TI1 LM25101BMAX/NOPB 3a, 2a, and 1a 80v half-bridge gate driver Datasheet

LM25101A, LM25101B, LM25101C
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SNVS859B – JULY 2012 – REVISED APRIL 2013
LM25101A/B/C 3A, 2A, and 1A 80V Half-Bridge Gate Drivers
Check for Samples: LM25101A, LM25101B, LM25101C
FEATURES
PACKAGES
•
•
•
•
•
•
•
•
1
2
•
•
•
•
•
•
Independent high and low driver logic inputs
Bootstrap supply voltage up to 100V DC
Drives both a high-side and low-side NChannel MOSFETs
Fast propagation times (25 ns typical)
Drives 1000 pF load with 8 ns rise and fall
times
Excellent propagation delay matching (3 ns
typical)
Supply rail under-voltage lockout
Low power consumption
Pin compatible with HIP2100/HIP2101
TYPICAL APPLICATIONS
•
•
•
•
•
•
•
Motor controlled drivers
Half and Full Bridge power converters
Synchronous buck converters
Two switch forward power converters
Forward with Active Clamp converters
48V server power
Solar DC/DC and DC/AC converters
SOIC-8
SO Power Pad-8
WSON-8 (4 mm x 4 mm)
WSON-10 (4 mm x 4 mm)
MSOP Power Pad-8
DESCRIPTION
The LM25101A/B/C High Voltage Gate Drivers are
designed to drive both the high-side and the low-side
N-Channel MOSFETs in a synchronous buck or a
half-bridge configuration. The “A” versions provide a
full 3A of gate drive while the “B” and “C” versions
provide 2A and 1A respectively. The outputs are
independently controlled with TTL input thresholds.
An integrated high voltage diode is provided to
charge the high-side gate drive bootstrap capacitor. A
robust level shifter operates at high speed while
consuming low power and providing clean level
transitions from the control logic to the high-side gate
driver. Under-voltage lockout is provided on both the
low-side and the high-side power rails. These devices
are available in the standard SOIC-8 pin, SO Power
Pad-8, WSON-8 (4 mm x 4 mm), WSON-10 (4 mm x
4 mm), and MSOP Power Pad-8 packages.
SIMPLIFIED BLOCK DIAGRAM
HB
HO
UVLO
LEVEL
SHIFT
DRIVER
HS
HI
VDD
UVLO
LI
LO
DRIVER
VSS
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2012–2013, Texas Instruments Incorporated
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SNVS859B – JULY 2012 – REVISED APRIL 2013
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Table 1. Input/Output Options
Part Number
Input Thresholds
Peak Output Current
LM25101A
TTL
3A
LM25101B
TTL
2A
LM25101C
TTL
1A
Connection Diagrams
VDD
1
HB
2
8
LO
7
VSS
VDD
1
HB
2
HO
3
HS
4
SOIC-8
HO
3
6
LI
HS
4
5
HI
SO
Power
Pad-8
8
LO
7
VSS
6
LI
5
HI
Exposed Pad
Connect to VSS
VDD
1
8
LO
HB
2
7
VSS
HO
3
6
LI
WSON-8
HS
4
5
HI
VDD
HB
HO
HS
2
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LO
VDD
1
10
HB
2
9
VSS
HO
3
8
LI
HS
4
7
HI
NC
5
6
NC
WSON-10
LO
MSOPPowerPad-8
VSS
LI
HI
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PIN DESCRIPTIONS (1)
Pin #
SOIC-8
SO
Power
Pad-8
WSON8 (1)
WSON10 (1)
MSOPPowerPad
-8 (1)
Name
1
1
1
1
1
VDD
2
2
2
2
2
3
3
3
3
4
4
4
5
5
6
(1)
Description
Application Information
Positive gate
drive supply
Locally decouple to VSS using low ESR/ESL
capacitor located as close to the IC as possible.
HB
High-side gate
driver bootstrap
rail
Connect the positive terminal of the bootstrap
capacitor to HB and the negative terminal to HS. The
bootstrap capacitor should be placed as close to the
IC as possible.
3
HO
High-side gate
driver output
Connect to the gate of high-side MOSFET with a
short, low inductance path.
4
4
HS
High-side
MOSFET
source
connection
Connect to the bootstrap capacitor negative terminal
and the source of the high-side MOSFET.
5
7
5
HI
High-side driver
control input
The LM25101A/B/C inputs have TTL type thresholds.
Unused inputs should be tied to ground and not left
open.
6
6
8
6
LI
Low-side driver
control input
The LM25101A/B/C inputs have TTL type thresholds.
Unused inputs should be tied to ground and not left
open.
7
7
7
9
7
VSS
Ground return
All signals are referenced to this ground.
8
8
8
10
8
LO
Low-side gate
driver output
Connect to the gate of the low-side MOSFET with a
short, low inductance path.
EP
EP
EP
EP
EP (WSON and SO
PowerPad and MSOPPowerPad packages)
Solder to the ground plane under the IC to aid in heat
dissipation.
Note: For SO Power Pad - 8, WSON-8, WSON-10 and MSOP-PowerPad-8 package, it is recommended that the exposed pad on
the bottom of the package is soldered to ground plane on the PC board, and that ground plane should extend out from
beneath the IC to help dissipate heat. For WSON-10 package, pins 5 and 6 have no connection.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings (1)
VDD to VSS
−0.3V to +18V
HB to HS
−0.3V to +18V
−0.3V to VDD +0.3V
LI or HI Input
LO Output
−0.3V to VDD +0.3V
HO Output
VHS −0.3V to VHB +0.3V
HS to VSS (2)
−5V to +100V
HB to VSS
100V
Junction Temperature
+150°C
−55°C to +150°C
Storage Temperature Range
ESD Rating, HBM
(1)
(2)
(3)
(3)
2 kV
Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under
which operation of the device is specified. Operating Ratings do not imply performance limits. For performance limits and associated test
conditions, see the Electrical Characteristics tables.
In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS node will generally not
exceed -1V. However, in some applications, board resistance and inductance may result in the HS node exceeding this stated voltage
transiently. If negative transients occur, the HS voltage must never be more negative than VDD-15V. For example if VDD = 10V, the
negative transients at HS must not exceed -5V.
The Human Body Model (HBM) is a 100 pF capacitor discharged through a 1.5kΩ resistor into each pin. 2 kV for all pins except Pin 2,
Pin 3 and Pin 4 which are rated at 1000V for HBM. Machine Model (MM) rating is 100V.
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Recommended Operating Conditions
VDD
+9V to +14V
HS
−1V to 100V - VDD
HB
VHS +8V to VHS +14V
HS Slew Rate
< 50 V/ns
−40°C to +125°C
Junction Temperature
Electrical Characteristics
Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature (TJ) range of -40°C
to +125°C. Minimum and Maximum limits are specified through test, design, or statistical correlation. Typical values represent
the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise specified, VDD =
VHB = 12V, VSS = VHS = 0V, No Load on LO or HO (1).
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
0.25
0.4
mA
SUPPLY CURRENTS
IDD
VDD Quiescent Current, LM25101A/B/C
LI = HI = 0V
IDDO
VDD Operating Current
f = 500 kHz
2.0
3
mA
IHB
Total HB Quiescent Current
LI = HI = 0V
0.06
0.2
mA
IHBO
Total HB Operating Current
f = 500 kHz
1.6
3
mA
IHBS
HB to VSS Current, Quiescent
HS = HB = 100V
0.1
10
µA
IHBSO
HB to VSS Current, Operating
f = 500 kHz
0.4
mA
INPUT PINS
VIL
Input Voltage Threshold LM25101A/B/C
VIHYS
Input Voltage Hysteresis LM25101A/B/C
RI
Input Pulldown Resistance
Rising Edge
1.3
1.8
2.3
100
200
400
kΩ
6.0
6.9
7.4
V
50
V
mV
UNDER VOLTAGE PROTECTION
VDDR
VDD Rising Threshold
VDDH
VDD Threshold Hysteresis
VHBR
HB Rising Threshold
VHBH
HB Threshold Hysteresis
(1)
4
0.5
5.7
6.6
0.4
V
7.1
V
V
Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlation
using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).
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Electrical Characteristics (continued)
Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature (TJ) range of -40°C
to +125°C. Minimum and Maximum limits are specified through test, design, or statistical correlation. Typical values represent
the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise specified, VDD =
VHB = 12V, VSS = VHS = 0V, No Load on LO or HO (1).
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
BOOT STRAP DIODE
VDL
Low-Current Forward Voltage
IVDD-HB = 100 µA
0.52
0.85
V
VDH
High-Current Forward Voltage
IVDD-HB = 100 mA
0.8
1
V
RD
Dynamic Resistance LM25101A/B/C
IVDD-HB = 100 mA
1.0
1.65
Ω
IHO = ILO = 100 mA
0.12
0.25
LO & HO GATE DRIVER
VOL
VOH
Low-Level Output Voltage LM25101A
Low-Level Output Voltage LM25101B
0.16
0.4
Low-Level Output Voltage LM25101C
0.28
0.65
0.24
0.45
0.28
0.60
0.60
1.10
High-Level Output Voltage LM25101A
High-Level Output Voltage LM25101B
High-Level Output Voltage LM25101C
IOHL
Peak Pullup Current LM25101A
IHO = ILO = 100 mA
VOH = VDD– LO or
VOH = HB - HO
HO, LO = 0V
Peak Pullup Current LM25101B
Peak Pulldown Current LM25101A
V
3
2
Peak Pullup Current LM25101C
IOLL
V
A
1
HO, LO = 12V
3
Peak Pulldown Current LM25101B
2
Peak Pulldown Current LM25101C
1
A
THERMAL RESISTANCE
θJA
(2)
Junction to Ambient
(2)
SOIC-8
170
SO power Pad-8
40
WSON-8
40
WSON-10
40
Msop Power Pad-8
80
°C/W
The θJA is not a given constant for the package and depends on the printed circuit board design and the operating environment.
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Switching Characteristics
Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature (TJ) range of -40°C
to +125°C. Minimum and Maximum limits are specified through test, design, or statistical correlation. Typical values represent
the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise specified, VDD =
VHB = 12V, VSS = VHS = 0V, No Load on LO or HO (1).
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
tLPHL
LO Turn-Off Propagation Delay
LI Falling to LO Falling
22
56
ns
tLPLH
LO Turn-On Propagation Delay
LI Rising to LO Rising
26
56
ns
tHPHL
HO Turn-Off Propagation Delay
HI Falling to HO Falling
22
56
ns
tHPLH
LO Turn-On Propagation Delay
HI Rising to HO Rising
26
56
ns
tMON
Delay Matching: LO on & HO Off
4
10
ns
tMOFF
Delay Matching: LO on & HO Off
4
10
ns
tRC, tFC
Either Output Rise/Fall Time
CL = 1000 pF
tR
Output Rise Time (3V to 9V) LM25101A
CL = 0.1 µF
tF
8
Output Rise Time (3V to 9V) LM25101B
570
Output Rise Time (3V to 9V) LM25101C
990
Output Fall Time (3V to 9V) LM25101A
ns
430
CL = 0.1 µF
ns
260
Output Fall Time (3V to 9V) LM25101B
430
Output Fall Time (3V to 9V) LM25101C
715
tPW
Minimum input pulse duration that changes
the output
50
ns
tBS
Bootstrap diode reverse recovery time
37
ns
(1)
6
IF = 100 mA,
IR = 100 mA
ns
Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlation
using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).
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Typical Performance Characteristics
Peak Sourcing Current
vs
VDD
Peak Sinking Current
vs
VDD
5.0
5.0
4.5
4.5
4.0
4.0
3.5
LM25101A
3.0
CURRENT (A)
CURRENT (A)
3.5
2.5
LM25101B
2.0
1.5
1.0
2.5
LM25101B
2.0
1.5
1.0
LM25101C
0.5
0.0
LM25101A
3.0
LM25101C
0.5
7
8
9
10
11
12
13
14
0.0
15
7
8
9
10
11
12
VDD (V)
Figure 1.
Figure 2.
Sink Current
vs
Output Voltage
Source Current
vs
Output Voltage
3.5
2.5
VDD = 12V
2.5
LM25101A
CURRENT (A)
CURRENT (A)
15
3.0
3.0
2.0
LM25101B
1.5
1.0
LM25101A
2.0
LM25101B
1.5
1.0
LM25101C
0.5
LM25101C
0.5
0
2
4
8
6
10
0.0
12
0
2
4
8
6
10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 3.
Figure 4.
LM25101A/B/C IDD
vs
Frequency
Operating Current
vs
Temperature
100000
12
2.3
VDD = 12V
2.1
CL = 4400 pF
IDDO
1.9
10000
CURRENT (mA)
CURRENT (PA)
14
3.5
VDD = 12V
0.0
13
VDD (V)
CL = 1000 pF
1000
1.7
IHBO
1.5
1.3
1.1
CL = 0 pF
0.9
100
0.1
1
10
100
1000
0.7
-50 -25
FREQUENCY (kHz)
Figure 5.
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0
25
50
75
100 125 150
TEMPERATURE (oC)
Figure 6.
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Typical Performance Characteristics (continued)
IHB
vs
Frequency
Quiescent Current
vs
Supply Voltage
100000
400
HB = 12V,
HS = 0V
350
CL = 4400 pF
IDD
300
CL = 1000 pF
1000
CL = 0 pF
100
CURRENT (PA)
CURRENT (PA)
10000
250
200
150
100
IHB
50
10
0.1
1
10
100
0
1000
9
10
11
12
13
14
15
16
VDD, VHB (V)
Figure 7.
Figure 8.
Quiescent Current
vs
Temperature
Undervoltage Rising Thresholds
vs
Temperature
350
7.30
7.20
300
7.10
IDD
THRESHOLD (V)
250
CURRENT (PA)
8
FREQUENCY (kHz)
200
150
100
7.00
VDDR
6.90
6.80
6.70
6.60
VHBR
6.50
50
6.40
IHB
0
-50 -25
0
25
50
75
6.30
-50 -25
100 125 150
TEMPERATURE (°C)
50
75 100 125 150
Figure 10.
Undervoltage Threshold Hysteresis
vs
Temperature
Bootstrap Diode Forward Voltage
0.60
1.00E-01
T = 150°C
0.55
1.00E-02
VDDH
0.50
1.00E-03
ID (A)
HYSTERESIS (V)
25
TEMPERATURE (°C)
Figure 9.
0.45
VHBH
0.40
0.30
-50
T = 25°C
1.00E-04
T = -40°C
1.00E-05
0.35
-25 0_
25 50_ 75_100_125_150_
1.00E-06
0.2
0.3
o
TEMPERATURE ( C)
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0.4
0.5
0.6
0.7
0.8
0.9
VD (V)
Figure 11.
8
0
Figure 12.
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Typical Performance Characteristics (continued)
LM25101A/B/C Input Threshold
vs
VDD
1.92
1.92
1.91
1.91
1.90
THRESHOLD VOLTAGE (V)
THRESHOLD VOLTAGE (V)
LM25101A/B/C Input Threshold
vs
Temperature
Rising
1.89
1.88
1.87
1.86
Falling
1.85
1.84
1.83
1.82
1.90
Rising
1.89
1.88
1.87
1.86
1.85
Falling
1.84
1.83
1.82
1.81
1.81
1.80
1.80
-50 -25
0
25
50
8
75 100 125 150
9
10
11
TEMPERATURE (°C)
13
14
15
16
Figure 13.
Figure 14.
LM25101A/B/C Propagation Delay
vs
Temperature
LO & HO Gate Drive - High Level Output Voltage
vs
Temperature
1.0
40
VDD = 12V
0.9
0.8
35
30
VOH (V)
0.7
DELAY (ns)
12
VDD (V)
T_PLH
25
LM25101C
0.6
0.5
0.4
LM25101B
0.3
T_PHL
LM25101A
0.2
20
0.1
15
-50
-25
0
25
50
0.0
-50 -25
75 100 125 150
0
25
50
75 100 125 150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 15.
Figure 16.
LO & HO Gate Drive - Low Level Output Voltage
vs
Temperature
LO & HO Gate Drive - Output High Voltage
vs
VDD
0.50
0.8
VDD = 12V
IOUT = -100 mA
0.45
0.7
0.40
0.6
0.30
LM25101C
LM25101C
VOH (V)
VOL (V)
0.35
0.25
LM25101B
0.20
0.15
LM25101A
0.10
0.4
0.3
LM25101B
0.2
0.05
0.00
-50 -25
0.5
0
25
50
75 100 125 150
0.1
LM25101A
7
8
TEMPERATURE (°C)
Figure 17.
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9
10
11
12
13
14
15
VDD (V)
Figure 18.
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Typical Performance Characteristics (continued)
LO & HO Gate Drive - Output Low Voltage
vs
VDD
0.35
IOUT = 100 mA
VOL (V)
0.30
LM25101C
0.25
0.20
LM25101B
0.15
LM25101A
0.10
7
8
9
10
11
12
13
14
15
VDD (V)
Figure 19.
10
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TIMING DIAGRAM
LI
LI
HI
tHPLH
tLPLH
HI
tHPHL
tLPHL
LO
LO
HO
HO
tMON
tMOFF
Figure 20.
Layout Considerations
The optimum performance of high and low-side gate drivers cannot be achieved without taking due
considerations during circuit board layout. Following points are emphasized.
1. Low ESR / ESL capacitors must be connected close to the IC, between VDD and VSS pins and between the
HB and HS pins to support the high peak currents being drawn from VDD during turn-on of the external
MOSFET.
2. To prevent large voltage transients at the drain of the top MOSFET, a low ESR electrolytic capacitor must be
connected between MOSFET drain and ground (VSS).
3. In order to avoid large negative transients on the switch node (HS pin), the parasitic inductances in the
source of top MOSFET and in the drain of the bottom MOSFET (synchronous rectifier) must be minimized.
4. Grounding Considerations:
(a) The first priority in designing grounding connections is to confine the high peak currents that charge and
discharge the MOSFET gate into a minimal physical area. This will decrease the loop inductance and
minimize noise issues on the gate terminal of the MOSFET. The MOSFETs should be placed as close as
possible to the gate driver.
(b)
The second high current path includes the bootstrap capacitor, the bootstrap diode, the local ground
referenced bypass capacitor and low-side MOSFET body diode. The bootstrap capacitor is recharged on
a cycle-by-cycle basis through the bootstrap diode from the ground referenced VDD bypass capacitor.
The recharging occurs in a short time interval and involves high peak current. Minimizing this loop length
and area on the circuit board is important to ensure reliable operation.
A recommended layout pattern for the driver is shown in Figure 21. If possible a single layer placement is
preferred.
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Recommended Layout for Driver IC and
Passives
VDD
LO
HB
VSS
SO
Power
Pad-8
HO
LI
HI
HS
To Hi-Side FET
D
Multi Layer
Option
LO
N
G
HO
HS
HO
Single Layer
Option
To Low-Side FET
Figure 21. Recommended Layout Pattern
Power Dissipation Considerations
The total IC power dissipation is the sum of the gate driver losses and the bootstrap diode losses. The gate
driver losses are related to the switching frequency (f), output load capacitance on LO and HO (CL), and supply
voltage (VDD) and can be roughly calculated as:
PDGATES = 2 • f • CL • VDD2
(1)
There are some additional losses in the gate drivers due to the internal CMOS stages used to buffer the LO and
HO outputs. Figure 22 shows the measured gate driver power dissipation versus frequency and load
capacitance. At higher frequencies and load capacitance values, the power dissipation is dominated by the
power losses driving the output loads and agrees well with Equation 1. This plot can be used to approximate the
power losses due to the gate drivers.
1.000
CL = 4400 pF
POWER (W)
0.100
CL = 1000 pF
0.010
CL = 0 pF
0.001
0.1
1.0
10.0
100.0
1000.0
SWITCHING FREQUENCY (kHz)
Figure 22. Gate Driver Power Dissipation (LO + HO)
VDD = 12V, Neglecting Diode Losses
12
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Product Folder Links: LM25101A LM25101B LM25101C
LM25101A, LM25101B, LM25101C
www.ti.com
SNVS859B – JULY 2012 – REVISED APRIL 2013
The bootstrap diode power loss is the sum of the forward bias power loss that occurs while charging the
bootstrap capacitor and the reverse bias power loss that occurs during reverse recovery. Since each of these
events happens once per cycle, the diode power loss is proportional to frequency. Larger capacitive loads
require more energy to recharge the bootstrap capacitor resulting in more losses. Higher input voltages (VIN) to
the half bridge result in higher reverse recovery losses. Figure 23 was generated based on calculations and lab
measurements of the diode recovery time and current under several operating conditions. This can be useful for
approximating the diode power dissipation.
The total IC power dissipation can be estimated from the previous plots by summing the gate drive losses with
the bootstrap diode losses for the intended application.
0.100
POWER (W)
CL = 4400 pF
CL = 0 pF
0.010
0.001
1
10
100
1000
SWITCHING FREQUENCY (kHz)
Figure 23. Diode Power Dissipation VIN = 50V
Copyright © 2012–2013, Texas Instruments Incorporated
Product Folder Links: LM25101A LM25101B LM25101C
Submit Documentation Feedback
13
LM25101A, LM25101B, LM25101C
SNVS859B – JULY 2012 – REVISED APRIL 2013
www.ti.com
REVISION HISTORY
Changes from Original (March 2013) to Revision A
•
14
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 13
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Product Folder Links: LM25101A LM25101B LM25101C
PACKAGE OPTION ADDENDUM
www.ti.com
12-Oct-2014
PACKAGING INFORMATION
Orderable Device
Status
(1)
LM25101AM/NOPB
ACTIVE
Package Type Package Pins Package
Drawing
Qty
SOIC
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
L25101
AM
LM25101AMR/NOPB
ACTIVE SO PowerPAD
DDA
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
-40 to 125
L25101
AMR
LM25101AMRX/NOPB
ACTIVE SO PowerPAD
DDA
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
-40 to 125
L25101
AMR
LM25101AMX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
L25101
AM
LM25101ASD-1/NOPB
ACTIVE
WSON
NGT
8
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
25101A1
LM25101ASD/NOPB
ACTIVE
WSON
DPR
10
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
25101A
LM25101ASDX-1/NOPB
ACTIVE
WSON
NGT
8
4500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
25101A1
LM25101ASDX/NOPB
ACTIVE
WSON
DPR
10
4500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
25101A
LM25101BMA/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
L25101
BMA
LM25101BMAX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
L25101
BMA
LM25101BSD/NOPB
ACTIVE
WSON
DPR
10
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
25101B
LM25101BSDX/NOPB
ACTIVE
WSON
DPR
10
4500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
25101B
LM25101CMA/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
L25101
CMA
LM25101CMAX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
L25101
CMA
LM25101CMY/NOPB
ACTIVE
MSOPPowerPAD
DGN
8
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
CMYN
LM25101CMYE/NOPB
ACTIVE
MSOPPowerPAD
DGN
8
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
CMYN
LM25101CMYX/NOPB
ACTIVE
MSOPPowerPAD
DGN
8
3500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
CMYN
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
12-Oct-2014
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LM25101CSD/NOPB
ACTIVE
WSON
DPR
10
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
25101C
LM25101CSDX/NOPB
ACTIVE
WSON
DPR
10
4500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
25101C
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
12-Oct-2014
Addendum-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com
7-Sep-2015
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
LM25101AMRX/NOPB
Package Package Pins
Type Drawing
SO
Power
PAD
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
DDA
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM25101AMX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM25101ASD-1/NOPB
WSON
NGT
8
1000
178.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM25101ASD/NOPB
WSON
DPR
10
1000
178.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM25101ASDX-1/NOPB
WSON
NGT
8
4500
330.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM25101ASDX/NOPB
WSON
DPR
10
4500
330.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM25101BMAX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM25101BSD/NOPB
WSON
DPR
10
1000
178.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM25101BSDX/NOPB
WSON
DPR
10
4500
330.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM25101CMAX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM25101CMY/NOPB
MSOPPower
PAD
DGN
8
1000
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LM25101CMYE/NOPB
MSOPPower
PAD
DGN
8
250
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LM25101CMYX/NOPB
MSOPPower
DGN
8
3500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
7-Sep-2015
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
PAD
LM25101CSD/NOPB
WSON
DPR
10
1000
178.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM25101CSDX/NOPB
WSON
DPR
10
4500
330.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM25101AMRX/NOPB
SO PowerPAD
DDA
8
2500
367.0
367.0
35.0
LM25101AMX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
LM25101ASD-1/NOPB
WSON
NGT
8
1000
210.0
185.0
35.0
LM25101ASD/NOPB
WSON
DPR
10
1000
210.0
185.0
35.0
LM25101ASDX-1/NOPB
WSON
NGT
8
4500
367.0
367.0
35.0
LM25101ASDX/NOPB
WSON
DPR
10
4500
367.0
367.0
35.0
LM25101BMAX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
LM25101BSD/NOPB
WSON
DPR
10
1000
210.0
185.0
35.0
LM25101BSDX/NOPB
WSON
DPR
10
4500
367.0
367.0
35.0
LM25101CMAX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
LM25101CMY/NOPB
MSOP-PowerPAD
DGN
8
1000
210.0
185.0
35.0
LM25101CMYE/NOPB
MSOP-PowerPAD
DGN
8
250
210.0
185.0
35.0
LM25101CMYX/NOPB
MSOP-PowerPAD
DGN
8
3500
367.0
367.0
35.0
LM25101CSD/NOPB
WSON
DPR
10
1000
210.0
185.0
35.0
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
7-Sep-2015
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM25101CSDX/NOPB
WSON
DPR
10
4500
367.0
367.0
35.0
Pack Materials-Page 3
MECHANICAL DATA
DGN0008A
MUY08A (Rev A)
BOTTOM VIEW
www.ti.com
MECHANICAL DATA
DDA0008B
MRA08B (Rev B)
www.ti.com
MECHANICAL DATA
NGT0008A
SDC08A (Rev A)
www.ti.com
MECHANICAL DATA
DPR0010A
SDC10A (Rev A)
www.ti.com
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