MC10E104, MC100E104 5 V ECL Quint 2‐Input AND/NAND Gate Description The MC10E/100E104 is a quint 2-input AND/NAND gate. The function output F is the OR of all five AND gate outputs, while F is the NOR. The Q outputs need not be terminated if only the F outputs are to be used. The 100 Series contains temperature compensation. www.onsemi.com Features • 600 ps Max. Propagation Delay • OR/NOR Function Outputs • PECL Mode Operating Range: VCC = 4.2 V to 5.7 V • PLCC−28 FN SUFFIX CASE 776−02 with VEE = 0 V NECL Mode Operating Range: VCC = 0 V with VEE = −4.2 V to −5.7 V Internal Input 50 kW Pulldown Resistors MARKING DIAGRAM* 1 • • ESD Protection: > 2 kV Human Body Model ♦ > 200 V Machine Model Meets or Exceeds JEDEC Spec EIA/JESD78 IC Latchup Test Moisture Sensitivity: Level 3 (Pb-Free) (For Additional Information, see Application Note AND8003/D) Flammability Rating: UL 94 V−0 @ 0.125 in, Oxygen Index: 28 to 34 Transistor Count = 134 Devices MCxxxE104G ♦ • • • • • These Devices are Pb-Free, Halogen Free and are RoHS Compliant AWLYYWW xxx A WL YY WW G = 10 or 100 = Assembly Location = Wafer Lot = Year = Work Week = Pb-Free Package *For additional marking information, refer to Application Note AND8002/D. ORDERING INFORMATION Device Package Shipping† MC10E104FNG PLCC−28 (Pb-Free) 37 Units / Tube MC10E104FNR2G PLCC−28 (Pb-Free) 500 Tape & Reel MC100E104FNR2G PLCC−28 (Pb-Free) 500 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 July, 2016 − Rev. 8 1 Publication Order Number: MC10E104/D MC10E104, MC100E104 D3a D4b D4a NC VCCO F F 25 24 22 21 20 19 23 D3b 26 18 Q4 D2a 27 17 Q4 D2b VEE 28 16 VCC 1 15 Q3 D1a 2 14 Q3 D1b 3 13 Q2 D0a 4 12 Q2 5 6 7 8 9 10 F F 11 D0b VCCO Q0 Q0 Q1 Q1 VCCO All VCC and VCCO pins are tied together on the die. Warning: All VCC, VCCO, and VEE pins must be externally connected to Power Supply to guarantee proper operation. Table 1. PIN DESCRIPTION FUNCTION D0a − D4b ECL Data Inputs Q0 − Q4 ECL AND Outputs Q0 − Q4 ECL NAND Outputs F ECL OR Output F ECL NOR Output VCC, VCCO Positive Supply VEE Negative Supply NC No Connect Table 2. FUNCTION OUTPUTS F= Q0 D0b Q0 D1a Q1 D1b Q1 D2a Q2 D2b Q2 D3a Q3 D3b Q3 D4a Q4 D4b Q4 Figure 2. Logic Diagram Figure 1. 28-Lead Pinout (Top View) PIN D0a (D0a • D0b) + (D1a • D1b) + (D2a • D2b) + (D3a • D3b) + (D4a • D4b) www.onsemi.com 2 MC10E104, MC100E104 Table 3. MAXIMUM RATINGS Symbol Rating Unit VCC PECL Mode Power Supply Parameter VEE = 0 V Condition 1 Condition 2 8 V VEE NECL Mode Power Supply VCC = 0 V −6 V VI PECL Mode Input Voltage NECL Mode Input Voltage VEE = 0 V VCC = 0 V 6 −6 V Iout Output Current Continuous Surge 50 100 mA TA Operating Temperature Range 0 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm 500 lfpm PLCC−28 PLCC−28 63.5 43.5 °C/W qJC Thermal Resistance (Junction-to-Case) Standard Board PLCC−28 22 to 26 °C/W Tsol Wave Solder (Pb-Free) 265 °C VI ≤ VCC VI ≥ VEE Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Table 4. 10E SERIES PECL DC CHARACTERISTICS (VCC = 5.0 V, VEE = 0.0 V (Note 1)) −40°C Symbol Characteristic Min Typ 25°C Max Min Typ 85°C Max Min Typ Max Unit IEE Power Supply Current 38 46 38 46 38 46 mA VOH Output HIGH Voltage (Note 2) 3980 4070 4160 4020 4105 4190 4090 4185 4280 mV VOL Output LOW Voltage (Note 2) 3050 3210 3370 3050 3210 3370 3050 3227 3405 mV VIH Input HIGH Voltage 3830 3995 4160 3870 4030 4190 3940 4110 4280 mV VIL Input LOW Voltage 3050 3285 3520 3050 3285 3520 3050 3302 3555 mV IIH Input HIGH Current 200 mA 200 200 NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. Input and output parameters vary 1:1 with VCC. VEE can vary −0.46 V / +0.06 V. 2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V. Table 5. 10E SERIES NECL DC CHARACTERISTICS (VCCx = 0.0 V; VEE = −5.0 V (Note 1)) −40°C Symbol Characteristic Min Typ 25°C Max Min Typ 85°C Max Min Typ Max Unit IEE Power Supply Current 38 46 38 46 38 46 mA VOH Output HIGH Voltage (Note 2) −1020 −930 −840 −980 −895 −810 −910 −815 −720 mV VOL Output LOW Voltage (Note 2) −1950 −1790 −1630 −1950 −1790 −1630 −1950 −1773 −1595 mV VIH Input HIGH Voltage −1170 −1005 −840 −1130 −970 −810 −1060 −890 −720 mV VIL Input LOW Voltage −1950 −1715 −1480 −1950 −1715 −1480 −1950 −1698 −1445 mV IIH Input HIGH Current 200 mA IIL Input LOW Current 200 0.5 0.3 200 0.5 0.065 0.3 0.2 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. Input and output parameters vary 1:1 with VCC. VEE can vary −0.46 V / +0.06 V. 2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V. www.onsemi.com 3 MC10E104, MC100E104 Table 6. 100E SERIES PECL DC CHARACTERISTICS (VCCx = 5.0 V; VEE = 0.0 V (Note 1)) −40°C Symbol Characteristic Min 25°C Typ Max 38 46 Min 85°C Typ Max 38 46 Min Typ Max Unit 44 53 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) 3975 4050 4120 3975 4050 4120 3975 4050 4120 mV VOL Output LOW Voltage (Note 2) 3190 3295 3380 3190 3255 3380 3190 3260 3380 mV VIH Input HIGH Voltage 3835 3975 4120 3835 3975 4120 3835 3975 4120 mV VIL Input LOW Voltage 3190 3355 3525 3190 3525 3355 3190 3355 3525 mV IIH Input HIGH Current 200 mA IIL Input LOW Current 0.5 0.3 0.5 0.25 0.5 0.2 200 200 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. Input and output parameters vary 1:1 with VCC. VEE can vary −0.46 V / +0.8 V. 2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V. Table 7. 100E SERIES NECL DC CHARACTERISTICS (VCCx = 0 V; VEE = −5.0 V (Note 1)) −40°C Symbol Characteristic Min Typ 25°C Max Min Typ 85°C Max Min Typ Max Unit IEE Power Supply Current 38 46 38 46 44 53 mA VOH Output HIGH Voltage (Note 2) −1025 −950 −880 −1025 −950 −880 −1025 −950 −880 mV VOL Output LOW Voltage (Note 2) −1810 −1705 −1620 −1810 −1745 −1620 −1810 −1740 −1620 mV VIH Input HIGH Voltage −1165 −1025 −880 −1165 −1025 −880 −1165 −1025 −880 mV VIL Input LOW Voltage −1810 −1645 −1475 −1810 −1645 −1475 −1810 −1645 −1475 mV IIH Input HIGH Current 200 mA IIL Input LOW Current 200 0.5 0.3 200 0.5 0.25 0.5 0.2 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. Input and output parameters vary 1:1 with VCC. VEE can vary −0.46 V / +0.8 V. 2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V. Table 8. AC CHARACTERISTICS (VCCx= 5.0 V; VEE = 0.0 V or VCCx = 0.0 V; VEE = −5.0 V (Note 1)) −40°C Symbol Characteristic Min Typ 25°C Max Min Max Min Maximum Toggle Frequency tPLH tPHL Propagation Delay to Output D to Q D to F tSKEW Within-Device Skew (Note 2) D to Q 75 75 75 tJITTER Random Clock Jitter (RMS) <1 <1 <1 Rise/Fall Time (20−80%) Q F 225 500 100 300 385 725 425 475 700 Typ fMAX tr tf 700 Typ 85°C 600 1000 700 700 225 500 100 300 385 725 425 475 Max 700 600 1000 700 700 225 500 100 300 385 725 425 475 Unit MHz 600 1000 ps ps ps 700 700 ps NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. 10 Series: VEE can vary −0.46 V / +0.06 V. 100 Series: VEE can vary −0.46 V / +0.8 V. 2. Within-device skew is defined as identical transitions on similar paths through a device. www.onsemi.com 4 MC10E104, MC100E104 Q Zo = 50 W D Receiver Device Driver Device Q D Zo = 50 W 50 W 50 W VTT VTT = VCC − 2.0 V Figure 3. Typical Termination for Output Driver and Device Evaluation (See Application Note AND8020/D − Termination of ECL Logic Devices) Resource Reference of Application Notes AN1405/D − ECL Clock Distribution Techniques AN1406/D − Designing with PECL (ECL at +5.0 V) AN1503/D − ECLinPSt I/O SPiCE Modeling Kit AN1504/D − Metastability and the ECLinPS Family AN1568/D − Interfacing Between LVDS and ECL AN1642/D − The ECL Translator Guide AND8001/D − Odd Number Counters Design AND8002/D − Marking and Date Codes AND8020/D − Termination of ECL Logic Devices AND8066/D − Interfacing with ECLinPS AND8090/D − AC Characteristics of ECL Devices www.onsemi.com 5 MC10E104, MC100E104 PACKAGE DIMENSIONS 28 LEAD PLLC FN SUFFIX CASE 776−02 ISSUE F B Y BRK −N− 0.007 (0.180) U M T L-M 0.007 (0.180) M N S T L-M S S N S D Z −M− −L− W 28 D X V 1 G1 0.010 (0.250) T L-M S N S S VIEW D−D Z A 0.007 (0.180) R 0.007 (0.180) M M T L-M S T L-M S N N H S 0.007 (0.180) M T L-M N S S S K1 C E 0.004 (0.100) G J S K SEATING PLANE F VIEW S G1 0.010 (0.250) −T− T L-M S N VIEW S S NOTES: 1. DATUMS -L-, -M-, AND -N- DETERMINED WHERE TOP OF LEAD SHOULDER EXITS PLASTIC BODY AT MOLD PARTING LINE. 2. DIMENSION G1, TRUE POSITION TO BE MEASURED AT DATUM -T-, SEATING PLANE. 3. DIMENSIONS R AND U DO NOT INCLUDE MOLD FLASH. ALLOWABLE MOLD FLASH IS 0.010 (0.250) PER SIDE. 4. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 5. CONTROLLING DIMENSION: INCH. 6. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOTTOM BY UP TO 0.012 (0.300). DIMENSIONS R AND U ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD FLASH, BUT INCLUDING ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF THE PLASTIC BODY. 7. DIMENSION H DOES NOT INCLUDE DAMBAR PROTRUSION OR INTRUSION. THE DAMBAR PROTRUSION(S) SHALL NOT CAUSE THE H DIMENSION TO BE GREATER THAN 0.037 (0.940). THE DAMBAR INTRUSION(S) SHALL NOT CAUSE THE H DIMENSION TO BE SMALLER THAN 0.025 (0.635). DIM A B C E F G H J K R U V W X Y Z G1 K1 INCHES MIN MAX 0.485 0.495 0.485 0.495 0.165 0.180 0.090 0.110 0.013 0.021 0.050 BSC 0.026 0.032 0.020 --0.025 --0.450 0.456 0.450 0.456 0.042 0.048 0.042 0.048 0.042 0.056 --0.020 2_ 10_ 0.410 0.430 0.040 --- www.onsemi.com 6 MILLIMETERS MIN MAX 12.32 12.57 12.32 12.57 4.20 4.57 2.29 2.79 0.33 0.53 1.27 BSC 0.66 0.81 0.51 --0.64 --11.43 11.58 11.43 11.58 1.07 1.21 1.07 1.21 1.07 1.42 --0.50 2_ 10_ 10.42 10.92 1.02 --- 0.007 (0.180) M T L-M S N S MC10E104, MC100E104 ECLinPS is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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