IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 OptiMOS®-T Power-Transistor Product Summary V DS 40 V R DS(on),max (SMD version) 2.0 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPB120N04S3-02 PG-TO263-3-2 3PN0402 IPI120N04S3-02 PG-TO262-3-1 3PN0402 IPP120N04S3-02 PG-TO220-3-1 3PN0402 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 120 Unit A 120 Pulsed drain current2) I D,pulse T C=25 °C 480 Avalanche energy, single pulse E AS I D=80 A 1880 mJ Gate source voltage V GS ±20 V Power dissipation P tot 300 W Operating and storage temperature T j, T stg -55 ... +175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.0 55/175/56 page 1 2007-04-30 IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - 0.5 Thermal resistance, junction ambient, leaded R thJA - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 40 - - Gate threshold voltage V GS(th) V DS=V GS, I D=230 µA 2.1 3.0 4.0 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - - 1 - - 100 V DS=40 V, V GS=0 V, T j=125 °C2) V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance RDS(on) V GS=10 V, I D=80 A - 1.65 2.3 mΩ V GS=10 V, I D=80 A, SMD version - 1.35 2 Rev. 1.0 page 2 2007-04-30 IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 Parameter Symbol Values Conditions Unit min. typ. max. - 11000 14300 pF - 3000 3900 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 470 710 Turn-on delay time t d(on) - 35 - Rise time tr - 19 - Turn-off delay time t d(off) - 57 - Fall time tf - 18 - Gate to source charge Q gs - 54 70 Gate to drain charge Q gd - 38 67 Gate charge total Qg - 160 210 Gate plateau voltage V plateau - 5 - V - - 120 A - - 480 - 0.83 1.2 V - 70 - ns - 145 - nC V GS=0 V, V DS=25 V, f =1 MHz V DD=20 V, V GS=10 V, I D=80 A, R G=1.3 Ω ns Gate Charge Characteristics2) V DD=32 V, I D=80 A, V GS=0 to 10 V nC Reverse Diode2) Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=20 V, I F=I S, di F/dt =100 A/µs 1) Current is limited by bondwire; with an R thJC = 0.5 K/W the chip is able to carry 306 A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2007-04-30 IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 350 140 300 120 250 100 200 80 I D [A] P tot [W] 1 Power dissipation 150 60 100 40 50 20 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0; SMD Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 10 µs 100 µs 1 ms 100 100 I D [A] Z thJC [K/W] 0.5 10-1 0.1 0.05 10 10-2 0.01 single pulse -3 1 10 0.1 1 10 100 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 10-6 page 4 2007-04-30 IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS parameter: V GS 8 500 10 V 7V 7 6.5 V 400 300 R DS(on) [mΩ] 6 I D [A] 6V 200 5 5V 5.5 V 6V 4 3 5.5 V 7V 2 100 10 V 5V 1 0 0 0 1 2 3 4 5 0 6 100 200 V DS [V] 300 400 500 I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 80 A; V GS = 10 V; SMD parameter: T j 3 400 350 2.5 300 R DS(on) [mΩ] I D [A] 250 200 150 100 2 1.5 175 °C 1 25 °C 50 -55 °C 0 2 3 4 5 6 7 V GS [V] Rev. 1.0 0.5 -60 -20 20 60 100 140 180 T j [°C] page 5 2007-04-30 IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 4 3.5 V GS(th) [V] C [pF] 2300 µA 3 Ciss 104 230 µA 2.5 Coss 103 2 Crss 1.5 102 1 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 V DS [V] T j [°C] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: T j(start) 103 1000 102 100 25°C 100°C I F [A] I AV [A] 150°C 25 °C 175 °C 101 10 100 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] Rev. 1.0 1 10 100 1000 t AV [µs] page 6 2007-04-30 IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 13 Typical avalanche energy 14 Typ. drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 52 8000 7000 20 A 48 6000 V BR(DSS) [V] E AS [mJ] 5000 4000 40 A 3000 44 40 2000 36 80 A 1000 32 0 25 75 125 -60 175 -20 T j [°C] 20 60 100 140 180 T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 80 A pulsed parameter: V DD 12 V GS Qg 10 8V 32 V V GS [V] 8 6 V g s(th) 4 2 Q g (th) Q sw Q gs 0 0 50 100 150 Q gate Q gd 200 Q gate [nC] Rev. 1.0 page 7 2007-04-30 IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non‑infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2007-04-30 IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 Revision History Version Rev. 1.0 Date Changes page 9 2007-04-30