Panasonic MA2Q738 Silicon epitaxial planar type Datasheet

Schottky Barrier Diodes (SBD)
MA2Q738
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
4.4 ± 0.3
• Forward current (average) IF(AV): 1.5 A type
• Reverse voltage (DC value) VR: 40 V
• Allowing automatic insertion with the emboss taping
2.15 ± 0.3
+ 0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
1
0.25 − 0.05
2
Symbol
Rating
Unit
VR
40
V
VRRM
40
IF(AV)
1.5
A
IFSM
60
A
Junction temperature
Tj
−40 to +125
°C
Storage temperature
Tstg
−40 to +125
°C
1.2 ± 0.4
Reverse voltage (DC)
Repetitive peak reverse voltage
Average forward
current*1
Non-repetitive peak forward
surge current*2
1.4 ± 0.2
2.5 ± 0.3
■ Features
0 to 0.05
1.2 ± 0.4
+ 0.4
5.0 − 0.1
V
1 : Anode
2 : Cathode
New Mini-Power Type Package (2-pin)
Marking Symbol: PD
Note) *1 : With a printed-circuit board (copper foil area 2.5 mm × 2.5 mm
+ 0.8 mm × 20 mm or more on both cathode and anode sides)
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Reverse current (DC)
IR
VR = 40 V
Forward voltage (DC)
VF
IF = 2 A
Terminal capacitance
Ct
VR = 10 V, f = 1 MHz
Reverse recovery time*
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
Min
Typ
Max
Unit
2
mA
0.55
V
70
pF
50
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 20 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
MA2Q738
Schottky Barrier Diodes (SBD)
IF(AV)  Ta
(1) Printed-circuit board: Glass epoxy board
(2) Printed-circuit board: Alumina board
Copper foil for both A and K sides
2.5 mm × 2.5 mm + 0.8 mm × 20 mm
IF  V F
IR  VR
105
104
K
75°C 25°C
20 2.5
(2)
1.5
103
(1)
1.0
0.5
− 20°C
102
10
0
50
100
10−1
150
75°C
102
1
0
0.1
VF  Ta
0.2
0.3
0.4
25°C
0.5
0.6
0
10
Reverse current IR (µA)
0.5
IF = 2 A
0.3
100 mA
40
50
60
600
VR = 40 V
103
0.6
30
Ct  VR
10 V
5V
0.7
20
Reverse voltage VR (V)
IR  T a
104
0.2
103
Forward voltage VF (V)
0.8
0.4
Ta = 125°C
10
1
Ambient temperature Ta (°C)
Forward voltage VF (V)
104
Terminal capacitance Ct (pF)
0
TC = 125°C
Reverse current IR (µA)
2.5
2.0
Forward current IF (mA)
Average forward current IF(AV) (A)
A
0.8
102
10
1
500
400
300
200
100
0.1
10 mA
0
−40
0
40
80
120
160
Ambient temperature Ta (°C)
2
200
10−1
−40
0
0
40
80
120
160
Ambient temperature Ta (°C)
200
0
10
20
30
40
50
Reverse voltage VR (V)
60
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