Renesas HZN6.8ZMFA Silicon planar zener diode for surge absorb Datasheet

HZN6.8ZMFA
Silicon Planar Zener Diode for Surge Absorb
REJ03G0032-0100Z
(Previous: ADE-208-1456)
Rev.1.00
May.08. 2003
Features
• HZN6.8ZMFA has four devices in a monolithic, and can absorb surge.
• VSON-5T Package is suitable for high density surface mounting.
Ordering Information
Type No.
Laser Mark
Package Code
HZN6.8ZMFA
68∗(∗ : Let to Month Code)
VSON-5T
Pin Arrangement
1
2
5
4
3
(Top View)
Rev.1.00, May.08.2003, page 1 of 6
1. Cathode
2. Cathode
3. Cathode
4. Anode
5. Cathode
HZN6.8ZMFA
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
1
Value
Unit
Power dissipation
Pd *
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Four device total, See Fig.2.
Electrical Characteristics *1
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Zener voltage
VZ
6.47
—
7.00
V
IZ = 5 mA, 40 ms pulse
Reverse current
IR
—
—
0.5
µA
VR = 3.5 V
Capacitance
C
—
—
25
pF
VR = 0 V, f = 1 MHz
rd
—
—
30
Ω
IZ = 5 mA
—
25
—
—
kV
C = 150 pF, R = 330 Ω, Both forward
and reverse direction 10 pulse
Dynamic resistance
2
3
ESD-Capability * *
Notes: 1. Per one device.
2. Failure criterion ; IR > 0.5 µA at VR = 3.5 V.
3. Between cathode and anode.
Month Code
Month of Manufacture
Month Code
Month of Manufacture
Month Code
January
A
July
G
February
B
August
H
March
C
September
J
April
D
October
K
May
E
November
L
June
F
December
M
Rev.1.00, May.08.2003, page 2 of 6
HZN6.8ZMFA
Main Characteristic
10-2
250
20h × 15w × 0.8t
Unit: mm
10-4
10-5
10-6
0
2
4
6
8
Zener Voltage VZ (V)
1.0
150
With polyimide board
100
50
0
50
100
150
200
Ambient Temperature Ta (˚C)
Fig.2 Power Dissipation vs. Ambient Temperature
104
PRSM
t
Ta = 25°C
nonrepetitive
103
102
10
1.0
10–5
10–4
10–3
Time t (s)
10–2
Fig.3 Surge Reverse Power Ratings
Rev.1.00, May.08.2003, page 3 of 6
1.75
1.5
0
10
Fig.1 Zener current vs. Zener voltage
Nonrepetitive Surge Reverses Power PRSM (W)
3.0 3.8
10-3
2.45
Power Dissipation Pd (mW)
Zener Current IZ (A)
0.3
200
10–1
1.0
HZN6.8ZMFA
Main Characteristic (cont.)
Transient Thermal Impedance Zth (°C/W)
104
103
102
10
1.0
10–2
10–1
1.0
Time t (s)
10
Fig.4 Transient Thermal Impedance
Rev.1.00, May.08.2003, page 4 of 6
102
103
HZN6.8ZMFA
Package Dimensions
As of January, 2003
1.6 ± 0.05
(0.1)
0.2
0.5
+0.1
0.12 –0.05
1.0 ± 0.1
0.5 Max
0.5
(0.1)
1.2 ± 0.1
0.2
1.6 ± 0.05
Unit: mm
+0.1
5 – 0.2 –0.05
Package Code
JEDEC
JEITA
Mass (reference value)
Rev.1.00, May.08.2003, page 5 of 6
VSON-5T
—
—
0.002 g
HZN6.8ZMFA
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with
them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they
do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts,
programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these
materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers
contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed
herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information
as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage,
liability or other loss resulting from the information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially
at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained
herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be
imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
http://www.renesas.com
Copyright © 2003. Renesas Technology Corporation, All rights reserved. Printed in Japan.
Colophon 0.0
Rev.1.00, May.08.2003, page 6 of 6
Similar pages