MBR20L80CT, MBRF20L80CT SWITCHMODE™ Power Rectifier 80 V, 20 A http://onsemi.com Features and Benefits • • • • SCHOTTKY BARRIER RECTIFIER 20 AMPERES 80 VOLTS Low Power Loss/High Efficiency High Surge Capacity 20 A Total (10 A Per Diode Leg) These are Pb−Free Devices Applications 1 • Power Supply − Output Rectification • Power Management • Instrumentation 2, 4 3 • • • • • • MARKING DIAGRAM 4 Mechanical Characteristics: Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ESD Rating: Human Body Model = 3B Machine Model = C TO−220AB CASE 221A PLASTIC 1 2 AYWW B20L80G AKA 3 MAXIMUM RATINGS AYWW B20L80G AKA Please See the Table on the Following Page 1 ISOLATED TO−220 CASE 221D STYLE 3 2 3 A Y WW B20L80 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2009 January, 2009 − Rev. 1 1 Publication Order Number: MBR20L80CT/D MBR20L80CT, MBRF20L80CT MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 80 V Average Rectified Forward Current (TC = 137°C) Per Diode Per Device IF(AV) Peak Repetitive Forward Current (Square Wave, 20 kHz, TC = 151°C) IFM 20 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 175 A Storage Temperature Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −20 to +150 °C > 400 > 8000 V A 10 20 ESD Ratings: Machine Model = C Human Body Model = 3B Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance (MBR20L80CT) (MBRF20L80CT) Symbol Value RqJC RqJA RqJC RqJA 2.0 70 4.2 75 − Junction−to−Case − Junction−to−Ambient − Junction−to−Case − Junction−to−Ambient Unit °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Symbol Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 3.0 A, TJ = 25°C) (iF = 3.0 A, TJ = 125°C) (iF = 10 A, TJ = 25°C) (iF = 10 A, TJ = 125°C) (iF = 20 A, TJ = 25°C) (iF = 20 A, TJ = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TJ = 125°C) (Rated DC Voltage, TJ = 25°C) iR Min Typ Max − − − − − − 0.45 0.35 0.56 0.51 0.69 0.62 0.50 0.44 0.67 0.61 0.85 0.74 − − 30 0.06 50 0.50 V mA 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. DEVICE ORDERING INFORMATION Package Type Shipping† MBR20L80CTG TO−220AB (Pb−Free) 50 Units / Rail MBRF20L80CTG TO−220FP (Pb−Free) 50 Units / Rail Device Order Number http://onsemi.com 2 Unit MBR20L80CT, MBRF20L80CT 100 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 100 10 125°C 1.0 150°C 0.1 0 TJ = 25°C 0.2 0.4 0.6 0.8 1.0 1.2 125°C 1.0 150°C TJ = 25°C 0.1 0.0 1.4 1.0 1.2 1.4 1.0E+00 150°C IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 1.0E−01 150°C 1.0E−02 125°C 125°C 1.0E−03 1.0E−04 1.0E−04 1.0E−05 1.0E−05 TJ = 25°C 1.0E−06 TJ = 25°C 1.0E−06 0 10 20 30 40 50 60 70 80 1.0E−07 0 VR, REVERSE VOLTAGE (V) 10 20 30 40 50 60 70 80 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Voltage Figure 4. Maximum Reverse Voltage 20 6 RqJC = 2°C/W dc 14 SQUARE WAVE 10 8 6 4 2 IF, AVERAGE FORWARD CURRENT (A) IF, AVERAGE FORWARD CURRENT (A) 0.8 Figure 2. Maximum Forward Voltage 1.0E−03 12 0.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.0E−02 16 0.4 Figure 1. Typical Forward Voltage 1.0E−01 18 0.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.0E+00 1.0E−07 10 0 110 115 120 125 130 135 140 145 150 155 160 RqJA = 70°C/W 5 dc 4 3 SQUARE WAVE 2 1 0 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Case per Leg − MBR20L80CTG Figure 6. Current Derating, Ambient per Leg − MBR20L80CTG http://onsemi.com 3 MBR20L80CT, MBRF20L80CT 6 dc 16 14 12 SQUARE WAVE 10 8 6 4 2 0 80 90 100 110 120 130 140 RqJC = 75°C/W IF, AVERAGE FORWARD CURRENT (A) RqJC = 4.2°C/W 18 150 5 4 dc 3 SQUARE WAVE 2 1 0 160 0 20 80 100 120 140 160 Figure 7. Current Derating, Case per Leg − MBRF20L80CTG Figure 8. Current Derating, Ambient per Leg − MBRF20L80CTG 10000 TJ = 25°C TJ = 150°C 14 12 SQUARE WAVE 10 dc 8 6 4 1000 100 2 0 0 2 4 6 8 10 12 14 16 18 IO, AVERAGE FORWARD CURRENT (A) 10 20 0 10 20 30 40 50 60 VR, REVERSE VOLTAGE (V) Figure 9. Forward Power Dissipation R(t), TRANSIENT THERMAL RESISTANCE 60 TA, AMBIENT TEMPERATURE (°C) 18 16 40 TC, CASE TEMPERATURE (°C) C, CAPACITANCE (pF) PFO, AVERAGE POWER DISSIPATION (W) IF, AVERAGE FORWARD CURRENT (A) 20 70 80 Figure 10. Capacitance 100 D = 0.5 10 0.2 0.1 1 0.05 P(pk) 0.01 t1 0.1 t2 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 DUTY CYCLE, D = t1/t2 0.001 0.1 0.01 1 10 t1, TIME (sec) Figure 11. Thermal Response Junction−to−Ambient for MBR20L80CT http://onsemi.com 4 100 1000 R(t), TRANSIENT THERMAL RESISTANCE MBR20L80CT, MBRF20L80CT 10 1 D = 0.5 0.2 0.1 0.05 P(pk) 0.1 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 1 0.1 10 100 1000 t1, TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 12. Thermal Response Junction−to−Case for MBR20L80CT 10 D = 0.5 1.0 0.1 0.2 0.1 0.05 0.02 P(pk) 0.01 0.01 t1 SINGLE PULSE 0.001 0.000001 0.00001 t2 DUTY CYCLE, D = t1/t2 0.0001 0.001 0.1 0.01 1.0 ZqJC(t) = r(t) RqJC RqJC = 4.2°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 10 100 1000 t1, TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 13. Thermal Response Junction−to−Case for MBRF20L80CT 100 10 D = 0.5 0.2 0.1 0.05 0.02 1.0 0.01 P(pk) 0.1 0.01 0.001 0.000001 t1 SINGLE PULSE 0.00001 t2 DUTY CYCLE, D = t1/t2 0.0001 0.001 0.01 0.1 1.0 ZqJC(t) = r(t) RqJC RqJC = 4.2°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 10 t1, TIME (sec) Figure 14. Thermal Response Junction−to−Ambient for MBRF20L80CT http://onsemi.com 5 100 1000 MBR20L80CT, MBRF20L80CT PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF −T− B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. http://onsemi.com 6 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MBR20L80CT, MBRF20L80CT PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE J −T− −B− F SEATING PLANE C S Q U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M Y NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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