)
25
V DG = 5.0V
10V
V GS(off)
5.0V
15V
20V
- 4.0V
10V
10
5.0V
15V
20V
10V
15V
- 2.0V
20V
캜
T A = 25캜
°C
f = 1.0 kHz
- 1.0V
1
0.1
1
I D - DRAIN CURRENT (mA)
10
Figure 10. Output Conductance vs Drain Current
10
1
0.1
5
100
PD - P O W E R D IS S IP A T IO N (m W )
g fs - TRANSCONDUCTANCE (mmhos)
Figure 9. On Resistance vs Drain Current
100
0
Figure 8. Switching Turn-On Time vs Drain Current
100
1
0
g os - OUTPUT CONDUCTANCE ( µ mhos)
0
700
600
500
T O -9 2
S u p e rS O T -3
400
300
200
100
0
0
25
50
75
100
125
150
o
TEM PERATURE ( C)
Figure 12. Power Dissipation vs Ambient Temperature
Rev. B, July 2002
J108/J109/J110/MMBFJ108
Package Demensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B, July 2002
J108/J109/J110/MMBFJ108
Package Demensions (Continued)
SuperSOT-3
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B, July 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I1
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