Schottky Barrier Diodes (SBD) MA2Q738 Silicon epitaxial planar type Unit : mm For high-frequency rectification 4.4 ± 0.3 • Forward current (average) IF(AV): 1.5 A type • Reverse voltage (DC value) VR: 40 V • Allowing automatic insertion with the emboss taping 2.15 ± 0.3 + 0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1 0.25 − 0.05 2 Symbol Rating Unit VR 40 V VRRM 40 IF(AV) 1.5 A IFSM 60 A Junction temperature Tj −40 to +125 °C Storage temperature Tstg −40 to +125 °C 1.2 ± 0.4 Reverse voltage (DC) Repetitive peak reverse voltage Average forward current*1 Non-repetitive peak forward surge current*2 1.4 ± 0.2 2.5 ± 0.3 ■ Features 0 to 0.05 1.2 ± 0.4 + 0.4 5.0 − 0.1 V 1 : Anode 2 : Cathode New Mini-Power Type Package (2-pin) Marking Symbol: PD Note) *1 : With a printed-circuit board (copper foil area 2.5 mm × 2.5 mm + 0.8 mm × 20 mm or more on both cathode and anode sides) *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Reverse current (DC) IR VR = 40 V Forward voltage (DC) VF IF = 2 A Terminal capacitance Ct VR = 10 V, f = 1 MHz Reverse recovery time* trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω Min Typ Max Unit 2 mA 0.55 V 70 pF 50 ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 20 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA2Q738 Schottky Barrier Diodes (SBD) IF(AV) Ta (1) Printed-circuit board: Glass epoxy board (2) Printed-circuit board: Alumina board Copper foil for both A and K sides 2.5 mm × 2.5 mm + 0.8 mm × 20 mm IF V F IR VR 105 104 K 75°C 25°C 20 2.5 (2) 1.5 103 (1) 1.0 0.5 − 20°C 102 10 0 50 100 10−1 150 75°C 102 1 0 0.1 VF Ta 0.2 0.3 0.4 25°C 0.5 0.6 0 10 Reverse current IR (µA) 0.5 IF = 2 A 0.3 100 mA 40 50 60 600 VR = 40 V 103 0.6 30 Ct VR 10 V 5V 0.7 20 Reverse voltage VR (V) IR T a 104 0.2 103 Forward voltage VF (V) 0.8 0.4 Ta = 125°C 10 1 Ambient temperature Ta (°C) Forward voltage VF (V) 104 Terminal capacitance Ct (pF) 0 TC = 125°C Reverse current IR (µA) 2.5 2.0 Forward current IF (mA) Average forward current IF(AV) (A) A 0.8 102 10 1 500 400 300 200 100 0.1 10 mA 0 −40 0 40 80 120 160 Ambient temperature Ta (°C) 2 200 10−1 −40 0 0 40 80 120 160 Ambient temperature Ta (°C) 200 0 10 20 30 40 50 Reverse voltage VR (V) 60