ASI ALN68135 Npn silicon low noise rf transistor Datasheet

ALN68135
NPN SILICON LOW NOISE RF TRANSISTOR
DESCRIPTION:
The ALN68135 is a Common Emitter
Device Designed for Low Noise Class A
Amplifier Applications up to 4.0 GHz.
PACKAGE STYLE SS35
FEATURES INCLUDE:
• NF = 1.6 dB Typical @ 2 GHz
•
S21
2 = 12 dB Typical @ 2 GHz
• Replacement for NE68135
MAXIMUM RATINGS
IC
40 mA
VCBO
20 V
VCEO
12 V
VEBO
1.5 V
PDISS
290 mW @ TA ≤ 25 C
TJ
-65 C to +200 C
TSTG
-65 C to +150 C
θJC
600 C/W
O
O
O
O
O
O
CHARACTERISTICS
1 = COLLECTOR
2 & 4 = EMITTER
3 = BASE
O
TC = 25 C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
ICBO
VCB = 8.0 V
200
nA
IEBO
VEB = 1.0 V
1.0
µA
hFE
VCE = 8.0 V
250
---
COB
VCB = 10 V
0.7
pF
ft
S21
2
NF
GA
IC = 7.0 mA
50
0.2
VCE = 8.0 V
IC = 20 mA
f = 1.0 GHz
8.0
9.0
GHz
VCE = 8.0 V
IC = 20 mA
f = 2.0 GHz
9
11
dB
VCE = 8 V
IC = 7.0 mA
f = 2.0 GHz
11
1.6
12
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
2.3
dB
REV. A
1/1
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