Fairchild FJC690 Camera strobe flash application Datasheet

FJC690
FJC690
Camera Strobe Flash Application
• Complement to FJC790
• High Collector Current
• Low Collector-Emitter Saturation Voltage
SOT-89
1
Marking: F69
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
45
Units
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
PC
Power Dissipation
TJ
TSTG
2
A
0.5
W
Junction Temperature
150
°C
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC = 100µA, IE = 0
Min.
45
BVCEO
Collector-Emitter Breakdown Voltage
IC = 10mA, IB = 0
45
BVEBO
Emitter-Base Breakdown Voltage
IE = 100µA, IC = 0
5
ICEO
Collector Cut-off Current
VCE = 35V, VB = 0
IEBO
Emitter Cut-off Current
VEB = 4V, IC = 0
hFE
DC Current Gain
VCE = 2V, IC = 100mA
VCE = 2V, IC = 1mA
VCE = 2V, IC = 2mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 0.1A, IB = 0.5mA
IC = 1A, IB = 5mA
Typ.
Max.
Units
V
V
V
0.1
µA
0.1
µA
80
300
mV
mV
500
400
150
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1A, IB = 10mA
0.9
V
VBE(on)
Base-Emitter On Voltage
VCE = 2V, IC = 1A
0.85
V
COB
Collector Output Capacitance
VCB = 10V, IE = 0,
f = 1MHz
©2004 Fairchild Semiconductor Corporation
20
pF
Rev. A, April 2004
FJC690
Package Dimensions
SOT-89
1.50 ±0.20
4.50 ±0.20
(0.40)
4.10
(1.10)
2.50
±0.20
C0.2
±0.20
(0.50)
1.65 ±0.10
0.50 ±0.10
0.40 ±0.10
0.40 +0.10
–0.05
1.50 TYP 1.50 TYP
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. A, April 2004
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Definition of Terms
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
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First Production
This datasheet contains preliminary data, and
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©2004 Fairchild Semiconductor Corporation
Rev. I10
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