DMN3016LFDF N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) Max ID Max TA = 25°C 12mΩ @ VGS = 10V 10A 16mΩ @ VGS = 4.5V 8.5A BVDSS 0.6mm profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Low On-Resistance 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Case: U-DFN2020-6 (Type F) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (Approximate) Battery Management Application Power Management Functions DC-DC Converters D U-DFN2020-6 (Type F) G Pin1 Top View S Pin Out Bottom View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number DMN3016LFDF-7 DMN3016LFDF-13 Notes: Case U-DFN2020-6 (Type F) U-DFN2020-6 (Type F) Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information NZ Date Code Key Year Code Month Code 2016 D Jan 1 2017 E Feb 2 DMN3016LFDF Document number: DS37735 Rev. 1 - 2 Mar 3 NZ = Product Type Marking Code YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September) YM NEW PRODUCT ADVANCE INFORMATION Features and Benefits 2018 F Apr 4 2019 G May 5 Jun 6 1 of 7 www.diodes.com 2020 H Jul 7 2021 I Aug 8 Sep 9 2022 J Oct O 2023 K Nov N Dec D June 2016 © Diodes Incorporated DMN3016LFDF Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT ADVANCE INFORMATION Continuous Drain Current (Note 6) VGS = 10V Steady State t<10s TA = +25C TA = +70C TA = +25C TA = +70C Value 30 ±20 10 8 ID A 12 9 2.5 50 22 24 ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Unit V V IS IDM IAR EAR A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Steady State t<10s TA = +25°C TA = +70°C Steady State t<10s Steady State Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Value 0.73 0.47 174 121 2.02 1.30 66 42 11.6 -55 to +150 PD RJA PD RJA RJC TJ, TSTG Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) VSD 8 12 0.70 2.0 12 16 1.0 V Static Drain-Source On-Resistance 1.4 - VDS = VGS, ID = 250μA VGS = 10V, ID = 11A VGS = 4.5V, ID = 9A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR - 1415 119 82 2.6 11.3 25.1 3.5 3.6 4.8 16.5 26.1 5.6 12.3 10.4 - Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 15V, ID = 12A ns VDD = 15V, VGS = 10V, RL = 1.25Ω, Rg = 3Ω ns nC IF = 12A, di/dt = 500A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN3016LFDF Document number: DS37735 Rev. 1 - 2 2 of 7 www.diodes.com June 2016 © Diodes Incorporated DMN3016LFDF 30 30 VGS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = 4.5V VGS = 4.0V 20 VGS = 3.5V VGS = 3.0V 15 10 5 VDS = 5.0V 20 15 10 TA = 150C TA = 125C 5 TA = 85C VGS = 2.5V TA = 25C 0 0.5 1.0 1.5 VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics 2.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE() 0.04 0.03 0.02 0.01 0 0 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 1 2 3 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Fig. 5 On-Resistance Variation with Temperature DMN3016LFDF Document number: DS37735 Rev. 1 - 2 3 of 7 www.diodes.com 4 0.04 VGS = 4.5V 0.03 TA = 125C 0.02 T A = 150C TA = 85 C TA = 25C 0.01 TA = -55C 0 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON),DRAIN-SOURCE ON-RESISTANCE() TA = -55C 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT ADVANCE INFORMATION 25 30 VGS = 4.5V ID = 5A VGS = 10V ID = 10A -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature June 2016 © Diodes Incorporated DMN3016LFDF IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE 25 20 15 10 5 T ( S G V 0 -50 -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 1,800 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 9 VGS, GATE-SOURCE VOLTAGE (V) f = 1MHz 1,600 1,400 1,200 C iss 1,000 800 600 400 Coss 200 0 0 10 2,000 CT, JUNCTION CAPACITANCE (pF) NEW PRODUCT ADVANCE INFORMATION 30 )V (E G A T L O V D L O H S E R H T E T A G , )H 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance DMN3016LFDF Document number: DS37735 Rev. 1 - 2 7 6 5 4 3 2 1 Crss 0 f = 1MHz 8 30 4 of 7 www.diodes.com 0 0 5 10 15 20 25 Qg, TOTAL GATE CHARGE (nC) Fig. 10 Gate-Charge Characteristics 30 June 2016 © Diodes Incorporated DMN3016LFDF r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT ADVANCE INFORMATION 1 D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t) = r(t) * RθJA RθJA = 172℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 0.00001 0.0001 DMN3016LFDF Document number: DS37735 Rev. 1 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 11. Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 June 2016 © Diodes Incorporated DMN3016LFDF Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. NEW PRODUCT ADVANCE INFORMATION U-DFN2020-6 (Type F) A1 A A3 Seating Plane D e3 e4 k2 D2a E z2 D2 E2a E2 k1 z1 z(4x) e2 k e L b U-DFN2020-6 (Type F) Dim Min Max Typ A 0.57 0.63 0.60 A1 0.00 0.05 0.03 A3 0.15 b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 D2a 0.33 0.43 0.38 E 1.95 2.05 2.00 E2 1.05 1.25 1.15 E2a 0.65 0.75 0.70 e 0.65 BSC e2 0.863 BSC e3 0.70 BSC e4 0.325 BSC k 0.37 BSC k1 0.15 BSC k2 0.36 BSC L 0.225 0.325 0.275 z 0.20 BSC z1 0.110 BSC z2 0.20 BSC All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type F) X3 C Y X Dimensions Y3 Y2 Y1 Y4 X1 Pin1 C X X1 X2 X3 Y Y1 Y2 Y3 Y4 Value (in mm) 0.650 0.400 0.480 0.950 1.700 0.425 0.800 1.150 1.450 2.300 X2 DMN3016LFDF Document number: DS37735 Rev. 1 - 2 6 of 7 www.diodes.com June 2016 © Diodes Incorporated DMN3016LFDF IMPORTANT NOTICE NEW PRODUCT ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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