DTS www.daysemi.jp Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Typical ESD Protection 2100 V HBM • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Applications SOT-363 SC-70 (6-LEADS) D1 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 G1 D2 G2 Top View S1 S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Parameter TC = 70 °C TA = 25 °C 1.3a ID 1.3a, b, c 1.2b, c TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current IDM TC = 25 °C TA = 25 °C Maximum Power Dissipation TA = 25 °C 1 IS 0.61b, c 1.25 0.8 PD W 0.74b, c 0.47b, c TA = 70 °C Operating Junction and Storage Temperature Range A 4 TC = 25 °C TC = 70 °C V 1.3a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg °C - 55 to 150 THERMAL RESISTANCE RATINGS Symbol Typical Maximum Maximum Junction-to-Ambientb, d t≤5s RthJA 130 170 Maximum Junction-to-Foot (Drain) Steady State RthJF 80 100 Parameter Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 220 °C/W. www.GD\VHPLMS 1 DTS www.daysemi.jp SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs ID = 250 µA VDS = VGS, ID = 250 µA V 20 mV/°C - 2.3 1 0.4 VDS = 0 V, VGS = ± 8 V ± 25 VDS = 0 V, VGS = ± 4.5 V 1 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 VDS ≤ 5 V, VGS = 4.5 V 4 V µA µA A VGS = 4.5 V, ID = 1 A 0.165 0.198 VGS = 2.5 V, ID = 1 A 0.187 0.225 VGS = 1.8 V, ID = 0.2 A 0.210 0.263 VDS = 4 V, ID = 1.5 A 4 VDS = 10 V, VGS = 8 V, ID = 1.5 A 1.6 2.5 0.9 1.8 Ω S Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = 10 V, VGS = 4.5 V, ID = 1.5 A 0.1 0.2 f = 1 MHz 0.4 1.9 3.8 43 65 80 120 480 720 tf 220 330 td(on) 22 33 td(on) tr td(off) tr td(off) nC VDD = 10 V, RL = 8.3 Ω ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 10 V, RL = 8.3 Ω ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω tr 46 70 645 968 215 323 kΩ ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 1 4 IS = 1.2 A, VGS = 0 V IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 9 18 ns 2 4 nC 5 4 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.GD\VHPLMS 2 DTS www.daysemi.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-3 0.5 10-4 10-5 IG - Gate Current (A) IG - Gate Current (mA) 0.4 0.3 TJ = 25 °C 0.2 TJ = 150 °C 10-6 10-7 TJ = 25 °C 10-8 0.1 10-9 10-10 0 0 3 6 9 12 VGS - Gate-to-Source Voltage (V) 0 15 Gate Current vs. Gate-to-Source Voltage 3 6 9 12 VGS - Gate-to-Source Voltage (V) 15 Gate Current vs. Gate-to-Source Voltage 1.0 4 V GS = 5 V thru 2 V 0.8 ID - Drain Current (A) ID - Drain Current (A) 3 V GS = 1.5 V 2 0.6 T C = 25 °C 0.4 T C = 125 °C 1 0.2 V GS = 1 V 0 0.0 1.0 0.5 1.5 0.0 0.0 2.0 0.6 0.3 0.9 1.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.5 8 VGS - Gate-to-Source Voltage (V) 0.25 RDS(on) - On-Resistance (Ω) T C = - 55 °C V GS = 1.8 V 0.22 V GS = 2.5 V 0.19 V GS = 4.5 V 0.16 0.13 0 1 2 3 4 ID = 1.5 A 6 V DS = 10 V V DS = 16 V V DS = 5 V 4 2 0 0.0 0.5 1.0 1.5 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge 2.0 www.GD\VHPLMS 3 DTS www.daysemi.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 ID = 1 A 1.5 V GS = 2.5 V IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 1.7 1.3 V GS = 4.5 V 1.1 T J = 150 °C T J = 25 °C 1 0.9 0.7 - 50 0.1 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 0.0 150 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 0.80 0.4 0.65 0.3 ID = 250 μA T J = 125 °C 0.2 VGS(th) (V) RDS(on) - On-Resistance (Ω) ID = 1 A T J = 25 °C 0.50 0.35 0.1 0.20 - 50 0.0 1 2 3 4 5 - 25 0 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 25 50 75 100 TJ - Temperature (°C) 125 150 Threshold Voltage 10 5 Limited by RDS(on)* 100 μs ID - Drain Current (A) Power (W) 4 3 2 1 1 ms 10 ms 0.1 100 ms 1 TA = 25 °C Single Pulse 0 0.01 0.1 1 10 100 Time (s) Single Pulse Power, Junction-to-Ambient www.GD\VHPLMS 4 600 0.01 0.1 1 s, 10 s DC BVDSS Limited 100 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient DTS www.daysemi.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.4 ID - Drain Current (A) 1.8 Package Limited 1.2 0.6 0.0 0 25 50 75 100 TC - Case Temperature (°C) 125 150 1.5 0.75 1.2 0.60 0.9 0.45 Power (W) Power (W) Current Derating* 0.6 0.3 0.30 0.15 0.0 0.00 0 25 50 75 100 TF - Case Temperature (°C) Power, Junction-to-Foot 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.GD\VHPLMS 5 DTS www.daysemi.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 P DM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 170 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot . www.GD\VHPLMS 6 1 10 Package Information SCĆ70: 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L A1 INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.026BSC 1.20 1.30 1.40 0.047 0.051 0.055 0.10 0.20 0.30 0.004 0.008 0.012 7_Nom 7_Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 www.GD\VHPLMS 1 Application Note RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 APPLICATION NOTE Return to Index www.GD\VHPLMS 1 0.026 (0.648) 0.045 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index (1.143) 0.096 (2.438) (1.702) Legal Disclaimer Notice www.daysemi.jp Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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