DinTek DTS2212 Dual n-channel 20 v (d-s) mosfet Datasheet

DTS
www.daysemi.jp
Dual N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω)
ID (A)a
0.198 at VGS = 4.5 V
1.3a
0.225 at VGS = 2.5 V
1.3a
0.263 at VGS = 1.8 V
1.3a
Qg (Typ.)
0.9 nC
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Typical ESD Protection 2100 V HBM
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Applications
SOT-363
SC-70 (6-LEADS)
D1
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
G1
D2
G2
Top View
S1
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±8
Parameter
TC = 70 °C
TA = 25 °C
1.3a
ID
1.3a, b, c
1.2b, c
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
IDM
TC = 25 °C
TA = 25 °C
Maximum Power Dissipation
TA = 25 °C
1
IS
0.61b, c
1.25
0.8
PD
W
0.74b, c
0.47b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
4
TC = 25 °C
TC = 70 °C
V
1.3a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
TJ, Tstg
°C
- 55 to 150
THERMAL RESISTANCE RATINGS
Symbol
Typical
Maximum
Maximum Junction-to-Ambientb, d
t≤5s
RthJA
130
170
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
80
100
Parameter
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 220 °C/W.
www.GD\VHPLMS
1
DTS
www.daysemi.jp
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
Gate-Source Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
ID = 250 µA
VDS = VGS, ID = 250 µA
V
20
mV/°C
- 2.3
1
0.4
VDS = 0 V, VGS = ± 8 V
± 25
VDS = 0 V, VGS = ± 4.5 V
1
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
10
VDS ≤ 5 V, VGS = 4.5 V
4
V
µA
µA
A
VGS = 4.5 V, ID = 1 A
0.165
0.198
VGS = 2.5 V, ID = 1 A
0.187
0.225
VGS = 1.8 V, ID = 0.2 A
0.210
0.263
VDS = 4 V, ID = 1.5 A
4
VDS = 10 V, VGS = 8 V, ID = 1.5 A
1.6
2.5
0.9
1.8
Ω
S
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDS = 10 V, VGS = 4.5 V, ID = 1.5 A
0.1
0.2
f = 1 MHz
0.4
1.9
3.8
43
65
80
120
480
720
tf
220
330
td(on)
22
33
td(on)
tr
td(off)
tr
td(off)
nC
VDD = 10 V, RL = 8.3 Ω
ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 10 V, RL = 8.3 Ω
ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω
tr
46
70
645
968
215
323
kΩ
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
1
4
IS = 1.2 A, VGS = 0 V
IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
9
18
ns
2
4
nC
5
4
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.GD\VHPLMS
2
DTS
www.daysemi.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10-3
0.5
10-4
10-5
IG - Gate Current (A)
IG - Gate Current (mA)
0.4
0.3
TJ = 25 °C
0.2
TJ = 150 °C
10-6
10-7
TJ = 25 °C
10-8
0.1
10-9
10-10
0
0
3
6
9
12
VGS - Gate-to-Source Voltage (V)
0
15
Gate Current vs. Gate-to-Source Voltage
3
6
9
12
VGS - Gate-to-Source Voltage (V)
15
Gate Current vs. Gate-to-Source Voltage
1.0
4
V GS = 5 V thru 2 V
0.8
ID - Drain Current (A)
ID - Drain Current (A)
3
V GS = 1.5 V
2
0.6
T C = 25 °C
0.4
T C = 125 °C
1
0.2
V GS = 1 V
0
0.0
1.0
0.5
1.5
0.0
0.0
2.0
0.6
0.3
0.9
1.2
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.5
8
VGS - Gate-to-Source Voltage (V)
0.25
RDS(on) - On-Resistance (Ω)
T C = - 55 °C
V GS = 1.8 V
0.22
V GS = 2.5 V
0.19
V GS = 4.5 V
0.16
0.13
0
1
2
3
4
ID = 1.5 A
6
V DS = 10 V
V DS = 16 V
V DS = 5 V
4
2
0
0.0
0.5
1.0
1.5
ID - Drain Current (A)
Qg - Total Gate Charge (nC)
On-Resistance vs. Drain Current
Gate Charge
2.0
www.GD\VHPLMS
3
DTS
www.daysemi.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
ID = 1 A
1.5
V GS = 2.5 V
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
1.7
1.3
V GS = 4.5 V
1.1
T J = 150 °C
T J = 25 °C
1
0.9
0.7
- 50
0.1
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
125
0.0
150
0.3
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
0.80
0.4
0.65
0.3
ID = 250 μA
T J = 125 °C
0.2
VGS(th) (V)
RDS(on) - On-Resistance (Ω)
ID = 1 A
T J = 25 °C
0.50
0.35
0.1
0.20
- 50
0.0
1
2
3
4
5
- 25
0
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
25
50
75
100
TJ - Temperature (°C)
125
150
Threshold Voltage
10
5
Limited by RDS(on)*
100 μs
ID - Drain Current (A)
Power (W)
4
3
2
1
1 ms
10 ms
0.1
100 ms
1
TA = 25 °C
Single Pulse
0
0.01
0.1
1
10
100
Time (s)
Single Pulse Power, Junction-to-Ambient
www.GD\VHPLMS
4
600
0.01
0.1
1 s, 10 s
DC
BVDSS Limited
100
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
DTS
www.daysemi.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.4
ID - Drain Current (A)
1.8
Package Limited
1.2
0.6
0.0
0
25
50
75
100
TC - Case Temperature (°C)
125
150
1.5
0.75
1.2
0.60
0.9
0.45
Power (W)
Power (W)
Current Derating*
0.6
0.3
0.30
0.15
0.0
0.00
0
25
50
75
100
TF - Case Temperature (°C)
Power, Junction-to-Foot
125
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.GD\VHPLMS
5
DTS
www.daysemi.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P DM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 170 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
4. Surface Mounted
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
.
www.GD\VHPLMS
6
1
10
Package Information
SCĆ70:
6ĆLEADS
MILLIMETERS
6
5
Dim
A
A1
A2
b
c
D
E
E1
e
e1
L
4
E1 E
1
2
3
-B-
e
b
e1
D
-Ac
A2 A
L
A1
INCHES
Min
Nom
Max
Min
Nom
Max
0.90
–
1.10
0.035
–
0.043
–
–
0.10
–
–
0.004
0.80
–
1.00
0.031
–
0.039
0.15
–
0.30
0.006
–
0.012
0.10
–
0.25
0.004
–
0.010
1.80
2.00
2.20
0.071
0.079
0.087
1.80
2.10
2.40
0.071
0.083
0.094
1.15
1.25
1.35
0.045
0.049
0.053
0.65BSC
0.026BSC
1.20
1.30
1.40
0.047
0.051
0.055
0.10
0.20
0.30
0.004
0.008
0.012
7_Nom
7_Nom
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5550
www.GD\VHPLMS
1
Application Note
RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead
0.067
APPLICATION NOTE
Return to Index
www.GD\VHPLMS
1
0.026
(0.648)
0.045
0.016
0.026
0.010
(0.406)
(0.648)
(0.241)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
(1.143)
0.096
(2.438)
(1.702)
Legal Disclaimer Notice
www.daysemi.jp
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Din-Tek’s knowledge of typical
requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death.
Customers using or selling Din-Tek products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Din-Tek personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Din-Tek. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
1
Similar pages