APTM20UM03FAG VDSS = 200V RDSon = 3mΩ typ @ Tj = 25°C ID = 580A @ Tc = 25°C Single Switch MOSFET Power Module SK S D DK G S D Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 580 434 2320 ±30 3.6 2270 100 50 3000 Unit V A V mΩ W A July, 2006 SK mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM20UM03FAG Rev 1 DK Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control APTM20UM03FAG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Min VGS = 10V, ID = 290A VGS = VDS, ID = 15mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VSD dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X trr Reverse Recovery Time Qrr Reverse Recovery Charge 3 3 Min VGS = 10V VBus = 100V ID = 580A Typ 43.3 13.9 0.87 840 Unit Max Unit µA mΩ V nA nF nC 402 32 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 580A R G = 0.8Ω 64 116 5 mJ 5.6 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 580A, R G = 0.8Ω Test Conditions ns 88 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 580A, R G = 0.8Ω 5.6 mJ 5.9 Min Typ Tj = 25°C Max 580 434 1.3 8 230 Tj = 125°C 450 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 580A IS = - 580A VR = 500V diS/dt = 600A/µs Max 500 3000 3.6 5 ±400 318 Source - Drain diode ratings and characteristics Symbol IS Typ Tj = 25°C Tj = 125°C Tj = 25°C 5.4 Tj = 125°C 20.4 Unit A V V/ns ns µC July, 2006 IDSS Characteristic X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 580A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com 2–6 APTM20UM03FAG Rev 1 Symbol APTM20UM03FAG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, Isol<1mA, 50/60Hz Torque Mounting torque 2500 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.055 150 125 100 5 3.5 280 Unit °C/W V °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM20UM03FAG Rev 1 July, 2006 SP6 Package outline (dimensions in mm) APTM20UM03FAG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.06 0.9 0.05 0.04 0.7 0.03 0.5 0.02 0.3 0.01 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 1400 VGS=15V 3000 9V 8.5V 2000 8V 7.5V 1000 7V ID, Drain Current (A) 6.5V 0 VDS > ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 1200 1000 800 600 TJ=25°C 400 TJ=125°C 200 TJ=-55°C 0 0 4 8 12 16 20 24 28 0 1.2 Normalized to V GS=10V @ 290A 1.1 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 600 RDS(on) vs Drain Current ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) VGS=10V 1 VGS=20V 0.9 0.8 500 400 300 200 100 0 0 225 450 675 900 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 ID, Drain Current (A) 10V 4–6 APTM20UM03FAG Rev 1 4000 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) 1.1 1.0 0.9 0.8 0.7 VGS=10V ID= 290A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 0.6 limited by RDSon 1000 100µs 100 1ms 10ms 100ms Single pulse TJ=150°C TC=25°C 10 1 -50 -25 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss Coss 10000 Crss 1000 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 I D=580A V DS=40V 12 TJ =25°C VDS=100V 10 8 VDS=160V 6 4 2 0 0 120 240 360 480 600 720 840 960 Gate Charge (nC) July, 2006 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 10000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 www.microsemi.com 5–6 APTM20UM03FAG Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM20UM03FAG APTM20UM03FAG Delay Times vs Current Rise and Fall times vs Current 160 120 VDS=133V RG=0.8Ω T J=125°C L=100µH 60 40 t r and tf (ns) t d(on) and td(off) (ns) t d(off) 80 td(on) 120 100 80 tr 60 20 0 100 200 300 400 500 600 700 800 900 I D, Drain Current (A) 0 100 200 300 400 500 600 700 800 900 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 20 V DS=133V RG=0.8Ω T J=125°C L=100µH 10 8 Eoff Eon 6 4 2 E off Switching Energy (mJ) 12 0 100 200 300 400 500 600 700 800 900 16 14 250 200 150 100 50 V DS=133V D=50% RG=0.8Ω T J=125°C T C=75°C 0 70 170 ZCS ZVS Hard switching 270 370 470 Eon 10 8 6 4 0 1 2 3 4 5 6 7 Gate Resistance (Ohms) 8 9 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 300 Eoff 12 Operating Frequency vs Drain Current 350 VDS=133V ID=580A TJ=125°C L=100µH 18 I D, Drain Current (A) Frequency (kHz) tf 40 20 Eon and Eoff (mJ) V DS=133V R G=0.8Ω T J=125°C L=100µH 140 100 570 I D, Drain Current (A) 10000 1000 100 TJ=150°C T J=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM20UM03FAG Rev 1 July, 2006 VSD, Source to Drain Voltage (V)