GN1010 GaAs MMICs GN1010 GaAs N-Channel MES IC Unit : mm For high-output high-gain amplification +0.2 2.8 –0.3 +0.2 0.65±0.15 1.5 –0.3 0.65±0.15 ■ Features Parameter Symbol Rating VDS 6 Power supply voltage 2 +0.1 0.8 0.4±0.2 Unit 1 : Source 2 : Drain 3:C 4 : Gate Mini Type Package (4-pin) V VGS –4 V Drain current ID 45 mA Gate current IG 3 mA Allowable power dissipation PD 200 mW Channel temperature Tch 150 ˚C Storage temperature Tstg – 55 to +150 ˚C 0.4 –0.05 +0.1 +0.2 1.1 –0.1 ■ Absolute Maximum Ratings (Ta = 25˚C) 3 0.16 –0.06 With bandwidth control pin 1 0 to 0.1 ● 0.95 Low noise 1.9±0.2 ● 0.5R 4 0.95 General-use wide-band amplifier 2.9±0.2 ● ■ Equivalent Circuit 2 3 4 1 ■ Electrical Characteristics (Ta = 25˚C) Parameter IDD * 1 Noise figure NF * 2 Power gain PG * 2 IdB compression output PO * 2 *1 Condition Symbol Drain current VDS= 3V Min Typ Max 5 30 45 mA 2 3 dB VDS= 3V, f= 0.5GHz VDS= 3V, f=1.8GHz VDS= 3V, f= 0.5GHz VDS= 3V, f= 0.5GHz *2 Rank P Q R IDD(mA) 5 to 20 15 to 30 25 to 45 NF, PG, PO test circuit dB 9 8 VDS= 3V, f=1.8GHz IDD rank classification 10 5 VDS= 3V, f=1.8GHz Unit 15 dBm VD C = 1000 pF Cc = 200 pF C Cf = 27 pF Cc C Cf Cc G S GN1010 GaAs MMICs PG, NF – f | S21 |, | S12 | – f 30 PG 8 6 NF 4 2 0.3 1 Frequency 3 f 20 | S21 | 10 0 –10 | S12 | –20 –30 10 10 20 VDD=3V Ta=25˚C 30 100 300 VDD=3V Ta=25˚C 10 0 | S22 | –10 –20 | S11 | –30 –40 10 1000 3000 10000 30 Frequency f (MHz) (GHz) 100 300 1000 3000 10000 Frequency f NF, PG – f (MHz) Pout, IM2, IM3 – Pin 20 40 VDD=3V Cf=27pF VDD=3V Cf=27pF I.P 20 PG 10 2 NF 1 0 0 0.1 0.3 0.5 1.0 0 Pout, IM2, IM3 (dBm) 3 Power gain PG (dB) 0 0.1 Noise figure NF (dB) Power gain PG (dB) 10 Noise figure NF (dB) Forward transfer gain, Reverse transfer gain | S21 | , | S12 | (dB) VDD=3V Ta=25˚C Forward transfer gain, Reverse transfer gain | S11 | , | S22 | (dB) 12 | S11 |, | S22 | – f Pout –20 IM3 IM2 –40 2.0 Frequency f (GHz) –60 –90MHz –500MHz –1800MHz –80 –40 –20 0 Pin (dBm) 20