MITSUBISHI IGBT MODULES CM75TU-34KA HIGH POWER SWITCHING USE CM75TU-34KA ● IC ..................................................................... 75A ● VCES .......................................................... 1700V ● Insulated Type ● 6-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 107 90 ±0.25 23 12 4–φ5.5 MOUNTING HOLES CM G E 12 11 G E V 12 23 21.7 GuN EuN GvN EvN GwN EwN E G E W 23 11 12 21.7 0.5 G 48.5 11 14.4 21.7 E 3.75 G U 5–M5NUTS Tc measured point 2.8 11 21.7 E +1 29 –0.5 0.8 11 Tc measured point 8.1 7.1 4 LABEL P 26 102 80 ±0.25 11 G 17 P N GuP EuP GvP EvP GwP EwP (4) 3.75 12 GUP EUP GVP EVP U V GUN EUN GVN EVN GWP EWP W GWN EWN N CIRCUIT DIAGRAM Sep. 2001 MITSUBISHI IGBT MODULES CM75TU-34KA HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Torque strength — Weight Conditions G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Ratings 1700 ±20 75 150 75 150 660 –40 ~ +150 –40 ~ +125 3500 2.5 ~ 3.5 2.5 ~ 3.5 680 (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M5 Typical value Unit V V A A W °C °C V N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Parameter Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 7.5mA, VCE = 10V 4 5.5 7 V IGES Gate leakage current Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge — — — — — — — — — — — — — — — — — — — — 3.2 3.8 — — — 340 — — — — — 5.3 — 2.2 — — 0.09 — 0.5 4.0 — 10.5 1.8 0.55 — 100 100 400 800 200 — 4.6 — 0.19 0.35 — 0.13*3 µA VCE(sat) VGE = VGES, VCE = 0V Tj = 25°C IC = 75A, VGE = 15V Tj = 125°C VEC(Note 1) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Thermal resistance*1 Contact thermal resistance Thermal resistance VCE = 10V VGE = 0V VCC = 1000V, IC = 75A, VGE = 15V VCC = 1000V, IC = 75A VGE1 = VGE2 = 15V RG = 4.2Ω, Inductive load switching operation IE = 75A IE = 75A, VGE = 0V, Tj = 25°C IE = 75A, VGE = 0V, Tj = 125°C IGBT part (1/6 module) FWDi part (1/6 module) Case to fin, Thermal compound applied*2 (1/6 module) Tc measured point is just under the chips mA V nF nC ns ns µC V V °C/W Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Sep. 2001 MITSUBISHI IGBT MODULES CM75TU-34KA HIGH POWER SWITCHING USE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 150 12 15 14 100 COLLECTOR CURRENT (A) VGE = 20V 125 10 75 9 50 8 25 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 150 11 0 2 4 6 8 100 75 50 25 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 6 VGE = 15V Tj = 25°C 5 Tj = 125°C 4 3 2 1 0 0 20 40 60 80 100 120 140 Tj = 25°C 8 6 IC = 150A 4 IC = 75A 2 0 IC = 30A 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 20 102 CAPACITANCE Cies, Coes, Cres (nF) Tj = 25°C 7 5 3 2 102 7 5 3 2 101 10 COLLECTOR CURRENT IC (A) 103 EMITTER CURRENT IE (A) VCE = 10V Tj = 25°C Tj = 125°C 125 0 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) Tj = 25°C 1 2 3 4 5 EMITTER-COLLECTOR VOLTAGE VEC (V) 7 5 3 2 101 Cies 7 5 3 2 100 7 5 3 2 Coes VGE = 0V Cres 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Sep. 2001 MITSUBISHI IGBT MODULES CM75TU-34KA HIGH POWER SWITCHING USE SWITCHING TIMES (ns) 104 7 5 3 2 tf 103 7 5 3 2 td(off) 102 7 5 Conditions: 3 2 VCC = 1000V td(on) 101 VGE = ±15V 7 RG = 4.2Ω 5 tr 3 Tj = 125°C 2 Inductive load 100 0 10 2 3 5 7 101 2 3 5 7 102 REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 Conditions: 5 VCC = 1000V VGE = ±15V 3 RG = 4.2Ω 2 Tj = 25°C Inductive load 102 Irr 7 5 trr 3 2 101 0 10 COLLECTOR CURRENT IC (A) 2 3 3 2 10–1 7 5 3 2 7 5 3 2 10–2 10–2 7 5 3 2 10–3 7 5 3 2 Single Pulse TC = 25°C 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TMIE (s) 5 7 102 3 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.19°C/W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.35°C/W 100 10–1 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 7 5 3 2 5 7 101 IC = 75A 16 VCC = 800V VCC = 1000V 12 8 4 0 0 100 200 300 400 500 GATE CHARGE QG (nC) Sep. 2001