DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC817W NPN general purpose transistor Product specification Supersedes data of 1997 Mar 05 1999 Apr 15 Philips Semiconductors Product specification NPN general purpose transistor BC817W FEATURES PINNING • High current (max. 500 mA) PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complement: BC807W. 3 handbook, halfpage 3 MARKING TYPE NUMBER TYPE NUMBER MARKING CODE(1) 1 MARKING CODE(1) BC817W 6D∗ BC818W 6H∗ BC817-16W 6A∗ BC818-16W 6E∗ BC817-25W 6B∗ BC818-25W 6F∗ BC817-40W 6C∗ BC818-40W 6G∗ 2 1 2 Top view MAM062 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base; IC = 10 mA − 45 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 500 mA ICM peak collector current − 1 A IBM peak base current − 200 mA Ptot total power dissipation − 200 mW Tstg storage temperature Tamb ≤ 25 °C; note 1 −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 15 2 Philips Semiconductors Product specification NPN general purpose transistor BC817W THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 625 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current IEBO emitter cut-off current hFE DC current gain BC817W CONDITIONS MIN. MAX. UNIT IE = 0; VCB = 20 V − 100 nA IE = 0; VCB = 20 V; Tj = 150 °C − 5 µA IC = 0; VEB = 5 V − 100 nA IC = 100 mA; VCE = 1 V; note 1; see Figs 2, 3 and 4 100 600 BC817-16W 100 250 BC817-25W 160 400 BC817-40W 250 600 DC current gain IC = 500 mA; VCE = 1 V; note 1 40 − VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1 − 700 mV VBE base-emitter voltage IC = 500 mA; VCE = 1 V; note 1 − 1.2 mV Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 5 pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − MHz Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 1999 Apr 15 3 Philips Semiconductors Product specification NPN general purpose transistor BC817W MBH721 20 handbook, full pagewidth hFE 160 VCE = 1 V 120 80 40 0 10−1 1 10 102 IC (mA) 103 BC817-16W. Fig.2 DC current gain; typical values. MBH720 500 handbook, full pagewidth hFE 400 VCE = 1 V 300 200 100 0 10−1 1 10 BC817-25W. Fig.3 DC current gain; typical values. 1999 Apr 15 4 102 IC (mA) 103 Philips Semiconductors Product specification NPN general purpose transistor BC817W MBH722 500 handbook, full pagewidth hFE 400 VCE = 1 V 300 200 100 0 10−1 1 10 BC817-40W. Fig.4 DC current gain; typical values. 1999 Apr 15 5 102 IC (mA) 103 Philips Semiconductors Product specification NPN general purpose transistor BC817W PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 1999 Apr 15 REFERENCES IEC JEDEC EIAJ SC-70 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN general purpose transistor BC817W DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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