To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS50VSJ-03 HIGH-SPEED SWITCHING USE OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 +0.3 0 –0 (1.5) FS50VSJ-03 1 B 5 0.5 q w e wr ¡4V DRIVE ¡VDSS ................................................................................. 30V ¡rDS (ON) (MAX) ............................................................. 19mΩ ¡ID ........................................................................................ 50A ¡Integrated Fast Recovery Diode (TYP.) ............. 60ns 2.6 ± 0.4 4.5 0.8 q GATE w DRAIN e SOURCE r DRAIN q e TO-220S APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS Drain-source voltage Gate-source voltage ID IDM IDA Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) IS ISM PD Tch Tstg Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature — Weight Ratings Unit VGS = 0V VDS = 0V Conditions 30 ±20 V V L = 30µH 50 200 50 A A A 50 200 45 –55 ~ +150 –55 ~ +150 A A W °C °C 1.2 g Typical value Sep. 2001 MITSUBISHI Nch POWER MOSFET FS50VSJ-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage IGSS IDSS VGS (th) rDS (ON) rDS (ON) Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Limits Test conditions Typ. Max. ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 30V, VGS = 0V 30 — — — — — — ±0.1 0.1 V µA mA ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 4V ID = 25A, VGS = 10V ID = 25A, VDS = 10V 1.0 — — — 1.5 15 21 0.375 2.0 19 35 0.475 V mΩ mΩ V — — — — 28 1600 500 260 — — — — S pF pF pF — — — — 17 90 130 125 — — — — ns ns ns ns — 1.0 1.5 V — — — 60 2.78 — °C/W ns VDS = 10V, VGS = 0V, f = 1MHz VDD = 15V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω Turn-off delay time Fall time Source-drain voltage IS = 25A, VGS = 0V Channel to case Thermal resistance Reverse recovery time Unit Min. IS = 25A, dis/dt = –50A/µs PERFORMANCE CURVES DRAIN CURRENT ID (A) 40 30 20 10 0 0 50 100 150 200 102 7 5 3 2 tw = 10ms 100ms 101 1ms 7 5 3 2 100 7 5 3 10ms DC TC = 25°C Single Pulse 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 100 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 VGS = 10V 50 TC = 25°C Pulse Test 80 5V 60 4V 40 3V 20 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 TC = 25°C Pulse Test 40 5V 4V VGS = 10V 6V 30 3V 20 PD = 45W 10 2V PD = 45W 0 2V 0 1.0 2.0 3.0 4.0 5.0 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS50VSJ-03 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) TC = 25°C Pulse Test 4.0 3.0 2.0 ID = 80A 1.0 50A 50 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 5.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25°C Pulse Test 40 VGS = 4V 30 20 10V 10 30A 0 2 4 6 DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) TC = 25°C VDS = 10V Pulse Test 80 60 40 20 0 0 2 4 6 102 7 5 3 2 VDS = 10V Pulse Test TC = 25°C 2 75°C 125°C 101 7 5 4 3 8 100 0 10 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25°C f = 1MHZ VGS = 0V 104 103 7 5 3 2 102 7 5 4 3 2 2 7 5 3 2 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 10 GATE-SOURCE VOLTAGE VGS (V) 100 CAPACITANCE Ciss, Coss, Crss (pF) 8 Ciss Coss Crss SWITCHING TIME (ns) 0 103 7 5 4 3 2 102 7 5 4 3 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) Tch = 25°C VDD = 15V VGS = 10V RGEN = RGS = 50Ω 101 0 10 td(off) tf tr td(on) 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS50VSJ-03 HIGH-SPEED SWITCHING USE 10 SOURCE CURRENT IS (A) 6 VDS = 10V 20V 4 25V 2 0 10 20 30 40 50 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 4.0 2 100 7 5 4 3 2 –50 0 50 100 VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 150 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 TC = 125°C 75°C 25°C 25 0 101 7 VGS = 10V ID = 25A 5 Pulse Test 4 3 10–1 VGS = 0V Pulse Test 75 50 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 100 Tch = 25°C ID = 50A 8 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch –c) (°C/ W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 2 0.5 100 0.2 7 0.1 5 3 2 10–1 7 5 3 2 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Sep. 2001