To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS30VS-06 HIGH-SPEED SWITCHING USE OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 3.0 –0.5 +0.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 +0.3 0 –0 (1.5) FS30VS-06 1 B 5 0.5 q w e wr ¡10V DRIVE ¡VDSS .................................................................................. 60V ¡rDS (ON) (MAX) .............................................................. 30mΩ ¡ID ......................................................................................... 30A ¡Integrated Fast Recovery Diode (TYP.) .............. 65ns 2.6 ± 0.4 4.5 0.8 q GATE w DRAIN e SOURCE r DRAIN q e TO-220S APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS Drain-source voltage VGS = 0V 60 V VGSS ID Gate-source voltage Drain current VDS = 0V ±20 30 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) 120 30 A A IS ISM Source current Source current (Pulsed) 30 120 A A PD T ch Maximum power dissipation Channel temperature 45 –55 ~ +150 W °C –55 ~ +150 °C g T stg — Parameter Conditions L = 100µH Storage temperature Weight Typical value 1.2 Feb.1999 MITSUBISHI Nch POWER MOSFET FS30VS-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance VDS (ON) y fs Drain-source on-state voltage Forward transfer admittance Ciss Coss Input capacitance Output capacitance Crss td (on) Reverse transfer capacitance Turn-on delay time tr td (off) Rise time Turn-off delay time tf Fall time VSD Rth (ch-c) Source-drain voltage Thermal resistance trr Reverse recovery time Limits Test conditions ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 10V Unit Min. Typ. Max. 60 — — — — ±0.1 V µA — 2.0 — 3.0 0.1 4.0 mA V — 23 30 mΩ ID = 15A, VDS = 10V — 14 0.345 20 0.450 — V S VDS = 10V, VGS = 0V, f = 1MHz — — 1250 310 — — pF pF — — 150 20 — — pF ns — — 50 60 — — ns ns ID = 15A, VGS = 10V VDD = 30V, ID = 15A, VGS = 10V, RGEN = RGS = 50Ω IS = 15A, VGS = 0V Channel to case IS = 30A, dis/dt = –100A/µs — 60 — ns — — 1.0 — 1.5 2.77 — 65 — V °C/W ns PERFORMANCE CURVES 40 30 20 10 0 50 MAXIMUM SAFE OPERATING AREA 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 0 50 100 150 200 102 7 5 3 2 tw = 10ms 101 7 5 3 2 100ms 1ms 10ms 100 DC 7 TC = 25°C 5 Single Pulse 3 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V 30 VGS = 20V TC = 25°C Pulse Test 40 TC = 25°C Pulse Test 30 5V 20 10 0 PD = 45W 4V 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 6V 10V 24 6V 5V 18 PD = 45W 12 6 4V 0 0 1 2 3 4 5 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30VS-06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) TC = 25°C Pulse Test 4.0 3.0 2.0 ID = 60A 1.0 30A 50 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 5.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25°C Pulse Test 40 30 VGS = 10V 20V 20 10 10A 0 4 8 12 DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) TC = 25°C VDS = 10V Pulse Test 80 60 40 20 0 102 VDS = 10V 7 Pulse Test 5 4 3 TC = 25°C 2 75°C 101 7 5 4 3 125°C 2 0 4 8 12 16 100 0 10 20 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 Ciss 103 7 5 3 2 Coss Crss 102 7 5 3 Tch = 25°C 2 f = 1MHZ 101 0 7 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 20 GATE-SOURCE VOLTAGE VGS (V) 100 CAPACITANCE Ciss, Coss, Crss (pF) 16 VGS = 0V 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) 0 103 7 5 4 3 Tch = 25°C VDD = 30V VGS = 10V RGEN = RGS = 50Ω 2 102 td(off) 7 5 tf 4 3 td(on) 2 tr 101 100 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30VS-06 HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) VDS = 10V 12 20V 8 40V 4 0 10 20 30 40 30 75°C 25°C 10 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 2 100 7 5 4 3 2 –50 0 50 100 VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 TC = 125°C 20 0 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 10–1 VGS = 0V Pulse Test 40 50 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) 50 Tch = 25°C ID = 30A 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 2 0.5 100 0.2 7 0.1 5 3 2 10–1 7 5 3 2 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999