AO4708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4708 is Pb-free (meets ROHS & Sony 259 specifications). AO4708L is a Green Product ordering option. AO4708L and AO4708 are electrically identical. VDS (V) = 30V ID =15A (VGS = 10V) RDS(ON) < 8.7mΩ (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D D D D D S S S G SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A TA=25°C Pulsed Drain Current B B Repetitive avalanche energy L=0.3mH B TA=25°C A Power Dissipation Junction and Storage Temperature Range A V 80 A IAR 25 A EAR 94 mJ 3.1 W 2.0 TJ, TSTG t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A 12 -55 to 150 Symbol A ±12 IDSM IDM PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Units V 15 TA=70°C Avalanche Current Maximum 30 RθJA RθJL Typ 32 60 17 °C Max 40 75 24 Units °C/W °C/W °C/W AO4708 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, VGS=0V VDS=24V, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.4 VGS=4.5V, VDS=5V 80 TJ=125°C VGS=10V, ID=15A TJ=125°C VGS=4.5V, ID=14A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current IS VDS=5V, ID=15A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 20 1.8 0.1 µA 2.4 V 7.2 8.7 10.5 13.1 8.6 10.5 mΩ 0.5 V 5.5 A 3360 pF 85 0.39 VGS=10V, VDS=15V, ID=15A VGS=10V, VDS=15V, RL=1Ω, RGEN=3Ω mΩ S 390 pF 145 VGS=0V, VDS=0V, f=1MHz mA A 2800 VGS=0V, VDS=15V, f=1MHz Units V 0.1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 IDSS RDS(ON) Typ pF 0.8 1.5 Ω 42 52 nC 19 nC 7 nC 6 nC 7 ns 7 ns 31 ns 5 ns trr Body Diode Reverse Recovery Time IF=15A, dI/dt=300A/µs 13 Qrr Body Diode Reverse Recovery Charge IF=15A, dI/dt=300A/µs 12 15 ns nC A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev0: Sept. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES Ltd. OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Alpha & Omega Semiconductor, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. AO4708 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 30 6V 8V 100 10V 4.5V 80 20 3.5V 60 ID(A) ID (A) VDS=5V 25 4V 40 125° 15 25°C 10 20 5 VGS=3V 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Figure 1: On-Region Characteristics 3 3.5 4 1.8 10 Normalized On-Resistance 11 RDS(ON) (mΩ) 2.5 VGS(Volts) Figure 2: Transfer Characteristics 12 VGS=4.5V 9 8 7 VGS=10V 6 5 4 ID=15A 1.6 VGS=10V 1.4 VGS=4.5V 1.2 ID=14A 1 0.8 0 10 20 30 40 50 60 0 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 16 ID=15A 14 1.0E+01 125°C 125°C 1.0E+00 12 IS (A) RDS(ON) (mΩ) 2 10 8 25°C 1.0E-01 1.0E-02 1.0E-03 25°C 6 1.0E-04 1.0E-05 4 2 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4708 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4500 10 4000 3500 VDS=15V ID=15A 6 Capacitance (pF) VGS (Volts) 8 4 Ciss 3000 2500 2000 1500 Crss 1000 2 Coss 500 0 0 10 20 30 40 0 50 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 Power (W) ID (Amps) 70 10ms 10s 0.1s DC 1s 0.1 0.1 60 50 40 30 TJ(Max)=150°C TA=25°C 0.0 30 TJ(Max)=150°C TA=25°C 80 1ms 1.0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 90 100µs RDS(ON) limited 10 100 10µs 10.0 5 20 10 1 10 100 VDS (Volts) 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.001 0.00001 0.0001 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.01 0.001 0.01 0.1 Ton 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. 100 1000 AO4708 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 1 1.0E-02 0.8 30A VDS=24V 20A VSD(V) VDS=12V 1.0E-04 1.0E-05 0.6 5A 0.4 0 0 100 150 200 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature 50 50 35 16 25ºC 30 12 25 Qrr 8 125ºC 9 8 5 10 15 20 25 30 25ºC Qrr trr (ns) 6 10 15 20 25 30 2.5 Is=20A 2.0 25ºC 1.5 12 10 trr 25ºC 8 3 5 125ºC 16 Irm (A) Qrr (nC) 125ºC 20 0.0 14 9 0.3 18 12 25ºC 125ºC Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current 125ºC 30 0.6 S Is=20A 0.9 25ºC S 0 15 40 1.2 trr 7 Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 50 1.5 4 0 0 10 1.8 25ºC 5 25ºC 0 2.1 125ºC 6 4 Irm 2.4 di/dt=1000A/us 10 15 5 100 150 200 Temperature (°C) Figure 13: Diode Forward voltage vs. Junction Temperature 11 125ºC trr (ns) di/dt=1000A/us 40 50 12 Irm (A) 45 Qrr (nC) 0 20 10 IS=1A 0.2 1.0E-06 20 10A S 125ºC 6 1.0 0.5 Irm 0 0 600 800 1000 1200 di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt 0 200 400 Alpha & Omega Semiconductor, Ltd. S IR (A) 1.0E-03 4 0 200 400 600 800 1000 0.0 1200 di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt